Surface Mount Schottky Barrier Rectifier LGE SD10S100SL with High Thermal Reliability and Ultra Loss
Key Attributes
Model Number:
SD10S100SL
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
300uA
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
100V
Voltage - Forward(Vf@If):
640mV@5A
Current - Rectified:
10A
Mfr. Part #:
SD10S100SL
Package:
TO-277B
Product Description
Product Overview
The SD10S100SL is a Surface Mount Schottky Barrier Rectifier designed for high efficiency and ultra-low power loss. It features patented Super Barrier Rectifier Technology, high forward surge capability, and excellent high-temperature stability. This rectifier is ideal for single-phase, half-wave applications with resistive or inductive loads, offering high thermal reliability and suitable for RoHS/Lead Free versions.
Product Attributes
- Brand: LGE Semiconductor (implied by URL)
- Origin: Not specified
- Material: Plastic material-UL flammability 94V-0
- Color: Not specified
- Certifications: RoHS/Lead Free (for specific versions)
- Features: High Thermal Reliability, Patented Super Barrier Rectifier Technology, High Forward Surge Capability, Ultra Low Power Loss, High Efficiency, Schottky Barrier Chip
- Mechanical Data: TO-277 package, molded plastic, cathode band polarity, plated leads solderable per MIL-STD-202, Method 208, mounting position: Any
Technical Specifications
| Parameter | Symbol | SD10S100SL | Unit | Notes |
| DC blocking voltage | VRRM | 100 | V | |
| Working Peak Reverse Voltage | VRWM | 100 | V | |
| Peak Repetitive Reverse Voltage | VRRM | 100 | V | |
| RMS Rectified Voltage | VR(RMS) | 70 | V | |
| Average Rectified Output Current | IF(AV) | 10.0 | A | 1 |
| Non-Repetitive Peak Forward Surge 8.3ms Single Half Sine-Wave Superimposed on rated load | IFSM | 150 | A | 2 |
| Rating for Fusing (t < 8.3ms) | I2t | 15 | A2s | |
| Forward Voltage Drop | VFM | 0.64 | V | @IF=5A, T =25 |
| Peak Reverse Current | IR | 0.3 | mA | @VR=100V, T =25 |
| Operating junction temperature range | TJ | -55 to +150 | ||
| Storage temperature range | TSTG | -55 to +150 | ||
| Typical Thermal Resistance Junction to Ambient | RJA | 100 | /W | Valid Provided that are kept at ambient temperature at a distance of 9.5mm from the case. |
| Typical Thermal Resistance Junction to Case | RJC | Not specified | /W | |
| Typical Thermal Resistance Lead to Ambient | RJL | Not specified | /W |
2410122007_LGE-SD10S100SL_C5122129.pdf
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