20 Volt N Channel MOSFET LGE G2302 Power Transistor Designed for Portable Electronics and Converters
Key Attributes
Model Number:
G2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V,3.6A
Gate Threshold Voltage (Vgs(th)):
650mV
Reverse Transfer Capacitance (Crss@Vds):
80pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
300pF@10V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
4nC@4.5V
Mfr. Part #:
G2302
Package:
SOT-23
Product Description
G2302 N-Channel 20-V (D-S) MOSFET
The G2302 is a TrenchFET Power MOSFET designed as a load switch for portable devices and DC/DC converters. It offers efficient power management for various electronic applications.
Product Attributes
- Brand: LGE Semiconductor
- Model: G2302
- Channel Type: N-Channel
- Marking: 2302
- Revision: 20180501-P1
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current | ID | Ta=25℃ | 2.1 | A | ||
| Continuous Source-Drain Current (Diode Conduction) | IS | 0.6 | A | |||
| Power Dissipation | PD | Ta=25℃ | 0.35 | W | ||
| Thermal Resistance from Junction to Ambient (t≤5s) | RΘJA | 357 | ℃/W | |||
| Operating Junction Temperature | TJ | 150 | ℃ | |||
| Storage Temperature | TSTG | -55 | +150 | ℃ | ||
| Electrical Characteristics (Ta=25℃ unless otherwise noted) | ||||||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =10µA | 20 | V | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =50µA | 0.65 | 0.95 | 1.2 | V |
| Gate-body leakage | IGSS | VDS =0V, VGS =±8V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =20V, VGS =0V | 1 | µA | ||
| Drain-source on-resistance | rDS(on) | VGS =4.5V, ID =3.6A | 0.045 | 0.060 | ℉ | |
| VGS =2.5V, ID =3.1A | 0.070 | 0.115 | ||||
| Forward transconductance | gfs | VDS =5V, ID =3.6A | 8 | S | ||
| Diode forward voltage | VSD | IS=0.94A,VGS=0V | 0.76 | 1.2 | V | |
| Dynamic Characteristics | ||||||
| Total gate charge | Qg | VDS =10V,VGS =4.5V,ID =3.6A | 4.0 | 10 | nC | |
| Gate-source charge | Qgs | 0.65 | ||||
| Gate-drain charge | Qg | 1.5 | ||||
| Input capacitance | Ciss | VDS =10V,VGS =0V,f=1MHz | 300 | pF | ||
| Output capacitance | Coss | 120 | ||||
| Reverse transfer capacitance | Crss | 80 | ||||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VDD=10V, RL=5.5℉, ID ≈3.6A, VGEN=4.5V,Rg=6℉ | 7 | 15 | ns | |
| Rise time | tr | 55 | 80 | |||
| Turn-off delay time | td(off) | 16 | 60 | |||
| Fall time | tf | 10 | 25 | |||
Notes:
a. Pulse Test: Pulse width≤300µs, duty cycle ≤2%.
b. These parameters have no way to verify.
- Applications: Load Switch for Portable Devices, DC/DC Converter
- Dimensions: SOT-23 package
- Contact: http://www.lgesemi.com, mail:lge@lgesemi.com
2410121746_LGE-G2302_C688913.pdf
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