Energy P Channel MOSFET LRC LBSS84LT1G suitable for DC DC converters and portable device power circuits
Key Attributes
Model Number:
LBSS84LT1G
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
10Ω@5V,100mA
Gate Threshold Voltage (Vgs(th)):
2V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 P-Channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
30pF
Pd - Power Dissipation:
225mW
Gate Charge(Qg):
6nC
Mfr. Part #:
LBSS84LT1G
Package:
SOT-23
Product Description
Product Overview
LESHAN RADIO COMPANY, LTD. presents the LBSS84LT1G and LBSS84LT3G P-Channel SOT-23 MOSFETs. These miniature surface-mount devices are engineered to reduce power loss and conserve energy, making them ideal for small power management circuitry. Typical applications include DC-DC converters, load switching, and power management in portable and battery-powered products such as computers, printers, cellular, and cordless telephones. The S-Prefix variants (S-LBSS84LT1G, S-LBSS84LT3G) are AEC-Q101 Qualified and PPAP Capable, suitable for automotive and other applications requiring unique site and control change requirements.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package: SOT-23
- Material Compliance: Pb-Free Package available, Halogen Free, RoHS compliant.
- Certifications: AEC-Q101 Qualified (S-Prefix variants)
Technical Specifications
| Model | Description | Value | Unit |
|---|---|---|---|
| LBSS84LT1G / LBSS84LT3G | Drain-to-Source Voltage (VDSS) | 50 | Vdc |
| Gate-to-Source Voltage Continuous (VGS) | ±20 | Vdc | |
| Drain Current Continuous @ TA = 25°C (ID) | 130 | mA | |
| Pulsed Drain Current (tp ≤ 10 µs) (IDM) | 520 | mA | |
| Total Power Dissipation @ TA = 25°C (PD) | 225 | mW | |
| Operating and Storage Temperature Range (TJ, Tstg) | -55 to 150 | °C | |
| Thermal Resistance Junction-to-Ambient (RθJA) | 556 | °C/W | |
| Maximum Lead Temperature for Soldering (TL) | 260 | °C | |
| Drain-to-Source Breakdown Voltage (V(BR)DSS) (VGS = 0 Vdc, ID = 250 µAdc) | 50 | Vdc | |
| Zero Gate Voltage Drain Current (IDSS) (VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C) | 15 | µAdc | |
| Gate-Body Leakage Current (IGSS) (VGS = ±20 Vdc, VDS = 0 Vdc) | ±10 | nAdc | |
| Gate-Source Threshold Voltage (VGS(th)) (VDS = VGS, ID = 250 µAdc) | 0.8 - 2.0 | Vdc | |
| Static Drain-to-Source On-Resistance (rDS(on)) (VGS = 5.0 Vdc, ID = 100 mAdc) | 5.0 - 10 | Ohms | |
| Transfer Admittance (|yfs|) (VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) | 50 | mS||
| Input Capacitance (Ciss) (VDS = 5.0 Vdc) | 30 | pF||
| Output Capacitance (Coss) (VDS = 5.0 Vdc) | 10 | pF||
| Transfer Capacitance (Crss) (VDG = 5.0 Vdc) | 5.0 | pF||
| Turn-On Delay Time (td(on)) | 2.5 | ns | |
| Rise Time (tr) | 1.0 | ns | |
| Turn-Off Delay Time (td(off)) | 16 | ns | |
| Fall Time (tf) | 8.0 | ns | |
| Gate Charge (QT) | 6000 | pC||
| Source-Drain Diode Continuous Current (IS) | 0.130 | A||
| Source-Drain Diode Pulsed Current (ISM) | 0.520 | A||
| Source-Drain Diode Forward Voltage (VSD) | 2.5 | V||
| Package Dimensions (SOT-23) | A | 2.80 - 3.04 | mm |
| B | 1.20 - 1.40 | mm | |
| C | 0.89 - 1.11 | mm | |
| D | 0.37 - 0.50 | mm | |
| G | 1.78 - 2.04 | mm | |
| H | 0.013 - 0.100 | mm | |
| J | 0.085 - 0.177 | mm | |
| K | 0.35 - 0.69 | mm | |
| L | 0.89 - 1.02 | mm | |
| S | 2.10 - 2.64 | mm | |
| V | 0.45 - 0.60 | mm | |
| Ordering Information | LBSS84LT1G | SOT-23 | 3000/Tape&Reel |
| LBSS84LT3G | SOT-23 | 10000/Tape&Reel | |
| S-LBSS84LT1G | SOT-23 | (Automotive Qualified) | |
| S-LBSS84LT3G | SOT-23 | (Automotive Qualified) |
2409302330_LRC-LBSS84LT1G_C8492.pdf
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