High reliability PNP silicon transistor LRC LMBT4403LT1G perfect for diverse electronic applications
Key Attributes
Model Number:
LMBT4403LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT4403LT1G
Package:
SOT-23
Product Description
LMBT4403LT1G General Purpose PNP Silicon Transistor
The LMBT4403LT1G is a general-purpose PNP silicon transistor from LESHAN RADIO COMPANY, LTD., designed for a wide range of electronic applications. It offers reliable performance with key electrical and thermal characteristics suitable for various circuit designs.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Device Marking: 2T
- Compliance: RoHS, AEC-Q101 Qualified, PPAP Capable
- Package: SOT-23 (TO-236AB)
- Available in Tape & Reel: 3000/Tape & Reel (LMBT4403LT1G), 10000/Tape & Reel (S-LMBT4403LT3)
- Automotive and Other Applications Prefix: S-
Technical Specifications
| Characteristic | Symbol | Min | Max | Unit | Conditions |
| Maximum Ratings | |||||
| CollectorEmitter Voltage | V CEO | 40 | Vdc | ||
| CollectorBase Voltage | V CBO | 40 | Vdc | ||
| EmitterBase Voltage | V EBO | 5.0 | Vdc | ||
| Collector Current Continuous | I C | 600 | mAdc | ||
| Total Device Dissipation (FR5 Board) | P D | 225 | mW | T A =25 C; Derate above 25C 1.8 mW/C | |
| Total Device Dissipation (Alumina Substrate) | P D | 300 | mW | T A = 25C; Derate above 25C 2.4 mW/C | |
| Thermal Resistance Junction to Ambient (FR5 Board) | R JA | 556 | C/W | ||
| Thermal Resistance Junction to Ambient (Alumina Substrate) | R JA | 417 | C/W | ||
| Junction and Storage Temperature | T J , T stg | 55 | +150 | C | |
| OFF Characteristics | |||||
| CollectorEmitter Breakdown Voltage | V (BR)CEO | 40 | Vdc | (I C = 1.0 mAdc, I B = 0) | |
| CollectorBase Breakdown Voltage | V (BR)CBO | 40 | Vdc | (I C = 0.1mAdc, I E = 0) | |
| EmitterBase Breakdown Voltage | V (BR)EBO | 5.0 | Vdc | (I E = 0.1mAdc, I C = 0) | |
| Base Cutoff Current | I BEV | 0.1 | Adc | (V CE = 35 Vdc, V EB = 0.4 Vdc) | |
| Collector Cutoff Current | I CEX | 0.1 | Adc | (V CE = 35 Vdc, V EB = 0.4 Vdc) | |
| ON Characteristics | |||||
| DC Current Gain | hFE | 30 | (I C = 0.1 mAdc, V CE = 1.0 Vdc) | ||
| DC Current Gain | hFE | 60 | (I C = 1.0 mAdc, V CE = 1.0 Vdc) | ||
| DC Current Gain | hFE | 100 | (I C = 10 mAdc, V CE = 1.0 Vdc) | ||
| DC Current Gain | hFE | 100 | 300 | (I C = 150 mAdc, V CE = 2.0 Vdc) | |
| DC Current Gain | hFE | 20 | (I C = 500 mAdc, V CE = 2.0 Vdc) | ||
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.4 | Vdc | (I C = 150mAdc, I B = 15 mAdc) | |
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.75 | Vdc | (I C = 500 mAdc, I B = 50 mAdc) | |
| BaseEmitter Saturation Voltage | V BE(sat) | 0.75 | 0.95 | Vdc | (I C = 150 mAdc, I B = 15 mAdc) |
| BaseEmitter Saturation Voltage | V BE(sat) | 1.3 | Vdc | (I C = 500 mAdc, I B = 50 mAdc) | |
| SmallSignal Characteristics | |||||
| CurrentGain Bandwidth Product | f T | 200 | MHz | (I C = 20mAdc, V CE= 10 Vdc, f = 100 MHz) | |
| CollectorBase Capacitance | C cb | 8.5 | pF | (V CB= 10 Vdc, I E = 0, f = 1.0 MHz) | |
| EmitterBase Capacitance | C eb | 30 | pF | (V BE = 0.5 Vdc, I C = 0, f = 1.0 MHz) | |
| Input Impedance | h ie | 1.5 | 15 | k | (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) |
| Voltage Feedback Ratio | h re | 0.1 | 8.0 | X 10 4 | (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) |
| SmallSignal Current Gain | h fe | 60 | 500 | (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) | |
| Output Admittance | h oe | 1.0 | 100 | mhos | (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) |
| Switching Characteristics | |||||
| Delay Time | t d | 15 | ns | (V CC = 30 Vdc, V EB = 2.0 Vdc, I C = 150mAdc, I B1 = 15 mAdc) | |
| Rise Time | t r | 20 | ns | (V CC = 30 Vdc, I C = 150 mAdc, I B1 = I B2 = 15 mAdc) | |
| Storage Time | t s | 225 | ns | ||
| Fall Time | t f | 30 | ns | ||
1810051110_LRC-LMBT4403LT1G_C78592.pdf
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