Low RDSon 12V P Channel Enhancement MOSFET LRC LP3218DT1G in Compact DFN 2x2x0.62 Millimeter Package
Key Attributes
Model Number:
LP3218DT1G
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
8.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@4.5V,7A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
210pF
Number:
1 P-Channel
Output Capacitance(Coss):
240pF
Input Capacitance(Ciss):
2.24nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
28nC@4.5V
Mfr. Part #:
LP3218DT1G
Package:
DFN2020-6S
Product Description
Product Overview
The LP3218DT1G is a 12V P-Channel Enhancement MOSFET designed for space-saving applications. It features an ultra-low RDS(on) and a low-profile DFN 2.0x2.0x0.62 mm package. This device is suitable for applications such as battery switches and high-side load switches. It is a Pb-Free and Halogen-Free device, compliant with RoHS requirements.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Device Type: P-Channel Enhancement MOSFET
- Voltage Rating: 12V
- Package Type: DFN 2.0x2.0x0.62 mm
- Certifications: Pb-Free, Halogen Free, RoHS compliant
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| DraintoSource Breakdown Voltage | V(BR)DSS | VGS = 0 V, ID = 250 A | -12 | V | ||
| DraintoSource Breakdown Voltage Temperature Coefficient | V(BR)DSS /TJ | -10 | mV/C | |||
| Zero Gate Voltage Drain Current | IDSS | VGS = 0 V, VDS = -20 V | -2.0E-05 | A | ||
| GatetoSource Leakage Current | IGSS | VDS = 0 V, VGS = 5 V | 5 | A | ||
| Gate Threshold Voltage | VGS(TH) | VGS = V DS , ID = 250 A | -0.4 | V | ||
| Negative Threshold Temperature Coefficient | VGS(TH) /TJ | -3.0 | mV/C | |||
| DraintoSource On Resistance | RDS(on) | VGS = -4.5 V, ID = -7 A | 14.6 | 18 | m | |
| DraintoSource On Resistance | RDS(on) | VGS = -2.5 V, ID = -5 A | 19 | 25 | m | |
| DraintoSource On Resistance | RDS(on) | VGS = -1.8 V, ID = -3 A | 25 | 50 | m | |
| DraintoSource On Resistance | RDS(on) | VGS = -1.5 V, ID = -1 A | 40 | 90 | m | |
| Forward Transconductance | gFS | VDS = -5 V, ID = -3A | 40 | S | ||
| Input Capacitance | CISS | VGS = 0 V, f = 1 MHz, VDS = -15 V | 2240 | pF | ||
| Output Capacitance | COSS | VGS = 0 V, f = 1 MHz, VDS = -15 V | 240 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS = 0 V, f = 1 MHz, VDS = -15 V | 210 | pF | ||
| Total Gate Charge | QG(TOT) | VGS = -4.5 V, VDS = -15 V; ID = -4A | 28 | nC | ||
| Threshold Gate Charge | QG(TH) | VGS = -4.5 V, VDS = -15 V; ID = -4A | 1.0 | nC | ||
| GatetoSource Charge | QGS | VGS = -4.5 V, VDS = -15 V; ID = -4A | 2.9 | nC | ||
| GatetoDrain Charge | QGD | VGS = -4.5 V, VDS = -15 V; ID = -4A | 8.8 | nC | ||
| Rise Time | tr | VGS = -4.5 V, VDS = -15 V; ID = -4A | 15 | ns | ||
| TurnOn Delay Time | td(ON) | VGS = -4.5 V, VDS = -15 V; ID = -4A | 8.6 | ns | ||
| TurnOff Delay Time | td(OFF) | VGS = -4.5 V, VDS = -15 V; ID = -4A | 150 | ns | ||
| Fall Time | tf | VGS = -4.5 V, VDS = -15 V; ID = -4A | 88 | ns | ||
| Forward Diode Voltage | VSD | VGS = 0 V, IS = -1A | 0.5 | 0.63 | V | |
| DraintoSource Voltage | VDSS | -12 | V | |||
| GatetoSource Voltage | VGS | 8 | V | |||
| Drain Current (Steady State) | ID | Note 1 | -8.2 | A | ||
| Pulsed Drain Current | IDM | tp = 10 s | -25 | A | ||
| Power Dissipation (Operating Junction and Storage) | PD | Note 1 | 1.7 | W | ||
| Junction Temperature, Storage Temperature Range | TJ , TSTG | -55 | +150 | C | ||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10 s, t < 7 s) | 260 | C | ||
| ESD Rating (HBM, Method 3015) | ESD | 2000 | V |
Note 1: Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
Note 2: Pulse Test: pulse width 300 s, duty cycle 2%
Note 3: Switching characteristics are independent of operating junction temperatures
Dimensions (DFN2020-6S)
| Dim | MIN | NOM | MAX |
|---|---|---|---|
| A | 0.60 | 0.65 | 0.70 |
| A1 | 0.01 | 0.03 | 0.05 |
| b | 0.25 | 0.30 | 0.35 |
| D | 1.95 | 2.00 | 2.05 |
| E | 1.95 | 2.00 | 2.05 |
| e | 0.65 TYP. | ||
| L | 0.23 | 0.28 | 0.33 |
| A3 | 0.152 REF |
All Dimensions in mm
Soldering Footprint (DFN2020-6S)
| Dim | X | X1 | X2 | Y | Y1 | Y2 | Y3 | Y4 |
|---|---|---|---|---|---|---|---|---|
| (mm) | 0.40 | 0.95 | 1.70 | 0.43 | 0.75 | 1.15 | 1.54 | 2.39 |
Ordering Information
| Model Number | Device Marking | Shipping |
|---|---|---|
| LP3218DT1G | LP3218DT1G | 3000/Tape&Reel |
2410122030_LRC-LP3218DT1G_C172437.pdf
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