Compact Surface Mount 20V P Channel MOSFET LRC LP2301ELT1G with ESD Protection and Trench Technology

Key Attributes
Model Number: LP2301ELT1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
110mΩ@4.5V,2.8A
Gate Threshold Voltage (Vgs(th)):
900mV
Reverse Transfer Capacitance (Crss@Vds):
17pF@6V
Number:
1 P-Channel
Pd - Power Dissipation:
900mW
Input Capacitance(Ciss):
520pF@6V
Gate Charge(Qg):
3.5nC@4.5V
Mfr. Part #:
LP2301ELT1G
Package:
SOT-23
Product Description

Product Overview

The LP2301ELT1G and S-LP2301ELT1G are 20V P-Channel Enhancement-Mode MOSFETs designed for various applications. These devices feature advanced trench process technology and a high-density cell design for ultra-low on-resistance. They offer simple drive requirements, a small package outline, and are surface mount devices. The S-prefix variants are specifically designed for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable. These MOSFETs are ESD protected, with ESD > 1kV HBM.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Product Series: LP2301ELT1G, S-LP2301ELT1G
  • Technology: Advanced trench process, High density cell design
  • Material Compliance: RoHS requirements and Halogen Free
  • Certifications: AEC-Q101 qualified (S-prefix), PPAP capable (S-prefix)
  • ESD Protection: > 1kV HBM
  • Package Type: SOT23 (TO-236)

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Notes
General Features
Drain-Source Voltage VDSS -20 V
Static Drain-Source On-State Resistance RDS(on) 156 m VGS@-2.5V, IDS@-2.0A
Static Drain-Source On-State Resistance RDS(on) 110 m VGS@-4.5V, IDS@-2.8A
Drain Current - Continuous ID -2.8 A
Gate-Source Voltage - Continuous VGS 8 V
Pulsed Drain Current IDM -11 A Pulse width limited by the Maximum junction temperature.
Maximum Ratings
Maximum Power Dissipation PD 0.9 W Ta = 25C
Thermal Resistance, Junction-to-Ambient RJA 140 C/W 1-in 2oz Cu PCB board.
Junction and Storage Temperature TJ, Tstg -55 +150 C
Electrical Characteristics (Ta= 25C unless otherwise noted)
Drain-Source Breakdown Voltage VBRDSS -20 V VGS = 0, ID = -250A
Zero Gate Voltage Drain Current IDSS -1 -0.9 A VGS = 0, VDS = -9.6 V
Gate-Body Leakage Current, Forward IGSS 10 A VGS = 8 V
Gate Threshold Voltage VGS(th) -0.65 -0.9 -1.2 V VDS = VGS, ID = -250A
Input Capacitance Ciss 1350 pF VGS = 0 V, f = 1.0MHz, VDS = -6 V
Output Capacitance Coss 5500 pF VGS = 0 V, f = 1.0MHz, VDS = -6 V
Reverse Transfer Capacitance Crss 520 pF VGS = 0 V, f = 1.0MHz, VDS = -6 V
Turn-On Delay Time td(on) 17 ns VDD = -6V, RL = 6, ID = 1, VGEN = -4.5V, RG = 6
Rise Time tr ns
Turn-Off Delay Time td(off) ns
Fall Time tf ns
Forward Voltage VSD -0.8 -1.2 V VGS = 0 V, ISD = -0.75 A
Dynamic Characteristics
Total Gate Charge Qg(-10V) 7.8 nC VDS = -10V, VGS = -10V, ID = -1.6A
Total Gate Charge Qg(-4.5V) 3.5 nC
Gate-Source Charge Qgs 1.2 nC
Gate-Drain Charge Qgd 0.5 nC
Device Marking and Ordering Information
Model Marking Shipping
LP2301ELT1G LP2301ELT1G 3000/Tape&Reel
S-LP2301ELT1G S-LP2301ELT1G 3000/Tape&Reel
LP2301ELT3G LP2301ELT3G 10000/Tape&Reel
Outline and Dimensions (SOT23 / TO-236)
Dimension Symbol Min. (mm) Nom. (mm) Max. (mm) Min. (inch) Nom. (inch) Max. (inch)
A A 0.89 1.11 1.30 0.035 0.044 0.051
A1 A1 0.00 0.05 0.10 0.000 0.002 0.004
b b 0.37 0.44 0.50 0.015 0.017 0.020
c c 0.09 0.11 0.13 0.004 0.004 0.005
D D 2.80 2.90 3.04 0.110 0.114 0.120
E E 2.60 2.80 3.00 0.102 0.110 0.118
e e 1.90 0.075
HE HE 2.10 2.40 2.70 0.083 0.094 0.106
L L 0.40 0.50 0.60 0.016 0.020 0.024
L1 L1 0.10 0.20 0.30 0.004 0.008 0.012
0 10 0 10

2212131830_LRC-LP2301ELT1G_C5273664.pdf

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