Compact Surface Mount 20V P Channel MOSFET LRC LP2301ELT1G with ESD Protection and Trench Technology
Product Overview
The LP2301ELT1G and S-LP2301ELT1G are 20V P-Channel Enhancement-Mode MOSFETs designed for various applications. These devices feature advanced trench process technology and a high-density cell design for ultra-low on-resistance. They offer simple drive requirements, a small package outline, and are surface mount devices. The S-prefix variants are specifically designed for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable. These MOSFETs are ESD protected, with ESD > 1kV HBM.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Product Series: LP2301ELT1G, S-LP2301ELT1G
- Technology: Advanced trench process, High density cell design
- Material Compliance: RoHS requirements and Halogen Free
- Certifications: AEC-Q101 qualified (S-prefix), PPAP capable (S-prefix)
- ESD Protection: > 1kV HBM
- Package Type: SOT23 (TO-236)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes | |
|---|---|---|---|---|---|---|---|
| General Features | |||||||
| Drain-Source Voltage | VDSS | -20 | V | ||||
| Static Drain-Source On-State Resistance | RDS(on) | 156 | m | VGS@-2.5V, IDS@-2.0A | |||
| Static Drain-Source On-State Resistance | RDS(on) | 110 | m | VGS@-4.5V, IDS@-2.8A | |||
| Drain Current - Continuous | ID | -2.8 | A | ||||
| Gate-Source Voltage - Continuous | VGS | 8 | V | ||||
| Pulsed Drain Current | IDM | -11 | A | Pulse width limited by the Maximum junction temperature. | |||
| Maximum Ratings | |||||||
| Maximum Power Dissipation | PD | 0.9 | W | Ta = 25C | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 140 | C/W | 1-in 2oz Cu PCB board. | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | +150 | C | |||
| Electrical Characteristics (Ta= 25C unless otherwise noted) | |||||||
| Drain-Source Breakdown Voltage | VBRDSS | -20 | V | VGS = 0, ID = -250A | |||
| Zero Gate Voltage Drain Current | IDSS | -1 | -0.9 | A | VGS = 0, VDS = -9.6 V | ||
| Gate-Body Leakage Current, Forward | IGSS | 10 | A | VGS = 8 V | |||
| Gate Threshold Voltage | VGS(th) | -0.65 | -0.9 | -1.2 | V | VDS = VGS, ID = -250A | |
| Input Capacitance | Ciss | 1350 | pF | VGS = 0 V, f = 1.0MHz, VDS = -6 V | |||
| Output Capacitance | Coss | 5500 | pF | VGS = 0 V, f = 1.0MHz, VDS = -6 V | |||
| Reverse Transfer Capacitance | Crss | 520 | pF | VGS = 0 V, f = 1.0MHz, VDS = -6 V | |||
| Turn-On Delay Time | td(on) | 17 | ns | VDD = -6V, RL = 6, ID = 1, VGEN = -4.5V, RG = 6 | |||
| Rise Time | tr | ns | |||||
| Turn-Off Delay Time | td(off) | ns | |||||
| Fall Time | tf | ns | |||||
| Forward Voltage | VSD | -0.8 | -1.2 | V | VGS = 0 V, ISD = -0.75 A | ||
| Dynamic Characteristics | |||||||
| Total Gate Charge | Qg(-10V) | 7.8 | nC | VDS = -10V, VGS = -10V, ID = -1.6A | |||
| Total Gate Charge | Qg(-4.5V) | 3.5 | nC | ||||
| Gate-Source Charge | Qgs | 1.2 | nC | ||||
| Gate-Drain Charge | Qgd | 0.5 | nC | ||||
| Device Marking and Ordering Information | |||||||
| Model | Marking | Shipping | |||||
| LP2301ELT1G | LP2301ELT1G | 3000/Tape&Reel | |||||
| S-LP2301ELT1G | S-LP2301ELT1G | 3000/Tape&Reel | |||||
| LP2301ELT3G | LP2301ELT3G | 10000/Tape&Reel | |||||
| Outline and Dimensions (SOT23 / TO-236) | |||||||
| Dimension | Symbol | Min. (mm) | Nom. (mm) | Max. (mm) | Min. (inch) | Nom. (inch) | Max. (inch) |
| A | A | 0.89 | 1.11 | 1.30 | 0.035 | 0.044 | 0.051 |
| A1 | A1 | 0.00 | 0.05 | 0.10 | 0.000 | 0.002 | 0.004 |
| b | b | 0.37 | 0.44 | 0.50 | 0.015 | 0.017 | 0.020 |
| c | c | 0.09 | 0.11 | 0.13 | 0.004 | 0.004 | 0.005 |
| D | D | 2.80 | 2.90 | 3.04 | 0.110 | 0.114 | 0.120 |
| E | E | 2.60 | 2.80 | 3.00 | 0.102 | 0.110 | 0.118 |
| e | e | 1.90 | 0.075 | ||||
| HE | HE | 2.10 | 2.40 | 2.70 | 0.083 | 0.094 | 0.106 |
| L | L | 0.40 | 0.50 | 0.60 | 0.016 | 0.020 | 0.024 |
| L1 | L1 | 0.10 | 0.20 | 0.30 | 0.004 | 0.008 | 0.012 |
| 0 | 10 | 0 | 10 | ||||
2212131830_LRC-LP2301ELT1G_C5273664.pdf
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