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quality Littelfuse IXYS DHG10I1800PA diode featuring very low leakage current for performance in UPS systems factory
quality Littelfuse IXYS DHG10I1800PA diode featuring very low leakage current for performance in UPS systems factory

Littelfuse IXYS DHG10I1800PA diode featuring very low leakage current for performance in UPS systems

Key Attributes
Model Number: DHG10I1800PA
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
60A
Reverse Leakage Current (Ir):
50uA@1800V
Reverse Recovery Time (trr):
300ns
Diode Configuration:
1 Independent
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
1.8kV
Pd - Power Dissipation:
85W
Voltage - Forward(Vf@If):
2.23V@10A
Current - Rectified:
10A
Mfr. Part #:
DHG10I1800PA
Package:
TO-220AC
Product Description

Product Overview

The DHG10I1800PA is a high-performance, fast recovery diode designed for demanding applications. It features planar passivated chips, very low leakage current, and a very short recovery time, contributing to improved thermal behavior and reduced power dissipation. Its soft reverse recovery characteristic minimizes EMI/RFI, making it suitable as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and free-wheeling diode in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Part Number: DHG10I1800PA
  • Diode Type: Sonic Fast Recovery Diode, Single Diode, Fast Diode
  • Package: TO-220
  • Certifications: RoHS compliant, Epoxy meets UL 94V-0
  • Product Marking: DHG10I1800PA

Technical Specifications

Symbol Definition Conditions Unit Typ. Max. Min.
VRRM max. repetitive reverse blocking voltage TVJ = 25C V 1800
VRMS RMS current per terminal A 35
IF(AV) average forward current TC = 25C A 10
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; TVJ = 45C A 60
VF forward voltage drop IF = 10 A, TVJ = 25C V 1.40
VF forward voltage drop IF = 20 A, TVJ = 25C V 1.50
VF0 threshold voltage TVJ = 25C V 2.27
rF slope resistance for power loss calculation only IF = 10 A, TVJ = 25C m 101
IR reverse current, drain current VR = 1800 V, TVJ = 25C A 150
IR reverse current, drain current VR = 1800 V, TVJ = 150C mA 0.4
CJ junction capacitance VR = 900 V, f = 1 MHz, TVJ = 25C pF 110
Ptot total power dissipation TC = 25C W 85
RthJC thermal resistance junction to case K/W 1.5
RthCH thermal resistance case to heatsink K/W 10
TVJ virtual junction temperature C 175 -55
Tstg storage temperature C 150 -55
VF0 threshold voltage V 1.4
R0max slope resistance * on die level m 0.385
VRSM max. non-repetitive reverse blocking voltage TVJ = 25C V 50
trr reverse recovery time IF = 1 A; VR = 900 V; -diF/dt = 350 A/s; TVJ = 150C ns 260
IRM max. reverse recovery current IF = 10 A; VR = 900 V; -diF/dt = 350 A/s; TVJ = 150C A 17.5
Qrr reverse recovery charge IF = 10 A; VR = 900 V; -diF/dt = 350 A/s; TVJ = 150C C 350
Erec recovery energy IF = 10 A; VR = 900 V; -diF/dt = 350 A/s; TVJ = 150C mJ 2.94

Dimensions (TO-220):

Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 5.08 BSC 0.200 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
P 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125

Mounting Torque: 0.6 Nm

Mounting Force (with clip): 60 N

Weight: 2 g


2504101957_Littelfuse-IXYS-DHG10I1800PA_C17429613.pdf

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