LRC L2N7002KN3T5G OP N Channel Small Signal MOSFET with RoHS Compliance and Halogen Free Material
Key Attributes
Model Number:
L2N7002KN3T5G-OP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
380mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.3Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
2.9pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
32.8pF
Pd - Power Dissipation:
250mW
Gate Charge(Qg):
700pC
Mfr. Part #:
L2N7002KN3T5G-OP
Package:
SOT-883-3
Product Description
Product Overview
The L2N7002KN3T5G and S-L2N7002KN3T5G are N-Channel Small Signal MOSFETs designed for various electronic applications. These devices are RoHS compliant and Halogen Free, with the 'S-' prefix variant offering AEC-Q101 qualification and PPAP capability for automotive and other demanding applications requiring unique site and control change requirements. They feature low RDS(on) and ESD protection, making them suitable for use as low-side load switches, level shift circuits, DC-DC converters, and in portable devices such as DSCs, PDAs, and cell phones.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS and Halogen Free
- Qualification: AEC-Q101 qualified (S- prefix variants)
- Capability: PPAP capable (S- prefix variants)
- Package: SOT-883
- Technology: N-Channel Small Signal MOSFET
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
|---|---|---|---|---|
| DrainSource Voltage | VDSS | 60 | V | |
| GateSource Voltage | VGS | 20 | V | |
| Drain Current (Steady State, TA = 25C) | ID | 380 | mA | |
| Pulsed Drain Current (tp=10s, TA = 25C) | IDM | 1.5 | A | |
| Source Current (Body Diode) | IS | 300 | mA | |
| Power Dissipation (Steady State) | PD | 500 | mW | Surface-mounted on FR4 board using 1 in sq pad size |
| JunctiontoAmbient (Steady State) | RJA | 260 | C/W | Surface-mounted on FR4 board using 1 in sq pad size |
| Junction and Storage Temperature | TJ, Tstg | -55 ~ +150 | C | |
| Lead Temperature for Soldering Purposes (1/8 " from case for 10 s) | TL | 260 | C | |
| GateSource ESD Rating (HBM, Method 3015) | ESD | 2000 | V | |
| DrainSource Breakdown Voltage | VBRDSS | 60 | V | (VGS = 0, ID = 250A) |
| Zero Gate Voltage Drain Current | IDSS | 80 | nA | (VGS = 0, VDS = 60 V, TJ = 25C) |
| GatetoSource Leakage Current | IGSS | 10 | A | (VDS = 0 V, VGS = 20 V) |
| Gate Threshold Voltage | VGS(th) | 1.0 | V | (VDS = VGS, ID = 250A) |
| DrainSource OnState Resistance | RDS(on) | 2.3 - 2.7 | (VGS = 10 V, ID = 500 mA) | |
| DrainSource OnState Resistance | RDS(on) | 5.0 | (VGS = 5.0 V, ID = 50 mA) | |
| Forward Transconductance | gfs | 39.4 | mS | (VDS = 5.0 V, ID = 200 mA) |
| Input Capacitance | Ciss | 5.4 | pF | (VGS = 0 V, f = 1 MHz, VDS = 25 V) |
| Output Capacitance | Coss | 2.9 | pF | (VGS = 0 V, f = 1 MHz, VDS = 25 V) |
| Reverse Transfer Capacitance | Crss | 1.4 | pF | (VGS = 0 V, f = 1 MHz, VDS = 25 V) |
| Total Gate Charge | QG(TOT) | 0.7 | nC | (VGS = 10 V, VDD = 10 V, ID = 500 mA) |
| Diode Forward OnVoltage | VSD | 0.7 | V | (IS = 115 mA, VGS = 0 V, TJ = 25C) |
| Device Marking | Marking | L2N7002KN3T5G, S-L2N7002KN3T5G | ||
| Ordering Information | Shipping | 10000/Tape&Reel |
| OUTLINE AND DIMENSIONS (SOT883) | |||
|---|---|---|---|
| DIM | MIN | TYP | MAX |
| A | 0.43 | 0.48 | 0.53 |
| A1 | 0 | - | 0.05 |
| D | 0.95 | 1.00 | 1.05 |
| E | 0.55 | 0.60 | 0.65 |
| e | - | 0.64 | - |
| e1 | - | 0.34 | - |
| L | 0.19 | 0.24 | 0.29 |
| L1 | 0.22 | 0.27 | 0.32 |
| b | 0.10 | 0.15 | 0.20 |
| b1 | 0.44 | 0.49 | 0.54 |
| c | 0.70 | 1.10 | |
| SOLDERING FOOTPRINT (SOT883) | ||
|---|---|---|
| Dimensions (mm) | X1 | Y |
| 0.40 | 0.20 | |
| X2 | Y1 | |
| 0.40 | 0.55 | |
2409300133_LRC-L2N7002KN3T5G-OP_C883197.pdf
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