Compact SOT 23 Package N Channel Power MOSFET LRC LN4501LT1G with Fast Switching and Low Gate Charge

Key Attributes
Model Number: LN4501LT1G
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
105mΩ@4.5V,3.6A
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 N-channel
Output Capacitance(Coss):
80pF
Input Capacitance(Ciss):
200pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
6nC@4.5V
Mfr. Part #:
LN4501LT1G
Package:
SOT-23
Product Description

Product Overview

The LN4501LT1G is a N-Channel Power MOSFET designed for load and power switching applications in portable and computing devices. It features leading planar technology for low gate charge and fast switching, a 2.5 V rating for low voltage gate drive, and a SOT-23 surface mount package for a small footprint. This device is compliant with RoHS requirements and Halogen Free.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material Compliance: RoHS requirements and Halogen Free
  • Package: SOT-23 (TO-236AB)

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Conditions
Drain-to-Source Breakdown Voltage V(BR)DSS 20 24.5 V VGS = 0 V, ID = 250 A
Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 22 mV/C
Zero Gate Voltage Drain Current IDSS 1.5 A VGS = 0 V,VDS = 16 V, TJ = 25C
Zero Gate Voltage Drain Current IDSS 10 A VGS = 0 V,VDS = 16 V, TJ = 85C
Gate-to-Source Leakage Current IGSS 100 nA VDS = 0 V, VGS = 12V
Gate Threshold Voltage VGS(TH) 0.6 1.2 V VGS = VDS, ID = 250 A
Gate Threshold Voltage Temperature Coefficient VGS(TH)/TJ 2.3 mV/C
DraintoSource On Resistance RDS(on) 70 80 m VGS = 4.5 V, ID = 3.6 A
DraintoSource On Resistance RDS(on) 85 105 m VGS = 2.5 V, ID = 3.1 A
Forward Transconductance gFS 9 S VDS = 5.0 V, ID = 3.6 A
Input Capacitance Ciss 200 pF VGS = 0 V, VDS = 10 V, f = 1.0 MHz
Output Capacitance Coss 80 pF VGS = 0 V, VDS = 10 V, f = 1.0 MHz
Reverse Transfer Capacitance Crss 50 pF VGS = 0 V, VDS = 10 V, f = 1.0 MHz
Total Gate Charge QG(TOT) 2.4 6 nC VGS = 4.5 V,VDS = 10V, ID = 3.6 A, RG = 6.0
Gate-to-Source Gate Charge QGS 0.5 nC VGS = 4.5 V,VDS = 10V, ID = 3.6 A, RG = 6.0
Gate-to-Drain Charge QGD 0.6 nC VGS = 4.5 V,VDS = 10V, ID = 3.6 A, RG = 6.0
Turn-On Delay Time td(on) 6.5 ns VGS = 4.5 V, VDS = 10V, ID = 3.6 A
Rise Time tr 12 ns VGS = 4.5 V, VDS = 10V, ID = 3.6 A
Turn-Off Delay Time td(off) 12 ns VGS = 4.5 V, VDS = 10V, ID = 3.6 A
Fall Time tf 3 ns VGS = 4.5 V, VDS = 10V, ID = 3.6 A
Forward Diode Voltage VSD 0.8 1.2 V VGS = 0 V, ISD = 1.6 A
Reverse Recovery Time tRR 7.1 ns VGS = 0 V, dIS/dt = 100A/s
Charge Time ta 5 ns IS = 1.6 A
Discharge Time tb 1.9 ns IS = 1.6 A
Reverse Recovery Charge QRR 3 nC IS = 1.6 A
Continuous Drain Current ID 3.2 A Steady State (Note 1)
Pulsed Drain Current IDM 20 A (tp = 10 s)
Continuous Source Current IS 10 A (Body Diode)
DraintoSource Voltage VDSS 20 V
GatetoSource Voltage VGS 12 V
Steady State Power Dissipation PD 2.4 W (Note 1)
Steady State Power Dissipation PD 1.25 W (Note 2)
JunctiontoAmbient RJA 100 C/W (Note 1)
JunctiontoAmbient RJA 300 C/W (Note 2)
Operating and Storage Temperature Range TJ, Tstg 55 +150 C
Maximum Temperature for Soldering Purposes TL 260 C (1/8 from case for 10 s)

Device Marking and Ordering Information:

  • LN4501LT1G (N45) - 3000/Tape&Reel
  • LN4501LT3G (N45) - 10000/Tape&Reel

Package Dimensions (SOT-23):

DIM MIN MAX MIN MAX
INCHES MILLIMETERS
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60

2410122030_LRC-LN4501LT1G_C176902.pdf

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