RoHS compliant power MOSFET LRC LN2302LT1G featuring 20V drain to source voltage and low on resistance for power
Key Attributes
Model Number:
LN2302LT1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
RDS(on):
60mΩ@4.5V,2.8A
Gate Threshold Voltage (Vgs(th)):
1.2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
57pF
Number:
1 N-channel
Input Capacitance(Ciss):
427.12pF
Output Capacitance(Coss):
80.56pF
Pd - Power Dissipation:
900mW
Gate Charge(Qg):
3.69nC@4.5V
Mfr. Part #:
LN2302LT1G
Package:
SOT-23
Product Description
Product Overview
The LN2302LT1G is a 20V N-Channel Enhancement-Mode MOSFET designed for high-density cell applications, offering ultra-low on-resistance and improved shoot-through Figure of Merit (FOM). This device is compliant with RoHS requirements and is Halogen-Free. Key features include a Drain-to-Source Voltage (VDS) of 20V and low on-resistance values such as 60m at Vgs@4.5V, Ids@2.8A, and 115m at Vgs@2.5V, Ids@2.0A. It is suitable for applications requiring efficient power management.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material Compliance: RoHS, Halogen Free
- Package Type: SOT 23 (TO236AB)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS = 0 V, ID = 250 A | ||
| Gate Threshold Voltage | VGS(TH) | 0.6 | 0.95 | 1.2 | V | VGS = VDS, ID = 250 A |
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS=9.6V, VGS=0V | ||
| Gate-to-Source Leakage Current | IGSS | 100 | nA | VDS = 0 V, VGS = 8 V | ||
| Drain-to-Source On Resistance | RDS(on) | 40 | 60 | m | VGS = 4.5 V, ID =2.8 A | |
| Drain-to-Source On Resistance | RDS(on) | 50 | 115 | m | VGS = 2.5 V, ID = 2 A | |
| Forward Diode Voltage | VSD | 1.2 | V | VGS = 0 V, ISD = -1.6A | ||
| Forward Transconductance | gFS | 6.5 | S | VDS = 5.0 V, ID = 4 A | ||
| Input Capacitance | Ciss | 427.12 | pF | VGS = 0 V, f = 1.0 MHz, VDS= 6 V | ||
| Output Capacitance | Coss | 80.56 | pF | VGS = 0 V, f = 1.0 MHz, VDS= 6 V | ||
| Reverse Transfer Capacitance | Crss | 57.00 | pF | VGS = 0 V, f = 1.0 MHz, VDS= 6 V | ||
| Total Gate Charge | QG | 3.69 | nC | VGS =4.5 V,VDS = 6 V, ID = 2.8 A | ||
| Gate-to-Source Gate Charge | QGS | 0.70 | nC | VGS =4.5 V,VDS = 6 V, ID = 2.8 A | ||
| Gate-to-Drain Charge | QGD | 1.06 | nC | VGS =4.5 V,VDS = 6 V, ID = 2.8 A | ||
| Turn-On Delay Time | td(on) | 6.16 | ns | VDD = 6V, RL = 6 , ID = 1, VGEN = 4.5V, RG = 6 | ||
| Rise Time | tr | 7.56 | ns | VDD = 6V, RL = 6 , ID = 1, VGEN = 4.5V, RG = 6 | ||
| Turn-Off Delay Time | td(off) | 16.61 | ns | VDD = 6V, RL = 6 , ID = 1, VGEN = 4.5V, RG = 6 | ||
| Fall Time | tf | 4.07 | ns | VDD = 6V, RL = 6 , ID = 1, VGEN = 4.5V, RG = 6 | ||
| Drain-to-Source Voltage | VDSS | 20 | V | |||
| Gate-to-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current | ID | 2.3 | A | TA = 25C | ||
| Pulsed Drain Current | IDM | 8 | A | Repetitive Rating: Pulse width limited by the Maximum junction temperation | ||
| Maximum Power Dissipation | PD | 0.9 | W | TA = 25C, 1-in, 2oz Cu PCB board | ||
| Maximum Power Dissipation | PD | 0.57 | W | TA = 75C, 1-in, 2oz Cu PCB board | ||
| Junction to Ambient Thermal Resistance | RJA | 145 | C/W | PCB mounted | ||
| Operating and Storage Temperature Range | TJ, Tstg | 55 | 150 | C |
| Device Marking | Model | Shipping |
|---|---|---|
| LN2302LT1G | N02 | 10000/Tape&Reel |
| LN2302LT3G | N02 | 3000/Tape&Reel |
1811031615_LRC-LN2302LT1G_C77962.pdf
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