PNP Silicon High Voltage Transistor LRC LMBT6520LT1G Suitable for Electronic Circuit Applications
Key Attributes
Model Number:
LMBT6520LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
200MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
350V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT6520LT1G
Package:
SOT-23
Product Description
LMBT6520LT1G, S-LMBT6520LT1G - PNP Silicon High Voltage Transistor
The LMBT6520LT1G and S-LMBT6520LT1G are PNP silicon transistors designed for high voltage applications. They offer a combination of high breakdown voltages and moderate current handling capabilities, making them suitable for various electronic circuits.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Compliance: RoHS requirements, AEC-Q101 Qualified and PPAP Capable (for S- prefix)
- Package: SOT-23
- Configuration: PNP
Technical Specifications
| Characteristic | Symbol | Value | Unit | Conditions |
| Maximum Ratings | ||||
| CollectorEmitter Voltage | V CEO | 350 | Vdc | |
| CollectorBase Voltage | V CBO | 350 | Vdc | |
| EmitterBase Voltage | V EBO | 5.0 | Vdc | |
| Base Current | I B | 250 | mA | |
| Collector Current Continuous | I C | 500 | mAdc | |
| Total Device Dissipation (FR5 Board) | PD | 225 | mW | TA = 25C; Derate above 25C 1.8 mW/C |
| Thermal Resistance, Junction to Ambient (FR5 Board) | RJA | 556 | C/W | |
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | TA = 25C; Derate above 25C 2.4 mW/C |
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | RJA | 417 | C/W | |
| Junction and Storage Temperature | TJ , Tstg | 55 to +150 | C | |
| Off Characteristics | ||||
| CollectorEmitter Breakdown Voltage | V (BR)CEO | 350 | Vdc | I C = 1.0 mA |
| CollectorBase Breakdown Voltage | V (BR)CBO | 350 | Vdc | I E = 100 A |
| EmitterBase Breakdown Voltage | V (BR)EBO | 5.0 | Vdc | I E = 10 A |
| Collector Cutoff Current | I CBO | 50 | nA | V CB = 250V |
| Emitter Cutoff Current | I EBO | 50 | nA | V EB = 4.0V |
| On Characteristics | ||||
| DC Current Gain | hFE | 20200 | See detailed conditions below | |
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.30 to 1.0 | Vdc | See detailed conditions below |
| Base Emitter Saturation Voltage | VBE(sat) | 0.75 to 0.90 | Vdc | See detailed conditions below |
| BaseEmitter On Voltage | V BE(on) | 2.0 | Vdc | I C = 100mAdc, V CE = 10V |
| Small-Signal Characteristics | ||||
| Current GainBandwidth Product | f T | 40200 | MHz | V CE = 20 V, I C = 10mA, f = 20 MHz |
| Collector Base Capacitance | C cb | 6.0 | pF | V CB = 20 V, f = 1.0 MHz |
| Emitter Base Capacitance | C eb | 100 | pF | V EB= 0.5 V, f = 1.0 MHz |
| Device Marking | Shipping |
| LMBT6520LT1G | 3000/Tape&Reel |
| LMBT6520LT3G | 10000/Tape&Reel |
| S-LMBT6520LT1G | 3000/Tape&Reel |
| S-LMBT6520LT3G | 10000/Tape&Reel |
2111041830_LRC-LMBT6520LT1G_C2912034.pdf
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