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quality PPAP Capable N Channel MOSFET LRC S LN4501SLT1G Designed for Load Switching in Portable Electronics factory
quality PPAP Capable N Channel MOSFET LRC S LN4501SLT1G Designed for Load Switching in Portable Electronics factory
quality PPAP Capable N Channel MOSFET LRC S LN4501SLT1G Designed for Load Switching in Portable Electronics factory
quality PPAP Capable N Channel MOSFET LRC S LN4501SLT1G Designed for Load Switching in Portable Electronics factory

PPAP Capable N Channel MOSFET LRC S LN4501SLT1G Designed for Load Switching in Portable Electronics

Key Attributes
Model Number: S-LN4501SLT1G
Product Custom Attributes
Mfr. Part #:
S-LN4501SLT1G
Package:
SOT-23
Product Description

Product Overview

The S-LN4501SLT1G is a 20V N-Channel (D-S) MOSFET designed for load/power switching in portable and computing applications, as well as DC-DC conversion. It features a low voltage gate drive rated at 2.5V and complies with RoHS requirements and Halogen Free. The device is AEC-Q101 qualified and PPAP capable when using the 'S-' prefix for automotive and other applications requiring unique site and control change requirements.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Qualification: AEC-Q101 (with 'S-' prefix)
  • PPAP Capable: Yes (with 'S-' prefix)

Technical Specifications

Parameter Symbol Limits (Note 1) Unit Description
DrainSource Voltage VDSS 20 V
GatetoSource Voltage VGS 12 V
Steady State Power Dissipation PD 1.25 W (Ta = 25C)
Pulsed Drain Current IDM 12 A (tp = 10 s)
Operating and Storage Temperature Range TJ/Tstg 55~+150 C
Thermal Resistance, JunctiontoAmbient RJA 102 C/W (Note 2)
Continuous Drain Current (Steady State) ID 3.2 (TA = 25C) / 2.3 (TA = 75C) / 0.8 (TA = 85C) A (Note 1)
DrainSource Breakdown Voltage V(BR)DSS 20 V (VGS = 0 V, ID = 250 A)
Zero Gate Voltage Drain Current IDSS - A (VDS= 20 V, VGS= 0 V)
GateBody Leakage Current IGSS 100 nA (VDS = 0 V, VGS = 12 V)
Gate Threshold Voltage VGS(th) 1.2 V (VDS = VGS, ID = 250 A)
Static DrainSource OnState Resistance RDS(on) 35 m (VGS = 4.5 V, ID = 2 A)
Static DrainSource OnState Resistance RDS(on) 75 m (VGS = 2.5 V, ID = 1.5 A)
Input Capacitance Ciss 262 pF (VGS = 0 V, f = 1.0MHz,VDS= 10 V)
Output Capacitance Coss 50 pF (VGS = 0 V, f = 1.0MHz,VDS= 10 V)
Reverse Transfer Capacitance Crss 41 pF (VGS = 0 V, f = 1.0MHz,VDS= 10 V)
Turn-On Delay Time td(on) 6.2 ns (VDS = 10 V, VGS = 10 V,ID = 2 A, RG = 4.7 )
Rise Time tr 24 ns (VDS = 10 V, VGS = 10 V,ID = 2 A, RG = 4.7 )
Turn-Off Delay Time td(off) 46 ns (VDS = 10 V, VGS = 10 V,ID = 2 A, RG = 4.7 )
Fall Time tf 2 ns (VDS = 10 V, VGS = 10 V,ID = 2 A, RG = 4.7 )
Diode Forward Voltage VSD 0.7 V (IS = 1 A,VGS = 0 V)
Reverse Recovery Time trr 26 ns (VDD=10V,IF=3.2A,dIF/dt=60A/us)
Reverse Recovery Charge Qrr 2.1 nC (VDD=10V,IF=3.2A,dIF/dt=60A/us)
Continuous Current IS 3.2 A (TA =25C)
Pulsed Current ISM 12 A (TA =25C)
Reverse Recovery Current IRRM 0.14 A (VDD=10V,IF=3.2A,dIF/dt=60A/us)
Model Marking Shipping Package
S-LN4501SLT1G S45 3000/Tape&Reel SOT23(TO-236AB)
S-LN4501SLT3G S45 10000/Tape&Reel SOT23(TO-236AB)

Note 1: Surface mounted on "1.5 x 1.5" FR4 board using 1 sq in pad, 2 oz Cu.

Note 2: Surfacemounted on FR4 board using the minimum recommended pad size.

Note 3: Pulse test: PW 300us duty cycle 2%.


2504101957_LRC-S-LN4501SLT1G_C45366614.pdf

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