NPN silicon transistor LRC LBC817-25LT1G for amplification and switching in compact SOT23 electronic package
Key Attributes
Model Number:
LBC817-25LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC817-25LT1G
Package:
SOT-23
Product Description
Product Overview
The LBC817 series are general-purpose NPN silicon transistors designed for various electronic applications. They offer a range of DC current gain (hFE) options, making them suitable for amplification and switching tasks. These transistors are available in the compact SOT-23 package.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Origin: NPN Silicon
- Certifications: RoHS compliant
- Device Marking: LBC81716LT1G = 6A; LBC81725LT1G = 6B; LBC81740LT1G = 6C
Technical Specifications
| Characteristic | Symbol | LBC817-16 | LBC817-25 | LBC817-40 | Unit | Conditions |
| CollectorEmitter Voltage | V CEO | 45 | 45 | 45 | V | |
| CollectorBase Voltage | V CBO | 50 | 50 | 50 | V | |
| EmitterBase Voltage | V EBO | 5.0 | 5.0 | 5.0 | V | |
| Collector Current Continuous | I C | 500 | 500 | 500 | mAdc | |
| Total Device Dissipation (FR5 Board) | P D | 225 | 225 | 225 | mW | TA = 25C |
| Derate above 25C | 1.8 | 1.8 | 1.8 | mW/C | ||
| Thermal Resistance, Junction to Ambient (FR5 Board) | R JA | 556 | 556 | 556 | C/W | |
| Total Device Dissipation (Alumina Substrate) | P D | 300 | 300 | 300 | mW | TA = 25C |
| Derate above 25C | 2.4 | 2.4 | 2.4 | mW/C | ||
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | R JA | 417 | 417 | 417 | C/W | |
| Junction and Storage Temperature | T J , T stg | 55 to +150 | 55 to +150 | 55 to +150 | C | |
| CollectorEmitter Breakdown Voltage | V (BR)CEO | 45 | 45 | 45 | V | IC = 10 mA |
| CollectorEmitter Breakdown Voltage | V (BR)CES | 50 | 50 | 50 | V | VEB = 0, IC = 10 A |
| EmitterBase Breakdown Voltage | V (BR)EBO | 5.0 | 5.0 | 5.0 | V | IE = 1.0 A |
| Collector Cutoff Current | I CBO | 100 | 100 | 100 | nA | VCB = 20 V |
| Collector Cutoff Current | I CBO | 5.0 | 5.0 | 5.0 | A | VCB = 20 V, TA = 150C |
| DC Current Gain | h FE | 100250 | 160400 | 250600 | IC= 100 mA, V CE = 1.0 V | |
| CollectorEmitter Saturation Voltage | V CE(sat) | 0.7 | 0.7 | 0.7 | V | IC = 500 mA, IB = 50 mA |
| BaseEmitter On Voltage | V BE(on) | 1.2 | 1.2 | 1.2 | V | IC = 500 mA, V CE = 1.0 V |
| CurrentGain Bandwidth Product | f T | 100 | 100 | 100 | MHz | IC = 10 mA, V CE = 5.0 V dc, f = 100 MHz |
| Output Capacitance | C obo | 10 | 10 | 10 | pF | V CB = 10 V, f = 1.0 MHz |
2304140030_LRC-LBC817-25LT1G_C12766.pdf
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