High Speed P Channel MOSFET LRC LSI1013XT1G with 1.8 Volt Gate Source and PPAP Capable S Prefix Model
Product Overview
The LSI1013XT1G and S-LSI1013XT1G are P-Channel 1.8-V (G-S) MOSFETs designed for high-speed switching applications. These devices feature a fast switching speed of 14 ns, high-side switching capability, and Gate to Source ESD protection up to 2000V. They are RoHS compliant and Halogen Free. The S-prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with unique site and control change requirements. Ideal for use in drivers for relays, solenoids, lamps, and displays, as well as battery-operated systems, power supply converter circuits, and load/power switching in devices like cell phones and pagers.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Product Type: P-Channel 1.8-V (G-S) MOSFET
- Model Numbers: LSI1013XT1G, S-LSI1013XT1G
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S-prefix models)
- Production Capability: PPAP capable (S-prefix models)
- ESD Protection: Gate to Source: 2000V (HBM, Method 3015)
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| DraintoSource Voltage | VDSS | -20 | V | |||
| GatetoSource Voltage | VGS | 1 | ||||
| Pulsed Drain Current | IDM | (Note 1) | -1000 | mA | ||
| Continuous Source Current | IS | -275 | mA | |||
| Operating Junction and Storage Temperature | Tj,Tstg | -55 | +150 | |||
| Gate-Source ESD Rating | ESD | (HBM, Method 3015) | 2000 | V | ||
| Continuous Drain Current | ID | TA = 25, Steady State (Note 1) | -300 | mA | ||
| Continuous Drain Current | ID | TA = 85, Steady State (Note 1) | -275 | mA | ||
| Power Dissipation | PD | TA = 25 (Note 2) | 275 | mW | ||
| Power Dissipation | PD | TA = 85 (Note 2) | 160 | mW | ||
| DrainSource Breakdown Voltage | VBRDSS | (VGS = 0, ID = -250A) | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | (VDS = 16 V, VGS = 0 V) | -0.3 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | (VDS = 16 V, VGS = 0 V, TJ = 85) | -100 | nA | ||
| GatetoSource Leakage Current | IGSS | (VDS = 0 V, VGS = 4.5 V) | 2 | A | ||
| Gate Threshold Voltage | VGS(th) | (VDS = VGS , ID = 250A) | -0.45 | -1.3 | V | |
| DraintoSource On Resistance | RDS(on) | (VGS = 4.5 V, ID = 350 mA) | 1.8 | 2.7 | ||
| DraintoSource On Resistance | RDS(on) | (VGS = 2.5 V, ID = 300 m A) | 2.5 | 3.5 | ||
| DraintoSource On Resistance | RDS(on) | (VGS = 1.8 V, ID = 10 m A) | 4.0 | |||
| Diode Forward Voltage | VSD | (IS = 150 mA, VGS = 0 V) | -0.8 | -1.2 | V | |
| TurnOn Delay Time | td(ON) | (VDD = 10 V, RL = 47 ,ID=200 mA, VGEN = 4.5 V, RG = 10) | 5 | ns | ||
| Rise Time | tr | (VDD = 10 V, RL = 47 ,ID=200 mA, VGEN = 4.5 V, RG = 10) | 9 | ns | ||
| TurnOff Delay Time | td(OFF) | (VDD = 10 V, RL = 47 ,ID=200 mA, VGEN = 4.5 V, RG = 10) | 35 | ns | ||
| Fall Time | tf | (VDD = 10 V, RL = 47 ,ID=200 mA, VGEN = 4.5 V, RG = 10) | 11 | ns | ||
| Total Gate Charge | Qg | (VDS=10 V,VGS= 4.5 V,ID=250 mA) | 1500 | pC | ||
| Gate-Source Charge | Qgs | 150 | pC | |||
| Gate-Drain Charge | Qgd | 450 | pC |
Device Marking and Resistor Values
Device Code: B (Specific Device Code)
Month Code: M
Part Numbers: LSI1013XT1G, S-LSI1013XT1G
Package Information
Package Type: SC89
Shipping: 3000/Tape&Reel (for LSI1013XT1G)
Outline and Dimensions (SC89 Package)
| Dimension | Millimeters (MIN) | Millimeters (NOM) | Millimeters (MAX) | Inches (MIN) | Inches (NOM) | Inches (MAX) |
|---|---|---|---|---|---|---|
| A | 1.50 | 1.60 | 1.70 | 0.059 | 0.063 | 0.067 |
| B | 0.75 | 0.85 | 0.95 | 0.030 | 0.034 | 0.040 |
| C | 0.60 | 0.70 | 0.80 | 0.024 | 0.028 | 0.031 |
| D | 0.23 | 0.28 | 0.33 | 0.009 | 0.011 | 0.013 |
| G | 0.50BSC | 0.020BSC | ||||
| H | 0.53REF | 0.021REF | ||||
| J | 0.10 | 0.15 | 0.20 | 0.004 | 0.006 | 0.008 |
| K | 0.30 | 0.40 | 0.50 | 0.012 | 0.016 | 0.020 |
| L | 1.10REF | 0.043REF | ||||
| M | 10 | 10 | ||||
| N | 10 | 10 | ||||
| S | 1.50 | 1.60 | 1.70 | 0.059 | 0.063 | 0.067 |
Notes:
- 1. Pulse width limited by maximum junction temperature.
- 2. Surface Mounted on FR4 Board.
Disclaimer
Before using our Products, you are requested to carefully read this document and fully understand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRCs Products against warning, caution or note contained in this document. All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products, please confirm the latest information with a LRC sales representative.
2111041830_LRC-LSI1013XT1G_C383277.pdf
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