NPN Silicon General Purpose Transistor LRC L8050PLT1G Offering Compact SOT-23 Package and Performance
Key Attributes
Model Number:
L8050PLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
150nA
Pd - Power Dissipation:
225mW
Type:
NPN
Current - Collector(Ic):
800mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
L8050PLT1G
Package:
SOT-23
Product Description
Product Overview
The L8050 is an NPN silicon general-purpose transistor from LESHAN RADIO COMPANY, LTD., designed for high current capacity in a compact SOT-23 package. It features an epitaxial planar type construction and offers an NPN complement, the L8050. A Pb-Free package option is available.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Type: NPN Silicon General Purpose Transistor
- Package: SOT-23
- Certifications: AEC-Q101 Qualified and PPAP Capable (for 'S-' prefix variants)
- Pb-Free Option: Available
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Collector-Base Voltage | VCBO | 40 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current-Continuous | IC | 800 | mAdc | |||
| Total Device Dissipation (FR-5 Board) | PD | 225 | mW | TA=25C, Derate above 25C: 1.8 mW/C | ||
| Thermal Resistance (Junction to Ambient, FR-5 Board) | RJ A | 556 | C/W | |||
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | TA=25C, Derate above 25C: 2.4 mW/C | ||
| Thermal Resistance (Junction to Ambient, Alumina Substrate) | RJ A | 417 | C/W | |||
| Junction and Storage Temperature | Tj,Tstg | -55 | +150 | C | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 25 | V | IC=1.0mA | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE=100 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 40 | V | IC=100 | ||
| Collector Cutoff Current | ICBO | 150 | nA | VCB=35V | ||
| Emitter Cutoff Current | IEBO | 150 | nA | VEB=4V | ||
| DC Current Gain | hFE | 100 | 600 | IC=100mA,VCE=1V (hFE ranges: P:100~200, Q:150~300, R:200-400, S:300-600) | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | V | IC=800mA, IB=80mA |
2108161130_LRC-L8050PLT1G_C2681751.pdf
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