Silicon Transistor LRC LBC850CLT1G Offering Low Saturation Voltage and High Current Gain for Circuits
Key Attributes
Model Number:
LBC850CLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC850CLT1G
Package:
SOT-23
Product Description
Product Overview
The LBC850CLT1G and S-LBC850CLT1G are NPN silicon general-purpose transistors designed for a wide range of applications. They offer excellent performance with high current gain and low saturation voltages. The S-prefix variant is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications with stringent control change requirements. These devices are RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Product Series: LBC850CLT1G, S-LBC850CLT1G
- Material: Silicon
- Certifications: AEC-Q101 qualified (S-prefix), RoHS compliant, Halogen Free
- Moisture Sensitivity Level: 1
- ESD Rating (Human Body Model): >4000 V
- ESD Rating (Machine Model): >400 V
Technical Specifications
| Parameter | Symbol | LBC850CLT1G | S-LBC850CLT1G | Unit | Min. | Typ. | Max. | |
| MAXIMUM RATINGS (Ta = 25C) | ||||||||
| CollectorEmitter Voltage | VCEO | 45 | 45 | V | ||||
| CollectorBase Voltage | VCBO | 50 | 50 | V | ||||
| EmitterBase Voltage | VEBO | 6 | 6 | V | ||||
| Collector Current Continuous | IC | 100 | 100 | mA | ||||
| THERMAL CHARACTERISTICS | ||||||||
| Junction and Storage temperature | TJ,Tstg | -55 | -55 | ~+150 | ~+150 | C | ||
| ELECTRICAL CHARACTERISTICS (Ta= 25C) | ||||||||
| OFF CHARACTERISTICS | ||||||||
| CollectorEmitter Breakdown Voltage (IC = 10 mA) | VBR(CEO) | 45 | 45 | V | ||||
| CollectorEmitter Breakdown Voltage (IC = 10 A, VEB = 0) | VBR(CES) | 50 | 50 | V | ||||
| CollectorBase Breakdown Voltage (IC = 10 A) | VBR(CBO) | 50 | 50 | V | ||||
| EmitterBase Breakdown Voltage (IE = 1.0 A) | VBR(EBO) | 6 | 6 | V | ||||
| Collector Cutoff Current (VCB = 30 V) | ICBO | nA | 15 | |||||
| Collector Cutoff Current (VCB = 30 V, TA = 150C) | ICBO | A | 5 | |||||
| ON CHARACTERISTICS | ||||||||
| DC Current Gain (IC = 2.0 mA, VCE = 5.0 V) | HFE | 420 | 520 | 800 | ||||
| CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | V | 0.25 | |||||
| CollectorEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) | VCE(sat) | V | 0.6 | |||||
| BaseEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | V | 0.7 | |||||
| BaseEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) | VBE(sat) | V | 0.9 | |||||
| BaseEmitter Voltage (IC = 2.0 mA, VCE = 5.0 V) | VBE(on) | V | 0.58 | 0.66 | ||||
| BaseEmitter Voltage (IC = 10 mA, VCE = 5.0 V) | VBE(on) | V | 0.70 | 0.77 | ||||
| SMALLSIGNAL CHARACTERISTICS | ||||||||
| CurrentGain Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) | fT | 100 | 100 | MHz | ||||
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | pF | 4.5 | |||||
| Noise Figure (IC = 0.2 mA,VCE = 5.0 V, RS = 2.0 k f = 1.0 kHz, BW = 200 Hz) | NF | dB | 4.0 | |||||
2212131909_LRC-LBC850CLT1G_C5273107.pdf
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