1200V 40A Trench Field Stop IGBT luxin-semi AU40N120T3A2 suitable for frequency converters motor drives

Key Attributes
Model Number: AU40N120T3A2
Product Custom Attributes
Td(off):
180ns
Pd - Power Dissipation:
416W
Td(on):
80ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
100pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.9V@250uA
Gate Charge(Qg):
260nC@15V
Operating Temperature:
-40℃~+150℃
Pulsed Current- Forward(Ifm):
80A
Output Capacitance(Coes):
190pF
Reverse Recovery Time(trr):
250ns
Switching Energy(Eoff):
1.65mJ
Turn-On Energy (Eon):
4.8mJ
Mfr. Part #:
AU40N120T3A2
Package:
TO-247
Product Description

Product Overview

The AU40N120T3A2 is a 1200V, 40A Trench Field Stop IGBT designed for high reliability and ruggedness. It features Trench-Stop Technology for very tight parameter distribution, stable temperature behavior, and easy parallel switching due to a positive temperature coefficient in VCE(SAT). This IGBT is suitable for applications requiring enhanced avalanche capability, such as frequency converters and motor drives.

Product Attributes

  • Brand: LU-Semi
  • Product Code: AU40N120T3A2
  • Package: TO247
  • Packaging: Tube

Technical Specifications

ParameterSymbolValueUnitConditions
Collector-Emitter Breakdown VoltageVCE1200V
1200V
1300VVGE=0V , IC=250A
DC collector currentIC80ATC = 25C
40ATC = 100C
Diode Forward currentIF40ATC = 25C
20ATC = 100C
Continuous Gate-emitter voltageVGE20V
Transient Gate-emitter voltageVGE30V
Turn off safe operating area-160AVCE 1200V, Tj 150C
Pulsed Collector CurrentICM160AVGE =15V, tp limited by Tjmax
Diode Pulsed CurrentIFpuls80Atp limited by Tjmax
Short Circuit Withstand TimeTsc10sVGE= 15V, VCE 600V
Power dissipationPtot416WTj=25C
Operating junction temperatureTj-40...+150C
Storage temperatureTs-55...+150C
Soldering temperature260Cwave soldering 1.6mm from case for 10s
IGBT thermal resistance, junction - caseR(j-c)0.3K/W
Diode thermal resistance, junction - caseR(j-c)1K/W
Thermal resistance, junction - ambientR(j-a)40K/W
Gate threshold voltageVGE(th)5.2 / 5.9 / 6.5VVGE=VCE, IC=250A
Collector-Emitter Saturation voltageVCE(sat)1.75VVGE=15V, IC=40A, Tj = 25C
2.15 / 2.35VVGE=15V, IC=40A, Tj = 150C
Zero gate voltage collector currentICES250AVCE = 1200V, VGE = 0V, Tj = 25C
2500AVCE = 1200V, VGE = 0V, Tj = 150C
Gate-emitter leakage currentIGES100nAVCE = 0V, VGE = 20V
Transconductancegfs15SVCE=20V, IC=15A
Input capacitanceCies6100pFVCE = 25V, VGE = 0V, f = 1MHz
Output capacitanceCoes190pFVCE = 25V, VGE = 0V, f = 1MHz
Reverse transfer capacitanceCres100pFVCE = 25V, VGE = 0V, f = 1MHz
Gate chargeQG260nCVCC = 960V, IC = 40A, VGE = 15V
Short circuit collector currentICSC250AVGE=15V,tSC10us, VCC=600V, Tjstart=25C
Turn-on delay timetd(on)80nsVCC = 600V, IC = 40A, VGE = 0/15V, Rg=10, Tj = 25C
Rise timetr50nsVCC = 600V, IC = 40A, VGE = 0/15V, Rg=10, Tj = 25C
Turn-on energyEon4.8mJVCC = 600V, IC = 40A, VGE = 0/15V, Rg=10, Tj = 25C
Turn-off delay timetd(off)180nsVCC = 600V, IC = 40A, VGE = 0/15V, Rg=10, Tj = 25C
Fall timetf80nsVCC = 600V, IC = 40A, VGE = 0/15V, Rg=10, Tj = 25C
Turn-off energyEoff1.65mJVCC = 600V, IC = 40A, VGE = 0/15V, Rg=10, Tj = 25C
Diode Forward VoltageVFM2.5VIF = 15A, Tj = 25C
Reverse Recovery TimeTrr250nsIF= 15A, VR = 600V, di/dt= 700A/s, Tj = 25C
Reverse Recovery CurrentIrr11AIF= 15A, VR = 600V, di/dt= 700A/s, Tj = 25C
Reverse Recovery ChargeQrr1CIF= 15A, VR = 600V, di/dt= 700A/s, Tj = 25C

2410121321_luxin-semi-AU40N120T3A2_C4153732.pdf

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