High voltage PNP epitaxial planar transistor LRC LMBTA94LT1G designed for performance in demanding electronic circuits
Key Attributes
Model Number:
LMBTA94LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
-
Type:
PNP
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBTA94LT1G
Package:
SOT-23
Product Description
Product Overview
The LMBTA94LT1G is a PNP epitaxial planar transistor designed for high-voltage applications. It features a high breakdown voltage (VCEO=400V Min.) and is complementary to the LMBTA94LT1G. This transistor is suitable for applications requiring high voltage capabilities.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material Compliance: RoHS requirements
- Device Marking: 4Z (for LMBTA94LT1G)
- Special Prefix: S- (for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable)
Technical Specifications
| Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions |
| VCEO | Collector to Emitter Voltage | - | - | -400 | V | IC=-1mA, IB=0 |
| VCBO | Collector to Base Voltage | - | - | -400 | V | IC=-100uA, IE=0 |
| VEBO | Emitter to Base Voltage | - | - | -6 | V | IE=-10uA, IC=0 |
| IC | Collector Current | - | - | -150 | mA | |
| BVCBO | Collector to Base Breakdown Voltage | -400 | - | - | V | IC=-100uA, IE=0 |
| BVCEO | Collector to Emitter Breakdown Voltage | -400 | - | - | V | IC=-1mA, IB=0 |
| BVEBO | Emitter to Base Breakdown Voltage | -6 | - | - | V | IE=-10uA, IC=0 |
| ICBO | Collector Cut-off Current | - | - | -100 | nA | VCB=-400V, IE=0 |
| IEBO | Emitter Cut-off Current | - | - | -100 | nA | VEB=-6V, IC=0 |
| ICES | Collector Saturation Current | - | - | -500 | nA | VCE=-400V, VBE=0 |
| VCE(sat)1 | Collector-Emitter Saturation Voltage | - | - | -200 | mV | IC=-1mA, IB=-0.1mA |
| VCE(sat)2 | Collector-Emitter Saturation Voltage | - | - | -300 | mV | IC=-10mA, IB=-1mA |
| VCE(sat)3 | Collector-Emitter Saturation Voltage | - | - | -600 | mV | IC=-50mA, IB=-5mA |
| VBE(sat) | Base-Emitter Saturation Voltage | - | - | -900 | mV | IC=-10mA, IB=-1mA |
| hFE1 | DC Current Gain | 50 | - | - | VCE=-10V, IC=-1mA | |
| hFE2 | DC Current Gain | 75 | - | 200 | VCE=-10V, IC=-10mA | |
| hFE3 | DC Current Gain | 60 | - | - | VCE=-10V, IC=-50mA | |
| hFE4 | DC Current Gain | 20 | - | - | VCE=-10V, IC=-100mA | |
| Cob | Output Capacitance | - | 4 | 6 | pF | VCE=-10V, f=1MHz |
| Storage Temperature | Storage Temperature | -55 | - | +150 | C | |
| Junction Temperature | Junction Temperature | - | - | +150 | C | |
| Total Power Dissipation | Total Power Dissipation | - | - | 350 | mW | Ta=25C |
1809051321_LRC-LMBTA94LT1G_C131775.pdf
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