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quality Integrated Bias Resistor Network PNP Silicon Transistor LRC LMUN2135LT1G SOT23 Package Automotive Grade factory
quality Integrated Bias Resistor Network PNP Silicon Transistor LRC LMUN2135LT1G SOT23 Package Automotive Grade factory

Integrated Bias Resistor Network PNP Silicon Transistor LRC LMUN2135LT1G SOT23 Package Automotive Grade

Key Attributes
Model Number: LMUN2135LT1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
2.2kΩ
Resistor Ratio:
0.047
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LMUN2135LT1G
Package:
SOT-23
Product Description

Product Overview

The LESHAN RADIO COMPANY, LTD. BRT (Bias Resistor Transistor) is a PNP silicon surface mount transistor featuring an integrated monolithic bias resistor network. Designed to replace discrete transistors and external bias resistors, this device simplifies circuit design, reduces board space, and lowers component count. It is housed in a SOT-23 package suitable for low power surface mount applications and is compatible with wave or reflow soldering. The modified gull-winged leads offer thermal stress absorption during soldering. The S-LMUN2135LT1G variant is available for automotive and other applications requiring unique site and control change requirements, meeting AEC-Q101 qualification and PPAP capability.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Product Type: PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
  • Package: SOT-23 (TO-236AB)
  • Certifications: AEC-Q101 Qualified (S- prefix variant)
  • Compliance: Pb-Free

Technical Specifications

Characteristic Symbol Value Unit Notes
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC 100 mAdc
Total Device Dissipation PD 246 (Note 1.)
400 (Note 2.)		 mW Derate above 25C: 2.0 (Note 1.), 3.2 (Note 2.) C/W
Thermal Resistance Junction-to-Ambient RJA 508 (Note 1.)
311 (Note 2.)		 C/W
Thermal Resistance Junction-to-Lead RJL 174 (Note 1.)
208 (Note 2.)		 C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 C
Collector-Base Cutoff Current ICBO 100 nAdc VCB = 50 V, IE = 0
Collector-Emitter Cutoff Current ICEO 500 nAdc VCE = 50 V, IB = 0
Emitter-Base Cutoff Current IEBO 0.2 mAdc VBE = 6.0 V
Collector-Base Breakdown Voltage V(BR)CBO 50 Vdc IC = 10 A, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 50 Vdc Note 3 (IC = 2.0 mA, IB = 0)
DC Current Gain hFE 80 VCE = 10 V, IC = 5.0 mA (Note 3)
Collector-Emitter Saturation Voltage VCE(sat) 0.25 Vdc IC = 10 mA, IB = 1 mA (Note 3)
Output Voltage (on) VOL 0.2 Vdc VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k (Note 3)
Output Voltage (off) VOH 4.9 Vdc VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k (Note 3)
Input Resistor R 1 k
Resistor Ratio R1/R2 0.038 0.056 Typ: 0.047
Model Number LMUN2135LT1G Device Marking: A6M, Shipping: 3000/Tape&Reel
Model Number (Automotive) S-LMUN2135LT1G

Notes:

  1. FR4 @ Minimum Pad
  2. FR4 @ 1.0 x 1.0 inch Pad
  3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%

2304140030_LRC-LMUN2135LT1G_C136189.pdf

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