Epitaxial planar NPN transistor LRC LMBTA44LT1G with 400 volt breakdown voltage and RoHS compliant materials

Key Attributes
Model Number: LMBTA44LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
50MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBTA44LT1G
Package:
SOT-23
Product Description

Product Overview

The LMBTA44LT1G is an NPN epitaxial planar transistor designed for applications requiring high voltage. It is complementary to the LMBTA94LT1G.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material Compliance: RoHS requirements
  • Device Marking: 3D
  • Automotive/Specialty Prefix: S- (for S-LMBTA44LT1G), AEC-Q101 Qualified and PPAP Capable

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIc= 100A, IE=0400V
Collector-emitter breakdown voltageV(BR)CEOIC= 1mA , IB=0400V
Emitter-base breakdown voltageV(BR)EBOIE=100A, IC=05V
Collector cut-off currentICBOVCB=400V, IE=00.1A
Collector cut-off currentICEOVCE=350V5A
Emitter cut-off currentIEBOVEB= 4V, IC=00.1A
DC current gainHFE(1)VCE=10V, IC=10 mA80300
DC current gainHFE(2)VCE=10V, IC=1mA50
DC current gainHFE(3)VCE=10V, IC=50 mA40
Collector-emitter saturation voltageVCE(sat)IC=10 mA, IB=1mA0.2V
Collector-emitter saturation voltageVCE(sat)IC=50 mA, IB=5mA0.3V
Base-emitter saturation voltageVBE(sat)IC=10 mA, IB= 1 mA0.9V
Transition frequencyf TVCE=10V, IC=20mA50MHz
Storage Temperature-55+150C
Junction Temperature+150C
Total Power Dissipation(Ta=25C)350mW
Collector to Base VoltageVCBO400V
Collector to Emitter VoltageVCEO400V
Emitter to Base VoltageVEBO5V
Collector CurrentIC200mA

1809201022_LRC-LMBTA44LT1G_C79254.pdf

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