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quality power MOSFET MagnaChip Semicon MMF50R280PTH designed to reduce EMI and power dissipation in circuits factory
quality power MOSFET MagnaChip Semicon MMF50R280PTH designed to reduce EMI and power dissipation in circuits factory

power MOSFET MagnaChip Semicon MMF50R280PTH designed to reduce EMI and power dissipation in circuits

Key Attributes
Model Number: MMF50R280PTH
Product Custom Attributes
Mfr. Part #:
MMF50R280PTH
Package:
TO-220F
Product Description

Product Overview

The MMF50R280P is a power MOSFET utilizing Magnachip's advanced super junction technology, designed for high efficiency with very low on-resistance and gate charge. Its optimized charge coupling technology offers an advantage of low EMI and low switching loss, making it suitable for various power electronics applications.

Product Attributes

  • Brand: Magnachip Semiconductor Ltd.
  • Product Code: MMF50R280P
  • Marking: 50R280P
  • Package: TO-220F
  • Packing: Tube
  • Certifications: Halogen Free, RoHS Status: Halogen Free
  • Temp. Range: -55 ~ 150

Technical Specifications

ParameterSymbolRatingUnitNote
Drain Source voltageVDSS500V
Gate Source voltageVGSS±30V
Continuous drain currentID13ATC=25; limited by maximum junction temperature
Continuous drain currentID8.2ATC=100; limited by maximum junction temperature
Pulsed drain currentIDM39APulse width tP limited by Tj,max
Power dissipationPD32W
Single - pulse avalanche energyEAS231mJ
MOSFET dv/dt ruggednessdv/dt50V/ns
Diode dv/dt ruggednessdv/dt15V/nsISD ≤ ID, VDS peak ≤ V(BR)DSS
Storage temperatureTstg-55 ~150
Maximum operating junction temperatureTj150
Thermal resistance, junction-case maxRthjc3.88/W
Thermal resistance, junction-ambient maxRthja62.5/W
Drain Source Breakdown voltageV(BR)DSS500VVGS = 0V, ID=0.25mA
Gate Threshold VoltageVGS(th)2.5 ~ 3.5VVDS = VGS, ID=0.25mA
Zero Gate Voltage Drain CurrentIDSS1μAVDS = 500V, VGS = 0V
Gate Leakage CurrentIGSS100nAVGS = ±30V, VDS =0V
Drain-Source On State ResistanceRDS(ON)0.25 ~ 0.28ΩVGS = 10V, ID = 4.2A
Input CapacitanceCiss999pFVDS = 25V, VGS = 0V, f = 1.0MHz
Output CapacitanceCoss500pFVDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer CapacitanceCrss30.8pFVDS = 25V, VGS = 0V, f = 1.0MHz
Effective Output Capacitance Energy RelatedCo(er)41-VDS = 0V to 400V, VGS = 0V,f = 1.0MHz
Turn On Delay Timetd(on)17nsVGS = 10V, RG = 25Ω, VDS = 250V, ID = 13A
Rise Timetr45nsVGS = 10V, RG = 25Ω, VDS = 250V, ID = 13A
Turn Off Delay Timetd(off)84nsVGS = 10V, RG = 25Ω, VDS = 250V, ID = 13A
Fall Timetf40nsVGS = 10V, RG = 25Ω, VDS = 250V, ID = 13A
Total Gate ChargeQg28.6nCVGS = 10V, VDS = 400V, ID = 11A
Gate Source ChargeQgs6.8nCVGS = 10V, VDS = 400V, ID = 11A
Gate Drain ChargeQg d12nCVGS = 10V, VDS = 400V, ID = 11A
Gate ResistanceRG2.7ΩVGS = 0V, f = 1.0MHz
Continuous Diode Forward CurrentISD13A
Diode Forward VoltageVSD1.4VISD = 13 A, VGS = 0 V
Reverse Recovery Timetrr300nsISD = 13 A, di/dt = 100 A/μs, VDD = 100 V
Reverse Recovery ChargeQrr3.5μCISD = 13 A, di/dt = 100 A/μs, VDD = 100 V
Reverse Recovery CurrentIrrm23.4AISD = 13 A, di/dt = 100 A/μs, VDD = 100 V

Applications

  • PFC Power Supply Stages
  • Switching Applications
  • Adapter
  • Motor Control
  • DC DC Converters

2509121533_MagnaChip-Semicon-MMF50R280PTH_C51891819.pdf

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