high voltage MOSFET MASPOWER MS2N350HGC0 optimized for capacitor discharge pulse circuits and X-ray generation
Key Attributes
Model Number:
MS2N350HGC0
Product Custom Attributes
Drain To Source Voltage:
3.5kV
Current - Continuous Drain(Id):
2A
RDS(on):
19Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
68pF
Number:
1 N-channel
Output Capacitance(Coss):
210pF
Pd - Power Dissipation:
463W
Input Capacitance(Ciss):
3.54nF
Gate Charge(Qg):
94nC
Mfr. Part #:
MS2N350HGC0
Package:
TO-247
Product Description
Product Overview
The MS2N350HGC0 H1.02 from Maspower is a high-speed switching power MOSFET designed for demanding high-voltage applications. It features a fast intrinsic diode, minimized gate charge, and very low intrinsic capacitances, enabling efficient and rapid switching. This MOSFET is ideal for high voltage power supplies, capacitor discharge applications, pulse circuits, and laser and X-ray generation systems.
Product Attributes
- Brand: Maspower
- Model: MS2N350HGC0 H1.02
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Electrical ratings | ||||||
| Drain-source voltage (VGS = 0) | VDS | 3500 | V | |||
| Gate- source voltage | VGS | ±30 | V | |||
| Drain current (continuous) at TC = 25 C | ID | 2 | A | |||
| Drain current (continuous) at TC = 100 C | ID | 1.6 | A | |||
| Drain current (pulsed) | IDM | 6 | A | |||
| Total dissipation at TC = 25 C | PD | 463 | W | |||
| Avalanche Current | IAR | 1.3 | A | |||
| Single pulse avalanche energy (starting TJ = 25 C, ID = IAR, VDD = 50 V,L=20mH) | EAS | 16.9 | mJ | |||
| Operating junction temperature | TJ | -55 | ~ | 150 | ||
| Storage temperature | Tstg | -55 | ~ | 150 | ||
| Maximum lead temperature for soldering purpose | TL | 300 | ||||
| Mounting Torque | Md | 1.13 | Nm | |||
| Weight | G | 6 | g | |||
| Electrical Characteristics (Tvj = 25C unless otherwise specified) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | ID = 250 A, VGS = 0 | 3500 | V | ||
| Zero gate voltage drain current (VGS = 0) | IDSS | VDS = Max rating | 100 | A | ||
| Zero gate voltage drain current (VGS = 0) | IDSS | VDS=Max rating, TC=125 C | 1000 | A | ||
| Gate-body leakage current (VDS = 0) | IGSS | VGS = ± 30 V | ±200 | nA | ||
| Gate threshold voltage | VGS(th) | VDS = VGS, ID = 250 A | 3.5 | 5.5 | V | |
| Static drain-source on resistance | RDS(on) | VGS = 10V, ID = 2A | 19 | 25 | ||
| Dynamic | ||||||
| Forward transconductance | gfs | VDS = 50 V, ID = 2A | 1.2 | 2.7 | S | |
| Input capacitance | Ciss | VDS=25V,f=1MHz,VGS=0 | 3540 | pF | ||
| Output capacitance | Coss | |||||
| Reverse transfer capacitance | Crss | |||||
| Total gate charge | Qg | VDD=1750V,ID=2A VGS=10V | 94 | nC | ||
| Gate-source charge | Qgs | |||||
| Gate-drain charge | Qgd | |||||
| Switching times | ||||||
| Turn-on delay time | td(on) | Resistive load VDD = 1750 V, ID =2A, VGS = 10 V, RG = 5(External) | ns | |||
| Rise time | tr | |||||
| Turn-off-delay time | td(off) | |||||
| Fall time | tf | |||||
| Source drain diode | ||||||
| Source-drain current | ISD | 4 | A | |||
| Source-drain current (pulsed) | ISDM | 12 | A | |||
| Forward on voltage | VSD | ISD= 1A, VGS= 0 | 0.9 | 1.5 | V | |
| Reverse recovery time | trr | ISD=2A, -di/dt=100A/s VDD= 1750V | 620 | ns | ||
| Reverse recovery charge | Qrr | |||||
| Reverse recovery current | IRRM | ISD=2A, -di/dt=100A/s VDD= 1750V | 1.1 | A | ||
| Reverse recovery time | trr | ISD=2A, di/dt=100A/s VDD= 1750 V TJ=125C | 880 | ns | ||
| Reverse recovery charge | Qrr | |||||
| Reverse recovery current | IRRM | ISD=2A, di/dt=100A/s VDD= 1750 V TJ=125C | 1.3 | A | ||
| Thermal data | ||||||
| Thermal resistance junction-case max | Rthj-case | 0.27 | W/ | |||
| Thermal resistance junction-ambient max | Rthj-amb | 50 | ||||
2411261901_MASPOWER-MS2N350HGC0_C37635850.pdf
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