power device Littelfuse IXYS MMJX1H40N150 1500V MOS gated thyristor with low gate drive requirements

Key Attributes
Model Number: MMJX1H40N150
Product Custom Attributes
Peak Off - State Voltage(Vdrm):
1.5kV
SCR Type:
1 SCR
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMJX1H40N150
Package:
BESOP-15
Product Description

Product Overview

The IXYS MMJX1H40N150 is a 1500V MOS Gated Thyristor featuring Silicon Chip on Direct-Copper Bond (DCB) Substrate for isolated mounting. It offers a very high current capability, high power density, and low gate drive requirements, making it suitable for applications such as capacitive discharge circuits, ignition circuits, and solid-state surge protection.

Product Attributes

  • Brand: IXYS
  • Origin: USA (implied by US patents)
  • Material: Silicon Chip on Direct-Copper Bond (DCB) Substrate
  • Certifications: 2500V~ Electrical Isolation

Technical Specifications

SymbolTest ConditionsMin.Typ.Max.Units
Maximum Ratings
VDM1500V
VGK Continuous±30V
VGK Transient±40V
ITSMTC = 25°C, 1µs15.5kA
ITSMTC = 25°C, 10µs6.4kA
PDTC = 25°C320W
TJ-55+150°C
TJM150°C
Tstg-55+150°C
TLMaximum Lead Temperature for Soldering300°C
TSOLD1.6 mm (0.062 in.) from Case for 10s260°C
VISOL50/60Hz, 1 minute2500V~
FCMounting Force50..200N/lb
Weight5g
Characteristic Values
VBRIA = 250µA, VGK = 0V1500V
VGK(th)IA = 250µA, VAK = VGK2.55.0V
VTIT = 1000A, VGK = 15V4.756.0V
rTIT > IL, VGK = 15V1.20
VBOVGK = 15V5.25V
IDVAK = 1500V, VGK = 0V15µA
IDTJ = 125°C1.5mA
IL250A
IH200A
IGKSVAK = 0V, VGK = ±30V±200nA
Ciks2825pF
CoksVAK = 25V, VGK = 0V, f = 1MHz164pF
Crks50pF
Qg(on)99nC
QgKIC = 40A, VGK = 15V, VAK = 600V22nC
Qga36nC
tri100ns
td50ns
tri100ns
td50ns
RthJC0.39°C/W
RthCS0.12°C/W
RthJA30°C/W

2504101957_Littelfuse-IXYS-MMJX1H40N150_C17680089.pdf

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