MOSFET MASPOWER MS66N85IDF4 Featuring Low Gate Charge and Avalanche Ruggedness for Power Conversion
Key Attributes
Model Number:
MS66N85IDF4
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
850V
Current - Continuous Drain(Id):
66A
Operating Temperature -:
-55℃~+150℃
RDS(on):
83mΩ@15V
Gate Threshold Voltage (Vgs(th)):
4.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
100pF
Number:
1 N-channel
Output Capacitance(Coss):
8.5nF
Input Capacitance(Ciss):
8.6nF
Pd - Power Dissipation:
1.566kW
Gate Charge(Qg):
220nC@10V
Mfr. Part #:
MS66N85IDF4
Package:
SOT-227
Product Description
Product Overview
The MS66N85IDB3/F4 H1.02 Maspower is a high-performance power MOSFET designed for various switching and power conversion applications. It features an international standard package, low on-resistance (RDS(ON) typ. = 70m @ IC = 10A), excellent avalanche ruggedness, low gate charge (QG), and very low on-resistance. This makes it suitable for switch-mode and resonant-mode applications, power supplies, DC-DC converters, PFC circuits, AC/DC motor drivers, and robotics/servo controls.
Product Attributes
- Brand: Maspower
- Model: MS66N85IDB3/F4 H1.02
- Package Options: TO-264, SOT-227
Technical Specifications
| Parameter | Symbol | Test Conditions | MS66N85IDB3 (TO-264) | MS66N85IDF4 (SOT-227) | Unit |
| Electrical Ratings | |||||
| Drain-source voltage (VGS = 0) | VDS | 850 | 850 | V | |
| Gate- source voltage | VGS | ±30 | ±30 | ||
| Drain current (continuous) at TC = 25 °C | ID | 66 | 66 | A | |
| Drain current (continuous) at TC = 100 °C | ID | 35 | 35 | A | |
| Drain current (pulsed Width Limited by TJM) | IDM | 140 | 140 | ||
| continuous pulse avalanche current | IAR | 33 | 33 | A | |
| Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) | EAS | 2500 | 2500 | mJ | |
| Total dissipation at TC = 25 °C | PTOT | 1250 | 1566 | W | |
| Operating junction temperature | TJ | -55 to 150 | -55 to 150 | °C | |
| Storage temperature | Tstg | -55 to 150 | -55 to 150 | °C | |
| Maximum lead temperature for soldering purpose | TL | 300 | 300 | °C | |
| Isolation Voltage for terminal to case | VISO | 3.0 | 3.0 | KV | |
| Electrical Characteristics (Tvj = 25°C unless otherwise specified) | |||||
| On /off states | |||||
| Drain-source breakdown voltage | V(BR)DSS | ID = 1 mA, VGS = 0 | 850 | 850 | V |
| Zero gate voltage drain current (VGS = 0) | IDSS | VDS = Max rating | 50 | 50 | µA |
| VDS=Max rating, TC=125 °C | 3000 | 3000 | |||
| Gate-body leakage current (VDS = 0) | IGSS | VGS = ± 30 V | ±100 | ±100 | nA |
| Gate threshold voltage | VGS(th) | VDS = VGS, ID = 250 µA | 3.0 - 3.8 - 4.6 | 3.0 - 3.8 - 4.6 | V |
| Static drain-source on resistance | RDS(on) | VGS = 15V, ID = 10A @25°C | 70 - 83 | 70 - 83 | mΩ |
| Dynamic | |||||
| Input capacitance | Ciss | VDS=25V,f=1MHz,VGS=0 | 8600 | 8600 | pF |
| Output capacitance | Coss | ||||
| Reverse transfer capacitance | Crss | ||||
| Gate input resistance | Rg | f=1MHz Gate DC Bias=0 Test signal level=20mV open drain | 1.0 | 1.0 | Ω |
| Forward Transconductance | Gfs | VDS=10V,ID=33A | 24 - 43 | 24 - 43 | S |
| Total gate charge | Qg | VDD=425V,ID=25A VGS=10V | 220 | 220 | nC |
| Gate-source charge | Qgs | ||||
| Gate-drain charge | Qgd | ||||
| Switching times | |||||
| Turn-on delay time | td(on) | VDD = 425 V, ID = 25A, RG = 10Ω, VGS = 10 V | 38 - 45 - 98 - 18 | 38 - 45 - 98 - 18 | ns |
| Rise time | tr | ||||
| Turn-off-delay time | td(off) | ||||
| Fall time | tf | ||||
| Source drain diode | |||||
| Forward on voltage | VSD | ISD= 1A, VGS= 0V | 0.66 - 1.2 | 0.66 - 1.2 | V |
| Reverse recovery time | trr | ISD= 33A, di/dt= 100A/µs VR= 100 V | 210 | 210 | ns |
| Reverse recovery charge | Qrr | 2.55 | 2.55 | µC | |
| Reverse recovery current | IRRM | 18 | 18 | A | |
| Thermal data | |||||
| Thermal resistance junction-case max | Rthj-case | 0.10 | 0.08 | °C/W | |
| Thermal resistance junction-ambient max | Rthj-amb | 40 | 35 | ||
2411220032_MASPOWER-MS66N85IDF4_C41417737.pdf
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