power MOSFET MASPOWER MS60N20HGT0 featuring 200V drain source voltage and 60A continuous drain current
Key Attributes
Model Number:
MS60N20HGT0
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
60A
RDS(on):
50mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.2V
Reverse Transfer Capacitance (Crss@Vds):
87pF
Output Capacitance(Coss):
416pF
Pd - Power Dissipation:
250W
Input Capacitance(Ciss):
2.7nF
Gate Charge(Qg):
70nC@15V
Mfr. Part #:
MS60N20HGT0
Package:
TO-220
Product Description
Product Overview
The MS60N20HGT0 H1.03 by Maspower is a high-performance N-channel MOSFET designed for demanding power applications. It features a high breakdown voltage of 200V and a continuous drain current of 60A, with improved dv/dt capability and fast switching characteristics. This device is 100% avalanche tested, making it suitable for power factor correction (PFC), switched-mode power supplies (SMPS), and uninterruptible power supplies (UPS).
Product Attributes
- Brand: Maspower
- Model: MS60N20HGT0 H1.03
Technical Specifications
| Parameter | Symbol | Limit/Value | Unit | Conditions |
| Absolute Ratings | ||||
| Drain-Source Voltage | VDSS | 200 | V | |
| Transient Gate-Source Voltage | VGSM | 30 | V | |
| Continuous Gate-Source Voltage | VGSS | 20 | V | |
| Drain Current-continuous | ID | 60 | A | TC=25 |
| 30 | A | TC=100 | ||
| Drain Current-pulse | IDM | 120 | A | |
| Single Pulsed Avalanche Energy | EAS | 879 | mJ | |
| Avalanche current | IAR | 26 | A | |
| Maximum Power Dissipation | PD | 250 | W | TC=25 |
| 2.0 | W/ | Derate above 25 | ||
| Peak diode recovery dv/dt | dv/dt | 9.5 | V/ns | |
| Operating and Storage Temperature Range | TJ,TSTG | -55~+150 | ||
| Electrical Characteristics | ||||
| Drain-Source Voltage | BVDSS | 200 | V | ID=250A,VGS=0V |
| Zero Gate Voltage Drain Current | IDSS | 10 | A | VDS=VDSS, VGS=0V, Tc=25 |
| 500 | A | VDS=VDSS, VGS=0V, Tc=125 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=20V,VDS=0V |
| Gate Threshold Voltage | VGS(th) | 2.4 - 4.0 | V | VDS=VGS,ID=250A |
| Static On-Resistance | RDS(ON) | - 63 | m | VGS=10V,ID=20A, |
| Transconductance | Gfs | - | S | VDS=10V,ID=20A, |
| Dynamic Characteristics | ||||
| Input capacitance | Ciss | - 2700 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output capacitance | Coss | - 416 | pF | |
| Reverse transfer capacitance | Crss | - 87 | pF | |
| Switching Characteristics | ||||
| Turn-On delay time | td(on) | - 22 | ns | VDS=100V,ID=60A, VGS=15V,RG=25 |
| Turn-On rise time | tr | - 102 | ns | |
| Turn-Off delay time | td(Off) | - 55 | ns | |
| Turn-Off rise time | tf | - 50 | ns | |
| Total Gate Charge | Qg | - 70 | nC | VDS=100V,ID=30A, VGS=15V,RG=25 |
| Gate-Source charge | Qgs | - 19 | nC | |
| Gate-Drain charge | Qgd | - 30 | nC | |
| Drain-Source Diode Characteristics | ||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | A | |
| Diode Forward Voltage | VSD | 0.86 - 1.5 | V | VGS=0V,IS=20A |
| Pulsed Source Current | IS | - 60 | A | |
| Reverse recovery time | Trr | - 150 | ns | IS=30A, dI/dT=100A/s, VGS=0V |
| Reverse recovery charge | Qrr | - 1.2 | C | |
| Thermal Characteristics | ||||
| Thermal Resistance,junction to Case,Max | Rth(j-C) | 0.50 | /W | |
| Thermal Resistance,junction to Ambient,Max | Rth(j-A) | 30 | /W | |
2508261540_MASPOWER-MS60N20HGT0_C50726509.pdf
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