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quality PNP Silicon Dual Bias Resistor Transistor LRC S-LMUN5114DW1T1G SC88 SOT363 Surface Mount Component factory
quality PNP Silicon Dual Bias Resistor Transistor LRC S-LMUN5114DW1T1G SC88 SOT363 Surface Mount Component factory

PNP Silicon Dual Bias Resistor Transistor LRC S-LMUN5114DW1T1G SC88 SOT363 Surface Mount Component

Key Attributes
Model Number: S-LMUN5114DW1T1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
13kΩ
Resistor Ratio:
0.21
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
S-LMUN5114DW1T1G
Package:
SOT-363
Product Description

Product Overview

The LMUN5111DW1T1G Series SC-88/SOT-363 Dual Bias Resistor Transistors are PNP Silicon Surface Mount Transistors featuring a monolithic bias resistor network. These devices integrate a single transistor with a base resistor and a base-emitter resistor, effectively replacing discrete components and their associated bias networks. This integration simplifies circuit design, reduces board space, and lowers component count, making them ideal for low-power surface mount applications where space is limited. The series is available in 8 mm, 7-inch/3000 unit tape and reel packaging.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Package Type: SC-88/SOT-363
  • Transistor Type: PNP Silicon
  • Mounting Type: Surface Mount
  • Certifications: AEC-Q101 Qualified, PPAP Capable (for S-Prefix series)
  • Compliance: RoHS requirements

Technical Specifications

Characteristic Symbol Model(s) Min Typ Max Unit Notes
Maximum Ratings
Collector-Base Voltage VCBO Common for Q1 and Q2 -50 Vdc TA = 25C
Collector-Emitter Voltage VCEO Common for Q1 and Q2 -50 Vdc TA = 25C
Collector Current IC Common for Q1 and Q2 -100 mAdc TA = 25C
Thermal Characteristics (One Junction Heated)
Total Device Dissipation PD 187 mW TA = 25C (Note 1)
Derate above 25C 1.5 mW/C (Note 1)
Thermal Resistance, Junction-to-Ambient RJA 670 C/W (Note 1)
Thermal Resistance, Junction-to-Ambient RJA 490 C/W (Note 2)
Thermal Characteristics (Both Junctions Heated)
Total Device Dissipation PD 250 mW TA = 25C (Note 1)
Derate above 25C 2.0 mW/C (Note 1)
Thermal Resistance, Junction-to-Ambient RJA 493 C/W (Note 1)
Thermal Resistance, Junction-to-Ambient RJA 325 C/W (Note 2)
Thermal Resistance, Junction-to-Lead RJL 188 C/W (Note 1)
Thermal Resistance, Junction-to-Lead RJL 208 C/W (Note 2)
Junction and Storage Temperature TJ, Tstg -55 +150 C
Electrical Characteristics
Collector-Base Cutoff Current ICBO Common for Q1 and Q2 -100 nAdc VCB = -50 V, IE = 0, TA = 25C
Collector-Emitter Cutoff Current ICEO Common for Q1 and Q2 -500 nAdc VCE = -50 V, IB = 0, TA = 25C
Emitter-Base Cutoff Current IEBO LMUN5111DW1T1G -0.5 mAdc VEB = -6.0 V, IC = 0, TA = 25C
Collector-Base Breakdown Voltage V(BR)CBO Common for Q1 and Q2 -50 Vdc IC = -10 A, IE = 0, TA = 25C
Collector-Emitter Breakdown Voltage V(BR)CEO Common for Q1 and Q2 -50 Vdc IC = -2.0 mA, IB = 0, TA = 25C (Note 3)
Collector-Emitter Saturation Voltage VCE(sat) LMUN5111DW1T1G -0.25 Vdc IC = -10 mA, IB = -0.3 mA, TA = 25C (Note 4)
DC Current Gain hFE LMUN5111DW1T1G 35 VCE = -10 V, IC = -5.0 mA, TA = 25C (Note 4)
Input Resistor R1 R1 LMUN5111DW1T1G 7.0 k
Resistor Ratio R1/R2 R1/R2 LMUN5111DW1T1G 0.8
Package Dimensions (SC-88/SOT-363) See page 19
Shipping Options LMUN5111DW1T1G Series 3000/Tape&Reel, 10000/Tape&Reel

Notes:

  • 1. FR-4 @ Minimum Pad
  • 2. FR-4 @ 1.0 x 1.0 inch Pad
  • 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
  • 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%

2410121839_LRC-S-LMUN5114DW1T1G_C22381725.pdf

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