P Channel Logic Enhancement Mode Power Transistor MATSUKI ME50P06-G Ideal for Low Voltage Applications
Key Attributes
Model Number:
ME50P06-G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
61A
Operating Temperature -:
-
RDS(on):
20mΩ@4.5V,14A
Gate Threshold Voltage (Vgs(th)):
-
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
336pF
Number:
1 P-Channel
Input Capacitance(Ciss):
4.707nF
Output Capacitance(Coss):
373pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
94nC@10V
Mfr. Part #:
ME50P06-G
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The ME50P06 is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits where low in-line power loss is crucial within a compact surface-mount package.
Product Attributes
- Brand: Matsuki Electric/ Force mos
- Product Variants: ME50P06 (Pb-free), ME50P06-G (Green product-Halogen free)
- Certifications: Pb-free, Halogen free
- Package Type: TO-252-3L
Technical Specifications
| Symbol | Parameter | Limit | Min | Typ | Max | Unit | Notes |
| VDS | Drain-Source Voltage | -60 | V | ||||
| VGS | Gate-Source Voltage | ±20 | V | ||||
| ID | Continuous Drain Current* TC=25 | -61 | A | *The device mounted on 1in2 FR4 board with 2 oz copper | |||
| ID | Continuous Drain Current* TC=70 | -49 | A | *The device mounted on 1in2 FR4 board with 2 oz copper | |||
| IDM | Pulsed Drain Current | -244 | A | ||||
| PD | Maximum Power Dissipation* TC=25 | 114 | W | *The device mounted on 1in2 FR4 board with 2 oz copper | |||
| PD | Maximum Power Dissipation* TC=70 | 73 | W | *The device mounted on 1in2 FR4 board with 2 oz copper | |||
| TJ | Operating Junction Temperature | -55 | 150 | ||||
| RJC | Thermal Resistance-Junction to Case* | 1.1 | /W | *The device mounted on 1in2 FR4 board with 2 oz copper | |||
| V(BR)DSS | Drain-Source Breakdown Voltage VGS=0V, ID=-250A | -60 | V | ||||
| VGS(th) | Gate Threshold Voltage VDS=VGS, ID=-250A | -1 | -3 | V | |||
| IGSS | Gate Leakage Current VDS=0V, VGS=±20V | ±100 | nA | ||||
| IDSS | Zero Gate Voltage Drain Current VDS=-60V, VGS=0V | -1 | μA | ||||
| RDS(ON) | Drain-Source On-State Resistance a VGS=-10V, ID= -17A | 14 | 17 | mΩ | a. Pulse test: pulse width≤ 300us, duty cycle≤ 2%, Guaranteed by design, not subject to production testing. | ||
| RDS(ON) | Drain-Source On-State Resistance a VGS=-4.5V, ID= -14A | 16 | 20 | mΩ | a. Pulse test: pulse width≤ 300us, duty cycle≤ 2%, Guaranteed by design, not subject to production testing. | ||
| VSD | Diode Forward Voltage IS=-17A, VGS=0V | -0.9 | -1.2 | V | |||
| Qg | Total Gate Charge(10V) VDS=-30V, VGS=-10V, ID=-50A | 94 | nC | ||||
| Qg | Total Gate Charge(4.5V) VDS=-30V, VGS=-4.5V, ID=-50A | 46 | nC | ||||
| Qgs | Gate-Source Charge | 18 | |||||
| Qgd | Gate-Drain Charge | 24 | |||||
| Ciss | Input capacitance VDS=-15V, VGS=0V, F=1MHz | 4707 | pF | ||||
| Coss | Output Capacitance | 373 | pF | ||||
| Crss | Reverse Transfer Capacitance | 336 | pF | ||||
| td(on) | Turn-On Delay Time VDS=-30V, RL =30Ω VGEN=-10V, RG=6Ω | 53 | ns | ||||
| tr | Turn-On Rise Time | 19 | ns | ||||
| td(off) | Turn-Off Delay Time | 221 | ns | ||||
| tf | Turn-Off Fall Time | 61 | ns |
2410121449_MATSUKI-ME50P06-G_C165230.pdf
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