transistor MATSUKI ME2306A-G featuring SOT 23 package and DMOS trench technology for portable devices
Key Attributes
Model Number:
ME2306A-G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.38A
Operating Temperature -:
-55℃~+150℃
RDS(on):
50mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 N-channel
Output Capacitance(Coss):
70pF
Input Capacitance(Ciss):
480pF
Pd - Power Dissipation:
1.39W
Gate Charge(Qg):
15.5nC@10V
Mfr. Part #:
ME2306A-G
Package:
SOT-23
Product Description
Product Overview
The ME2306A is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as cellular phones, notebook computer power management, and other battery-powered circuits. Its low in-line power loss is particularly beneficial in very small outline surface mount packages.
Product Attributes
- Brand: ME
- Model: ME2306A / ME2306A-G
- Certification: Pb-free (ME2306A), Green product-Halogen free (ME2306A-G)
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | ME2306A/ME2306A-G | Unit |
| Maximum Ratings | |||
| Drain-Source Voltage | VDS | 30 | V |
| Gate-Source Voltage | VGS | ±12 | V |
| Continuous Drain Current (TA=25) | ID | 5.38 | A |
| Continuous Drain Current (TA=70) | ID | 4.30 | A |
| Pulsed Drain Current | IDM | 21.5 | A |
| Maximum Power Dissipation (TA=25) | PD | 1.39 | W |
| Maximum Power Dissipation (TA=70) | PD | 0.89 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |
| Thermal Resistance-Junction to Ambient* | RθJA | 90 | /W |
| Static Parameters | |||
| Drain-Source Breakdown Voltage (VGS=0V, ID=250μA) | V(BR)DSS | 30 | V |
| Gate Threshold Voltage (VDS=VGS, ID=250μA) | VGS(th) | 0.7 - 1.4 | V |
| Gate-Body Leakage Current (VDS=0V, VGS=±12V) | IGSS | ±100 | nA |
| Zero Gate Voltage Drain Current (VDS=30V, VGS=0V) | IDSS | 1 | μA |
| Drain-Source On-Resistance (VGS=10V, ID=4A) | RDS(ON) | 27 - 34.5 | mΩ |
| Drain-Source On-Resistance (VGS=4.5V, ID=3.5A) | RDS(ON) | 29 - 38 | mΩ |
| Drain-Source On-Resistance (VGS=2.5V, ID=2.8A) | RDS(ON) | 39 - 50 | mΩ |
| Diode Forward Voltage (IS=1.25A, VGS=0V) | VSD | 0.8 - 1.2 | V |
| Dynamic Parameters | |||
| Total Gate Charge (VDS=15V, VGS=10V, ID=4A) | Qg | 15.5 | nC |
| Gate-Source Charge | Qgs | 3.2 | nC |
| Gate-Drain Charge | Qgd | 3.5 | nC |
| Gate Resistance (f =1MHz) | Rg | 0.7 | Ω |
| Input Capacitance (VDS=15V, VGS=0V, f=1MHZ) | Ciss | 480 | pF |
| Output Capacitance | Coss | 70 | pF |
| Reverse Transfer Capacitance | Crss | 18 | pF |
| Turn-On Delay Time (VDD=15V, RL =15Ω, ID=1A, VGEN=10V, RG=6Ω) | td(on) | 8.5 | ns |
| Rise Time | tr | 17 | ns |
| Turn-Off Delay Time | td(off) | 31 | ns |
| Fall Time | tf | 21 | ns |
2410121457_MATSUKI-ME2306A-G_C3647148.pdf
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