General purpose PNP transistor LRC S-LMBT4403WT1G with 5 V emitter base voltage and tape packaging
Key Attributes
Model Number:
S-LMBT4403WT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
200MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LMBT4403WT1G
Package:
SC-70
Product Description
Product Overview
The LMBT4403WT1G is a general-purpose PNP silicon transistor from LESHAN RADIO COMPANY, LTD. It is designed for various electronic applications and is available in Tape & Reel packaging.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Device Marking: LMBT4403WT1G
- Compliance: RoHS requirements, AEC-Q101 Qualified, PPAP Capable
- Package: SC-70 (SOT-323)
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Characteristic | Symbol | Min | Max | Unit | Conditions |
| MAXIMUM RATINGS | |||||
| CollectorEmitter Voltage | V CEO | 40 | Vdc | ||
| CollectorBase Voltage | V CBO | 40 | Vdc | ||
| EmitterBase Voltage | V EBO | 5.0 | Vdc | ||
| Collector Current Continuous | I C | 600 | mAdc | ||
| Total Device Dissipation | PD | 150 | mW | FR5 Board, T A = 25C | |
| Junction and Storage Temperature | TJ, Tstg | 55 | +150 | C | |
| OFF CHARACTERISTICS | |||||
| CollectorEmitter Breakdown Voltage | V (BR)CEO | 40 | Vdc | I C = 1.0 mAdc, I B = 0 | |
| CollectorBase Breakdown Voltage | V (BR)CBO | 40 | Vdc | I C = 0.1mAdc, I E = 0 | |
| EmitterBase Breakdown Voltage | V (BR)EBO | 5.0 | Vdc | I E = 0.1mAdc, I C = 0 | |
| Base Cutoff Current | I BEV | 0.1 | Adc | V CE = 35 Vdc, V EB = 0.4 Vdc | |
| Collector Cutoff Current | I CEX | 0.1 | Adc | V CE = 35 Vdc, V EB = 0.4 Vdc | |
| ON CHARACTERISTICS | |||||
| DC Current Gain | hFE | 30 | I C = 0.1 mAdc, V CE = 1.0 Vdc | ||
| DC Current Gain | hFE | 60 | I C = 1.0 mAdc, V CE = 1.0 Vdc | ||
| DC Current Gain | hFE | 100 | I C = 10 mAdc, V CE = 1.0 Vdc | ||
| DC Current Gain | hFE | 100 | 300 | I C = 150 mAdc, V CE = 2.0 Vdc | |
| DC Current Gain | hFE | 20 | I C = 500 mAdc, V CE = 2.0 Vdc | ||
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.4 | Vdc | I C = 150mAdc, I B = 15 mAdc | |
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.75 | Vdc | I C = 500 mAdc, I B = 50 mAdc | |
| BaseEmitter Saturation Voltage | V BE(sat) | 0.75 | 0.95 | Vdc | I C = 150 mAdc, I B = 15 mAdc |
| BaseEmitter Saturation Voltage | V BE(sat) | 1.3 | Vdc | I C = 500 mAdc, I B = 50 mAdc | |
| SMALLSIGNAL CHARACTERISTICS | |||||
| CurrentGain Bandwidth Product | f T | 200 | MHz | I C = 20mAdc, V CE= 10 Vdc, f = 100 MHz | |
| CollectorBase Capacitance | C cb | 8.5 | pF | V CB= 10 Vdc, I E = 0, f = 1.0 MHz | |
| EmitterBase Capacitance | C eb | 30 | pF | V BE = 0.5 Vdc, I C = 0, f = 1.0 MHz | |
| Input Impedance | h ie | 1.5 | 15 | k | V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz |
| Voltage Feedback Ratio | h re | 0.1 | 8.0 | X 10 4 | V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz |
| SmallSignal Current Gain | h fe | 60 | 500 | V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz | |
| Output Admittance | h oe | 1.0 | 100 | mhos | V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz |
| SWITCHING CHARACTERISTICS | |||||
| Delay Time | t d | 15 | ns | V CC = 30 Vdc, V EB = 2.0 Vdc, I C = 150mAdc, I B1 = 15 mAdc | |
| Rise Time | t r | 20 | ns | V CC = 30 Vdc, V EB = 2.0 Vdc, I C = 150mAdc, I B1 = 15 mAdc | |
| Storage Time | t s | 225 | ns | V CC = 30 Vdc, I C = 150 mAdc, I B1 = I B2 = 15 mAdc | |
| Fall Time | t f | 30 | ns | V CC = 30 Vdc, I C = 150 mAdc, I B1 = I B2 = 15 mAdc | |
2311271010_LRC-S-LMBT4403WT1G_C19193855.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
