Low Voltage Power MOSFET MATSUKI ME15N25-G Featuring DMOS Trench Technology and Green Product Status
Key Attributes
Model Number:
ME15N25-G
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
17.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
265mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
51pF
Number:
1 N-channel
Output Capacitance(Coss):
112pF
Pd - Power Dissipation:
125W
Input Capacitance(Ciss):
3.48nF
Gate Charge(Qg):
70.8nC@10V
Mfr. Part #:
ME15N25-G
Package:
TO-252-3L
Product Description
Product Overview
The ME15N25 is an N-Channel logic enhancement mode power field-effect transistor manufactured using high cell density, DMOS trench technology. This technology is optimized for minimal on-state resistance, making these devices ideal for low-voltage applications. Key advantages include extremely low RDS(ON) and exceptional DC current capability.
Product Attributes
- Brand: Matsuki Electric/ Force mos
- Product Variants: ME15N25 (Pb-free), ME15N25-G (Green product-Halogen free)
- Certifications: Pb-free, Halogen free
Technical Specifications
| Parameter | Symbol | ME15N25/ME15N25-G | Unit | Notes |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDS | 250 | V | |
| Gate-Source Voltage | VGS | 25 | V | |
| Continuous Drain Current (TC=25) | ID | 17.1 | A | |
| Continuous Drain Current (TC=70) | ID | 13.7 | A | |
| Pulsed Drain Current | IDM | 68.6 | A | |
| Maximum Power Dissipation (TC=25) | PD | 125 | W | |
| Maximum Power Dissipation (TC=70) | PD | 80 | W | |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | ||
| Thermal Resistance-Junction to Case* | RJC | 1 | /W | *The device mounted on 1in2 FR4 board with 2 oz copper |
| Static Characteristics | ||||
| Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | V(BR)DSS | 250 | V | |
| Gate Threshold Voltage (VDS=VGS, ID=250A) | VGS(th) | 2 - 4 | V | |
| Gate Leakage Current (VDS=0V, VGS=25V) | IGSS | 100 | nA | |
| Zero Gate Voltage Drain Current (VDS=200V, VGS=0V) | IDSS | 1 | A | |
| Drain-Source On-State Resistance (VGS=10V, ID= 7A) | RDS(ON) | 220 - 265 | m | a. Pulse test: pulse width 300us, duty cycle 2%, Guaranteed by design, not subject to production testing. |
| Diode Forward Voltage (IS=1A, VGS=0V) | VSD | 0.74 - 1 | V | |
| Dynamic Characteristics | ||||
| Total Gate Charge (VDS=200V, VGS=10V, ID=14A) | Qg | 70.8 | nC | |
| Gate-Source Charge | Qgs | 16.2 | nC | |
| Gate-Drain Charge | Qgd | 23.9 | nC | |
| Input Capacitance (VDS=25V, VGS=0V, f=1MHz) | Ciss | 3480 | pF | |
| Output Capacitance | Coss | 112 | pF | |
| Reverse Transfer Capacitance | Crss | 51 | pF | |
| Gate Resistance (VDS=0V, VGS=0V, f=1MHz) | Rg | 2.3 | ||
| Turn-On Delay Time (VDS=125V, RL =18, VGEN=10V, RG=25) | td(on) | 53 | ns | |
| Turn-On Rise Time | tr | 62.6 | ns | |
| Turn-Off Delay Time | td(off) | 198 | ns | |
| Turn-Off Fall Time | tf | 83.5 | ns | |
2410121657_MATSUKI-ME15N25-G_C3647146.pdf
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