Surface Mount Dual NPN Small Signal Transistor LRC S-LMBT5551DW1T1G SOT363 Package Electronic Part
Key Attributes
Model Number:
S-LMBT5551DW1T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50uA
Pd - Power Dissipation:
225mW
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LMBT5551DW1T1G
Package:
SC-88
Product Description
LMBT5551DW1T1G Dual NPN Small Signal Surface Mount Transistor
The LMBT5551DW1T1G is a dual NPN small signal surface mount transistor designed for general purpose applications. It offers reliable performance in a compact SOT-363/SC-88 package, suitable for various electronic circuits.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Device Marking: G1
- Package: SOT-363/SC-88
- RoHS Compliance: Yes
- AEC-Q101 Qualified: Yes (with S- prefix)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Notes |
| MAXIMUM RATINGS | ||||
| CollectorEmitter Voltage | V CEO | 140 | Vdc | |
| CollectorBase Voltage | V CBO | 160 | Vdc | |
| EmitterBase Voltage | V EBO | 6.0 | Vdc | |
| Collector Current Continuous | I C | 600 | mAdc | |
| Total Device Dissipation (FR 5 Board) | PD | 225 | mW | TA = 25C, Derate above 25C 1.8 mW/C |
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | TA= 25C, Derate above 25C 2.4 mW/C |
| Junction and Storage Temperature | TJ , Tstg | 55 to +150 | C | |
| ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) | ||||
| CollectorEmitter Breakdown Voltage | (BR)CEO | 160 | Vdc | (I C = 1.0 mAdc, I B = 0) |
| CollectorBase Breakdown Voltage | (BR)CBO | 180 | Vdc | (I C= 100 Adc, I E = 0) |
| EmitterBase Breakdown Voltage | (BR)EBO | 6.0 | Vdc | (I E= 10 Adc, I C = 0) |
| Collector Cutoff Current | I CBO | 50 nAdc | ( V CB = 120Vdc, I E = 0) | |
| Collector Cutoff Current | I CBO | 50 Adc | ( V CB = 120Vdc, I E = 0, T A=100 C) | |
| Emitter Cutoff Current | I EBO | 50 nAdc | ( V BE = 4.0Vdc, I C= 0) | |
| DC Current Gain | hFE | 80 | (I C = 1.0 mAdc, V CE = 5.0 Vdc) | |
| DC Current Gain | hFE | 80 250 | (I C = 10 mAdc, V CE = 5.0 Vdc) | |
| DC Current Gain | hFE | 30 | (I C = 50 mAdc, V CE = 5.0Vdc) | |
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.15 | Vdc | (I C = 10 mAdc, I B = 1.0 mAdc) |
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.20 | Vdc | (I C = 50 mAdc, I B = 5.0 mAdc ) |
| BaseEmitter Saturation Voltage | V BE(sat) | 1.0 | Vdc | (I C = 10 mAdc, I B = 1.0 mAdc) |
| BaseEmitter Saturation Voltage | V BE(sat) | 1.0 | Vdc | (I C = 50 mAdc, I B = 5.0 mAdc) |
2303141000_LRC-S-LMBT5551DW1T1G_C2936696.pdf
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