PNP Silicon Transistor LRC LBC807-40WT1G RoHS Compliant Halogen Free SC70 Package for General Purpose
Key Attributes
Model Number:
LBC807-40WT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC807-40WT1G
Package:
SC-70
Product Description
Product Overview
The LBC807-40WT1G and S-LBC807-40WT1G are PNP Silicon General Purpose Transistors from Leshan Radio Company, LTD. Designed for automotive and other applications requiring unique site and control change requirements, the S-prefix variant is AEC-Q101 qualified and PPAP capable. These transistors comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified and PPAP capable (S-prefix variant)
- Package: SC70(SOT-323)
Technical Specifications
| Parameter | Symbol | Limits | Unit | Notes |
| CollectorEmitter Voltage | VCEO | -45 | V | |
| CollectorBase Voltage | VCBO | -50 | V | |
| EmitterBase Voltage | VEBO | -5 | V | |
| Collector Current(Continuous) | IC | -500 | mA | |
| Total Device Dissipation (FR5 Board) | PD | 150 | mW | TA = 25C, Derate above 25C 1.2 mW/C |
| Thermal Resistance, Junction to Ambient (FR5 Board) | RJA | 833 | C/W | |
| Total Device Dissipation (Alumina Substrate) | PD | 200 | mW | TA = 25C, Derate above 25C 1.6 mW/C |
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | RJA | 625 | C/W | 0.4 x 0.3 x 0.024 in. 99.5% alumina. |
| Junction and Storage Temperature | TJ,Tstg | -55~+150 | C | |
| CollectorEmitter Breakdown Voltage | V(BR)CEO | -45 | V | (IC = -10 mA) |
| CollectorEmitter Breakdown Voltage | V(BR)CES | -50 | V | (IC = -10 A, VEB = 0) |
| EmitterBase Breakdown Voltage | V(BR)EBO | -5 | V | (IE = -1.0 A) |
| Collector Cutoff Current | ICBO | -5 | A | (VCB = -20 V) |
| Collector Cutoff Current | ICBO | -10 | nA | (VCB = -20 V, TA= 150C) |
| DC Current Gain | hFE | 250 | (IC = 100 mA, VCE = 1.0 V) | |
| DC Current Gain | hFE | 600 | (IC = 500 mA, VCE = 1.0 V) | |
| CollectorEmitter Saturation Voltage | VCE(sat) | -0.7 | V | (IC = 500 mA, IB = 50 mA) |
| BaseEmitter Voltage | VBE(on) | -1.2 | V | (IC = 500 mA, VCE = 1.0 V) |
| CurrentGain Bandwidth Product | fT | 100 | MHz | (IC = -10 mA, VCE = -5.0 V, f = 100 MHz) |
| Output Capacitance | Cobo | 10 | pF | (VCB = -10 V, f = 1.0 MHz) |
Ordering Information
| Device Marking | Shipping | Quantity | Part Number | S-Part Number |
| YL | 3000/Tape&Reel | 3000 | LBC807-40WT1G | S-LBC807-40WT1G |
| YL | 10000/Tape&Reel | 10000 | LBC807-40WT3G |
2410010403_LRC-LBC807-40WT1G_C417309.pdf
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