High Current N Channel MOSFET ME120N10T with Excellent Thermal Performance and Low Conduction Losses
Key Attributes
Model Number:
ME120N10T
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5mΩ@10V,90A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
631pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
7.889nF@25V
Pd - Power Dissipation:
-
Gate Charge(Qg):
180nC@10V
Mfr. Part #:
ME120N10T
Package:
TO-220
Product Description
Product Overview
The ME120N10T is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced process is engineered to minimize on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is suitable for applications requiring high performance and efficiency.
Product Attributes
- Brand: Matsuki (implied by datasheet content)
- Product Variants: ME120N10T (Pb-free), ME120N10T-G (Green product-Halogen free)
- Certifications: Pb-free, Green product-Halogen free
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| Drain-Source Voltage | VDSS | 100 | V | |
| Gate-Source Voltage | VGSS | ±25 | V | |
| Continuous Drain Current | ID | 180 (TC=25), 132 (TC=100) | A | *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 180A. |
| Pulsed Drain Current | IDM | 640 | A | |
| Maximum Power Dissipation | PD | 250 (TC=25), 125 (TC=100) | W | |
| Operating Junction Temperature | TJ | -55 to 175 | ||
| Thermal Resistance-Junction to Case | RJC | 0.6 | /W | ** The device mounted on 1in2 FR4 board with 2 oz copper. |
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250A |
| Gate Threshold Voltage | VGS(th) | 2 - 4 | V | VDS=VGS, ID=250A |
| Gate Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±25V |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V, VGS=0V |
| Drain-Source On-Resistance | RDS(ON) | 5.0 - 6.5 | mΩ | VGS=10V, ID=90A, a |
| Diode Forward Voltage | VSD | 0.8 - 1.0 | V | IS=90A, VGS=0V |
| Total Gate Charge | Qg | 34 | nC | VDS=80V, VGS=10V, ID=90A |
| Gate-Source Charge | Qgs | 788 | nC | |
| Gate-Drain Charge | Qgd | 1013 | nC | |
| Input Capacitance | Ciss | 631 | pF | VDS=25V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 180 | pF | VDS=25V, VGS=0V, f=1MHz |
| Reverse Transfer Capacitance | Crss | 3 | pF | VDS=25V, VGS=0V, f=1MHz |
| Gate Resistance | Rg | 2.3 | Ω | VDS=0V, VGS=0V, f=1MHz |
| Turn-On Delay Time | td(on) | 28 | ns | VDD=50V, RG=6Ω, VGS=10V, IDS=50A |
| Turn-On Rise Time | tr | 45 | ns | VDD=50V, RG=6Ω, VGS=10V, IDS=50A |
| Turn-Off Delay Time | td(off) | 85 | ns | VDD=50V, RG=6Ω, VGS=10V, IDS=50A |
| Turn-Off Fall Time | tf | 50 | ns | VDD=50V, RG=6Ω, VGS=10V, IDS=50A |
2411220137_MATSUKI-ME120N10T_C709729.pdf
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