30V P Channel MOSFET LRC LP3401LT1G Featuring Advanced Trench Technology and Ultra Low On Resistance
Key Attributes
Model Number:
LP3401LT1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 P-Channel
Input Capacitance(Ciss):
954pF@15V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
9.4nC@4.5V
Mfr. Part #:
LP3401LT1G
Package:
SOT-23
Product Description
Product Overview
The LP3401LT1G is a 30V P-Channel Enhancement-Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. This device is compliant with RoHS requirements and Halogen Free. It is designed for various applications requiring efficient power switching and low conduction losses.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material Compliance: RoHS, Halogen Free
- Technology: Advanced trench process
- Cell Design: High Density for Ultra Low On-Resistance
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| DraintoSource Voltage | VDSS | -30 | V | |||
| GatetoSource Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | -4.2 | A | TA = 25C | ||
| Continuous Drain Current | ID | -3.5 | A | TA = 75C | ||
| Pulsed Drain Current | IDM | -30 | A | t 10s | ||
| Maximum Power Dissipation | PD | 1.4 | W | TA = 25C | ||
| Maximum Power Dissipation | PD | 1.00 | W | TA = 75C | ||
| Junction and Storage Temperature Range | TJ, Tstg | 55 | +150 | C | ||
| Maximum Junction-to-Ambient Thermal Resistance | RJA | 65 | 90 | C/W | Steady-State | |
| Maximum Junction-to-Ambient Thermal Resistance | RJA | 85 | 125 | C/W | Steady-State | |
| Maximum Junction-to-Lead Thermal Resistance | RJL | 43 | 60 | C/W | Steady-State | |
| Zero Gate Voltage Drain Current | IDSS | -5 | A | VDS=-24V, VGS=0V | ||
| Gate-Body leakage current | IGSS | 100 | nA | VDS=0V, VGS=12V | ||
| Gate Threshold Voltage | VGS(th) | -0.7 | -1 | -1.3 | V | VDS=VGS, ID=-250A |
| On state drain current | ID(ON) | -25 | A | VGS=-2.5V, ID=-1A | ||
| Static Drain-Source On- Resistance | RDS(ON) | 70 | m | VGS=-10V, ID=-4.2A | ||
| Static Drain-Source On- Resistance | RDS(ON) | 80 | m | VGS=-4.5V, ID=-4A | ||
| Static Drain-Source On- Resistance | RDS(ON) | 120 | m | VGS=-2.5V, ID=-1A | ||
| Forward Transconductance | gFS | 7 | 11 | S | VDS=-5V, ID=-5A | |
| Diode Forward Voltage | VSD | -0.75 | -1 | V | IS=-1A,VGS=0V | |
| Maximum Body-Diode Continuous Current | IS | -2.2 | D | A | ||
| Input Capacitance | Ciss | 954 | pF | VGS=0V, VDS=-15V, f=1MHz | ||
| Output Capacitance | Coss | 115 | pF | VGS=0V, VDS=0V, f=1MHz | ||
| Reverse Transfer Capacitance | Crss | 77 | pF | |||
| Gate resistance | Rg | 6 | ||||
| Total Gate Charge | QG | 9.4 | nC | VGS=-4.5V, VDS=-15V, ID=-4.5A | ||
| GatetoSource Gate Charge | QGS | 2 | nC | |||
| GatetoDrain Charge | QGD | 3 | nC | |||
| TurnOn Delay Time | td(on) | 6.3 | ns | VGS=-10V, VDS=-15V, RL=3.6, R GEN=6 | ||
| Rise Time | tr | 3.2 | ns | |||
| TurnOff Delay Time | td(off) | 38.2 | ns | |||
| Fall Time | tf | 12 | ns | |||
| Body Diode Reverse Recovery Time | trr | 20.2 | ns | IF=-4A, dI/dt=100A/s | ||
| Body Diode Reverse Recovery Charge | Qrr | 11.2 | nC | IF=-4A, dI/dt=100A/s |
| Device Marking | Ordering Information | Package | Shipping |
|---|---|---|---|
| LP3401LT1G A1 | LP3401LT1G | SOT23 (TO236AB) | 3000/Tape&Reel |
| 10000/Tape&Reel |
1809051312_LRC-LP3401LT1G_C81618.pdf
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