High Voltage PNP Silicon Transistor MCC MMBTA92-TP RoHS Compliant Lead Free Halogen Free for Electronics
Key Attributes
Model Number:
MMBTA92-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
250nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
50MHz
Type:
PNP
Current - Collector(Ic):
300mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBTA92-TP
Package:
SOT-23
Product Description
Product Overview
The MMBTA92 is a PNP Silicon High Voltage Transistor from MCCSEMI.COM, designed for high voltage applications. It features a halogen-free, lead-free, and RoHS-compliant design, making it an environmentally conscious choice. This transistor is suitable for various electronic circuits requiring high voltage handling capabilities.
Product Attributes
- Brand: MCCSEMI.COM
- Type: PNP Silicon High Voltage Transistor
- Certifications: Halogen Free, "Green" Device, Lead Free Finish/RoHS Compliant
- Flammability Rating: Epoxy Meets UL 94 V-0
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| Power Dissipation (Note 2) | PD | 225 | mW | Junction to Ambient |
| Power Dissipation (Note 3) | PD | 300 | mW | Junction to Ambient |
| Operating Junction Temperature Range | -55 to +150 | |||
| Storage Temperature Range | -55 to +150 | |||
| Thermal Resistance (Note 2) | 556 | /W | Junction to Ambient | |
| Thermal Resistance (Note 3) | 417 | /W | Junction to Ambient | |
| Collector-Base Voltage | VCBO | -300 | V | |
| Collector-Emitter Voltage | VCEO | -300 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Continuous Collector Current | IC | -300 | mA | |
| Peak Collector Current | ICM | -500 | mA | |
| Collector Cutoff Current | ICBO | -0.25 | A | VCB=-200V, IE=0 |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.9 | V | IC=-20mA, IB=-2mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.2 | V | IC=-10mA, IB=-2mA |
| DC Current Gain | hFE | 60 | VCE=-10V, IC=-30mA | |
| DC Current Gain | hFE | 60 | VCE=-10V, IC=-1mA | |
| DC Current Gain | hFE | 100 | IC=-1mA, IB=0 | |
| DC Current Gain | hFE | 200 | IC=-30mA, IB=-2mA | |
| Collector Output Capacitance | Ccb | 6 | pF | VCB=-20V, IE=0,f=1MHz |
| Collector-Base Breakdown Voltage | V(BR)CBO | -300 | V | IC=-100A, IE=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE=-100A, IC=0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -300 | V | VEB=-5V, IC=0 |
| Transition Frequency | fT | 50 | MHz | VCE=-20V, IC=-10mA, f=30MHz |
| Emitter Cutoff Current | IEBO | -0.1 | A | VCB=-20V, IE=0,f=1MHz |
2411200001_MCC-MMBTA92-TP_C914343.pdf
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