P Channel Power MOSFET with 44 Percent Smaller Footprint and Low Threshold Voltage LRC LNTK3043PT5G
Key Attributes
Model Number:
LNTK3043PT5G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
285mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.5Ω@4.5V,285mA
Gate Threshold Voltage (Vgs(th)):
1.3V
Reverse Transfer Capacitance (Crss@Vds):
2.7pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
11pF@10V
Pd - Power Dissipation:
440mW
Gate Charge(Qg):
-
Mfr. Part #:
LNTK3043PT5G
Package:
SOT-723
Product Description
Product Overview
The LNTK3043PT5G is a P-Channel Power MOSFET from LESHAN RADIO COMPANY, LTD., featuring 20 V, 285 mA ratings and ESD protection. Designed for high-density PCB manufacturing, it offers a 44% smaller footprint and 38% thinner profile than SC-89 packages. Its low voltage drive and low threshold levels (VGS(TH) < 1.3 V) make it ideal for portable equipment and applications requiring standard logic-level gate drive. This Pb-Free device is suitable for interfacing, switching, and high-speed switching applications, particularly in cellular phones and PDAs.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Model: LNTK3043PT5G
- Package: SOT723 (CASE 631AA)
- Lead Finish: PbFree
- Device Type: P-Channel Power MOSFET with ESD Protection
- Automotive Option: S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Notes |
|---|---|---|---|---|---|---|
| DraintoSource Breakdown Voltage | V(BR)DSS | 20 | V | VGS = 0 V, ID = 100 A | ||
| DraintoSource Breakdown Voltage Temperature Coefficient | V(BR)DSS/TJ | 27 | mV/C | ID = 100 A, Reference to 25C | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VGS = 0 V, VDS = 16 V, TJ = 25C | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | A | VGS = 0 V, VDS = 16 V, TJ = 125C | ||
| GatetoSource Leakage Current | IGSS | 1 | A | VDS = 0 V, VGS = 5 V | ||
| Gate Threshold Voltage | VGS(TH) | 0.4 | 1.3 | V | VGS = VDS, ID = 250 A | |
| Gate Threshold Voltage Temperature Coefficient | VGS(TH)/TJ | 2.4 | mV/C | |||
| DraintoSource On Resistance | RDS(ON) | 1.5 | 3.4 | VGS = 4.5V, ID = 10 mA | ||
| DraintoSource On Resistance | RDS(ON) | 1.6 | 3.8 | VGS = 4.5V, ID = 255 mA | ||
| DraintoSource On Resistance | RDS(ON) | 2.4 | 4.5 | VGS = 2.5 V, ID = 1 mA | ||
| DraintoSource On Resistance | RDS(ON) | 5.1 | 10 | VGS = 1.8 V, ID = 1 mA | ||
| DraintoSource On Resistance | RDS(ON) | 6.8 | 15 | VGS = 1.65 V, ID = 1 mA | ||
| Forward Transconductance | gFS | 0.275 | S | VDS = 5 V, ID = 100 mA | ||
| Input Capacitance | CISS | 11 | pF | VGS = 0 V, f = 1 MHz, VDS = 10 V | ||
| Output Capacitance | COSS | 8.3 | pF | VGS = 0 V, f = 1 MHz, VDS = 10 V | ||
| Reverse Transfer Capacitance | CRSS | 2.7 | pF | VGS = 0 V, f = 1 MHz, VDS = 10 V | ||
| TurnOn Delay Time | td(ON) | 13 | ns | VGS= 4.5 V, VDD = 5 V, ID = 10 mA, RG = 6 | ||
| Rise Time | tr | 15 | ns | VGS= 4.5 V, VDD = 5 V, ID = 10 mA, RG = 6 | ||
| TurnOff Delay Time | td(OFF) | 94 | ns | VGS= 4.5 V, VDD = 5 V, ID = 10 mA, RG = 6 | ||
| Fall Time | tf | 55 | ns | VGS= 4.5 V, VDD = 5 V, ID = 10 mA, RG = 6 | ||
| Forward Diode Voltage | VSD | 0.83 | 1.2 | V | VGS = 0 V, IS= 286 mA, TJ = 25C | |
| Forward Diode Voltage | VSD | 0.69 | V | VGS = 0 V, IS= 286 mA, TJ = 125C | ||
| Reverse Recovery Time | tRR | 9.1 | ns | VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/s, IS = 286 mA | ||
| Charge Time | ta | 7.1 | ns | VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/s, IS = 286 mA | ||
| Discharge Time | tb | 2.0 | ns | VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/s, IS = 286 mA | ||
| Reverse Recovery Charge | QRR | 3.7 | nC | VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/s, IS = 286 mA | ||
| Continuous Drain Current (Note 1) | ID | 255 | mA | Steady State, TA = 25C | ||
| Continuous Drain Current (Note 1) | ID | 185 | mA | Steady State, TA = 85C | ||
| Power Dissipation (Note 1) | PD | 440 | mW | Steady State, TA = 25C | ||
| Continuous Drain Current (Note 2) | ID | 210 | mA | Steady State, TA = 25C | ||
| Continuous Drain Current (Note 2) | ID | 155 | mA | Steady State, TA = 85C | ||
| Power Dissipation (Note 2) | PD | 310 | mW | TA = 25C | ||
| Pulsed Drain Current | IDM | 400 | mA | tp = 10 s | ||
| Operating Junction and Storage Temperature | TJ, TSTG | 55 | 150 | C | ||
| Source Current (Body Diode) (Note 2) | IS | 286 | mA | |||
| Lead Temperature for Soldering Purposes | TL | 260 | C | (1/8 from case for 10 seconds) | ||
| JunctiontoAmbient Steady State (Note 3) | R JA | 280 | C/W | |||
| JunctiontoAmbient t = 5 s (Note 3) | R JA | 228 | C/W | |||
| JunctiontoAmbient Steady State Minimum Pad (Note 4) | R JA | 400 | C/W | |||
| Dimensions (SOT-723) | MIN | NOM | MAX | MILLIMETERS / INCHES | ||
| A | 0.45 / 0.018 | 0.50 / 0.020 | 0.55 / 0.022 | mm / in | ||
| b | 0.15 / 0.0059 | 0.21 / 0.0083 | 0.27 / 0.0106 | mm / in | ||
| b1 | 0.25 / 0.010 | 0.31 / 0.012 | 0.37 / 0.015 | mm / in | ||
| C | 0.07 / 0.0028 | 0.12 / 0.0047 | 0.17 / 0.0067 | mm / in | ||
| D | 1.15 / 0.045 | 1.20 / 0.047 | 1.25 / 0.049 | mm / in | ||
| E | 0.75 / 0.030 | 0.80 / 0.032 | 0.85 / 0.034 | mm / in | ||
| e | 0.40 BSC / 0.016 BSC | mm / in | ||||
| H | 1.15 / 0.045 | 1.20 / 0.047 | 1.25 / 0.049 | mm / in | ||
| L | 0.15 / 0.0059 | 0.20 / 0.0079 | 0.25 / 0.0098 | mm / in |
Ordering Information:
- LNTK3043PT5G: 8000 / Tape & Reel
- S-LNTK3043PT5G: 8000 / Tape & Reel (Automotive)
2008171534_LRC-LNTK3043PT5G_C723986.pdf
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