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quality Power Management N Channel MOSFET LRC L2N7002FLT1G Featuring Low On Resistance and High DC Current factory
quality Power Management N Channel MOSFET LRC L2N7002FLT1G Featuring Low On Resistance and High DC Current factory

Power Management N Channel MOSFET LRC L2N7002FLT1G Featuring Low On Resistance and High DC Current

Key Attributes
Model Number: L2N7002FLT1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-
RDS(on):
13Ω@2.5V,1mA
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF
Number:
1 N-channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
21pF
Pd - Power Dissipation:
225mW;300mW
Gate Charge(Qg):
4.9nC@10V
Mfr. Part #:
L2N7002FLT1G
Package:
SOT-23
Product Description

Product Overview

The L2N7002FLT1G is a small signal N-Channel MOSFET from LESHAN RADIO COMPANY, LTD., designed for high-performance power management applications. Featuring a super high-density cell design, it offers extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. This device is suitable for power management in notebooks, portable equipment, battery-powered systems, and load switching. It also includes ESD protection up to 1000V and is Halogen Free and RoHS compliant.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Device Marking: 72F (Device Code), M (Month Code)
  • Material Compliance: Halogen Free, RoHS compliant
  • Package Type: SOT 23 (TO236AB)

Technical Specifications

Model Description Ordering Information Package Quantity Device Marking
L2N7002FLT1G N-Channel Small Signal MOSFET L2N7002FLT1G SOT 23 (TO236AB) 3000 72F
L2N7002FLT3G N-Channel Small Signal MOSFET L2N7002FLT3G SOT 23 (TO236AB) 10000 72F
Characteristic Symbol Limit Unit Notes
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250A
Gate Threshold Voltage VGS(th) 0.8 - 1.5 V VDS=VGS, ID=250A
Gate-Body Leakage IGSS 10 A VDS=0V, VGS=20V
Zero Gate Voltage Drain Current IDSS 1 A VDS=30V, VGS=0V
Drain-Source On-Resistance RDS(ON) 5 - 8 VGS=4V, ID=10mA
7 - 13 VGS=2.5V, ID=1mA
Diode Forward Voltage VSD 1.2 V IS=200mA, VGS=0V
Total Gate Charge Qg 4.9 nC VDS=25V, VGS=10V, ID=0.22A
Gate-Source Charge Qgs 2.1 nC VDS=25V, VGS=10V, ID=0.22A
Gate-Drain Charge Qgd 0.6 nC VDS=25V, VGS=10V, ID=0.22A
Input Capacitance Ciss 21 pF VDS=25V, VGS=0V, f=1MHz
Output Capacitance Coss 10 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss 2 pF VDS=25V, VGS=0V, f=1MHz
Turn-On Delay Time td(on) 10.1 ns VDD=5V, RL =500, VGES=5V,RG=10
Turn-On Rise Time tr 7.3 ns VDD=5V, RL =500, VGES=5V,RG=10
Turn-Off Delay Time td(off) 31.3 ns VDD=5V, RL =500, VGES=5V,RG=10
Turn-Off Fall Time tf 28.2 ns VDD=5V, RL =500, VGES=5V,RG=10
Absolute Maximum Ratings Symbol Limit Unit Notes
Drain-Source Voltage VDS 30 V TA=25
Gate-Source Voltage VGS 20 V TA=25
Thermal Characteristics Symbol Limit Unit Notes
Total Device Dissipation PD 225 mW FR5 Board, TA = 25C
1.8 mW/C Derate above 25C (FR5 Board)
Thermal Resistance, Junction to Ambient RJA 556 C/W FR5 Board
Total Device Dissipation PD 300 mW Alumina Substrate, TA = 25C
2.4 mW/C Derate above 25C (Alumina Substrate)
Thermal Resistance, Junction to Ambient RJA 417 C/W Alumina Substrate (99.5% alumina)
Junction and Storage Temperature TJ, Tstg -55 to +150 C
Dimensions (SOT-23) MIN (inch) MAX (inch) MIN (mm) MAX (mm)
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60

1810010127_LRC-L2N7002FLT1G_C135804.pdf

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