N Channel P Channel Power MOSFET LRC LBSS8402DW1T1G SC88 Package Automotive RoHS Compliant Device
Product Overview
This document details the LBSS8402DW1T1G and S-LBSS8402DW1T1G series of N-Channel and P-Channel POWER MOSFETs from Leshan Radio Company, LTD. These devices are designed for automotive and other applications requiring unique site and control change requirements, with the S- prefix models being AEC-Q101 qualified and PPAP capable. They are RoHS compliant and Halogen Free. The MOSFETs are available in the SC88 (SOT-363) package and are supplied in tape and reel.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Qualification: AEC-Q101 qualified (S- prefix models)
- PPAP Capable: Yes (S- prefix models)
- Package: SC88 (SOT-363)
Technical Specifications
| Parameter | Symbol | N-Channel Min. | N-Channel Typ. | N-Channel Max. | N-Channel Unit | P-Channel Min. | P-Channel Typ. | P-Channel Max. | P-Channel Unit | |
|---|---|---|---|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta = 25C) | ||||||||||
| DrainSource Voltage | VDSS | 50 | -50 | V | ||||||
| GatetoSource Voltage Continuous | VGS | 20 | 20 | V | ||||||
| Continuous Drain Current | ID | 130 | -130 | mA | ||||||
| Pulsed Drain Current (tp 10 s) | IDM | 520 | -520 | mA | ||||||
| Total Power Dissipation @ TA = 25C | PD | 380 | 380 | mW | ||||||
| Thermal Resistance, JunctiontoAmbient | RJA | 328 | 328 | /W | ||||||
| Junction and Storage temperature range | TJ,Tstg | 55+150 | 55+150 | |||||||
| Maximum Lead Temperature for Soldering Purposes, for 10 seconds | TL | 260 | 260 | |||||||
| ELECTRICAL CHARACTERISTICS (Ta= 25C) | ||||||||||
| DrainSource Breakdown Voltage | VBRDSS | 50 | - | - | V | -50 | - | - | V | |
| Zero Gate Voltage Drain Current | IDSS | - | - | 0.1 | A | - | - | -0.1 | A | |
| GateSource Leakage Current | IGSS | - | - | 0.1 | A | - | - | 0.1 | A | |
| GateSource Threshold Voltage | VGS(th) | 0.5 | - | 1.5 | V | -0.8 | - | -2.0 | V | |
| Static DrainSource OnState Resistance | RDS(on) | - | 5.6 | 10 | Ohm | - | 5 | 10 | Ohm | |
| Input Capacitance | Ciss | - | 42 | - | pF | - | 30 | - | pF | |
| Output Capacitance | Coss | - | 15 | - | pF | - | 10 | - | pF | |
| Transfer Capacitance | Crss | - | 3 | - | pF | - | 5 | - | pF | |
| TurnOn Delay Time | td(on) | - | 5 | - | ns | - | - | - | ns | |
| TurnOff Delay Time | td(off) | - | 7 | - | ns | - | - | - | ns | |
| Gate Charge | Qg | - | - | - | pC | - | 6000 | - | pC | |
| Device Marking and Ordering Information | ||||||||||
| Model | Device Marking | Quantity/Tape&Reel | Notes | |||||||
| LBSS8402DW1T1G | 402 | 3000 | ||||||||
| S-LBSS8402DW1T1G | 402 | 3000 | AEC-Q101 qualified and PPAP capable | |||||||
| LBSS8402DW1T3G | 402 | 10000 | ||||||||
Dimensions:
| DIM | MILLIMETERS (MIN) | MILLIMETERS (NOM) | MILLIMETERS (MAX) | INCHES (MIN) | INCHES (NOM) | INCHES (MAX) |
|---|---|---|---|---|---|---|
| A | --- | --- | 1.10 | --- | --- | 0.043 |
| A1 | 0 | --- | 0.10 | 0 | --- | 0.004 |
| A2 | 0.70 | 0.90 | 1.00 | 0.027 | 0.035 | 0.043 |
| b | 0.15 | 0.20 | 0.25 | 0.006 | 0.008 | 0.010 |
| C | 0.08 | 0.15 | 0.22 | 0.003 | 0.006 | 0.009 |
| D | 1.80 | 2.00 | 2.20 | 0.071 | 0.079 | 0.087 |
| E | 2.00 | 2.10 | 2.20 | 0.079 | 0.083 | 0.087 |
| E1 | 1.15 | 1.25 | 1.35 | 0.045 | 0.049 | 0.053 |
| L | 0.26 | 0.36 | 0.46 | 0.010 | 0.014 | 0.018 |
| L2 | 0.15 | --- | --- | 0.006 | --- | --- |
| e | 0.65 | BSC | --- | 0.026 | BSC | --- |
| aaa | 0.15 | 0.01 | --- | --- | --- | --- |
| bbb | 0.30 | 0.01 | --- | --- | --- | --- |
| ccc | 0.10 | 0.00 | --- | --- | --- | --- |
| ddd | 0.10 | 0.00 | --- | --- | --- | --- |
1912111437_LRC-LBSS8402DW1T1G_C383206.pdf
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