N Channel P Channel Power MOSFET LRC LBSS8402DW1T1G SC88 Package Automotive RoHS Compliant Device

Key Attributes
Model Number: LBSS8402DW1T1G
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
10Ω@2.75V
Gate Threshold Voltage (Vgs(th)):
1.5V@1.0mA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
3pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
15pF
Input Capacitance(Ciss):
42pF
Pd - Power Dissipation:
380mW
Gate Charge(Qg):
6nC
Mfr. Part #:
LBSS8402DW1T1G
Package:
SC-88
Product Description

Product Overview

This document details the LBSS8402DW1T1G and S-LBSS8402DW1T1G series of N-Channel and P-Channel POWER MOSFETs from Leshan Radio Company, LTD. These devices are designed for automotive and other applications requiring unique site and control change requirements, with the S- prefix models being AEC-Q101 qualified and PPAP capable. They are RoHS compliant and Halogen Free. The MOSFETs are available in the SC88 (SOT-363) package and are supplied in tape and reel.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS requirements and Halogen Free
  • Qualification: AEC-Q101 qualified (S- prefix models)
  • PPAP Capable: Yes (S- prefix models)
  • Package: SC88 (SOT-363)

Technical Specifications

Parameter Symbol N-Channel Min. N-Channel Typ. N-Channel Max. N-Channel Unit P-Channel Min. P-Channel Typ. P-Channel Max. P-Channel Unit
MAXIMUM RATINGS (Ta = 25C)
DrainSource Voltage VDSS 50 -50 V
GatetoSource Voltage Continuous VGS 20 20 V
Continuous Drain Current ID 130 -130 mA
Pulsed Drain Current (tp 10 s) IDM 520 -520 mA
Total Power Dissipation @ TA = 25C PD 380 380 mW
Thermal Resistance, JunctiontoAmbient RJA 328 328 /W
Junction and Storage temperature range TJ,Tstg 55+150 55+150
Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 260
ELECTRICAL CHARACTERISTICS (Ta= 25C)
DrainSource Breakdown Voltage VBRDSS 50 - - V -50 - - V
Zero Gate Voltage Drain Current IDSS - - 0.1 A - - -0.1 A
GateSource Leakage Current IGSS - - 0.1 A - - 0.1 A
GateSource Threshold Voltage VGS(th) 0.5 - 1.5 V -0.8 - -2.0 V
Static DrainSource OnState Resistance RDS(on) - 5.6 10 Ohm - 5 10 Ohm
Input Capacitance Ciss - 42 - pF - 30 - pF
Output Capacitance Coss - 15 - pF - 10 - pF
Transfer Capacitance Crss - 3 - pF - 5 - pF
TurnOn Delay Time td(on) - 5 - ns - - - ns
TurnOff Delay Time td(off) - 7 - ns - - - ns
Gate Charge Qg - - - pC - 6000 - pC
Device Marking and Ordering Information
Model Device Marking Quantity/Tape&Reel Notes
LBSS8402DW1T1G 402 3000
S-LBSS8402DW1T1G 402 3000 AEC-Q101 qualified and PPAP capable
LBSS8402DW1T3G 402 10000

Dimensions:

DIM MILLIMETERS (MIN) MILLIMETERS (NOM) MILLIMETERS (MAX) INCHES (MIN) INCHES (NOM) INCHES (MAX)
A --- --- 1.10 --- --- 0.043
A1 0 --- 0.10 0 --- 0.004
A2 0.70 0.90 1.00 0.027 0.035 0.043
b 0.15 0.20 0.25 0.006 0.008 0.010
C 0.08 0.15 0.22 0.003 0.006 0.009
D 1.80 2.00 2.20 0.071 0.079 0.087
E 2.00 2.10 2.20 0.079 0.083 0.087
E1 1.15 1.25 1.35 0.045 0.049 0.053
L 0.26 0.36 0.46 0.010 0.014 0.018
L2 0.15 --- --- 0.006 --- ---
e 0.65 BSC --- 0.026 BSC ---
aaa 0.15 0.01 --- --- --- ---
bbb 0.30 0.01 --- --- --- ---
ccc 0.10 0.00 --- --- --- ---
ddd 0.10 0.00 --- --- --- ---

1912111437_LRC-LBSS8402DW1T1G_C383206.pdf

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