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quality PNP General Purpose Amplifier MCC MMBT4403-TP SOT-23 Package RoHS Compliant UL 94 V0 Certified factory
quality PNP General Purpose Amplifier MCC MMBT4403-TP SOT-23 Package RoHS Compliant UL 94 V0 Certified factory

PNP General Purpose Amplifier MCC MMBT4403-TP SOT-23 Package RoHS Compliant UL 94 V0 Certified

Key Attributes
Model Number: MMBT4403-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT4403-TP
Package:
SOT-23
Product Description

MMBT4403 PNP General Purpose Amplifier

The MMBT4403 is a PNP general-purpose amplifier in a SOT-23 package, capable of 350mW of power dissipation. It is designed for various amplification applications and features a lead-free finish, RoHS compliance, and an epoxy that meets UL 94 V-0 flammability rating. This component is also moisture sensitivity level 1 and available in a halogen-free option.

Product Attributes

  • Brand: Micro Commercial Components (MCC)
  • Package: SOT-23
  • Certifications: RoHS Compliant, UL 94 V-0 flammability rating, Moisture Sensitivity Level 1
  • Available Options: Halogen free upon request (suffix "-HF")

Technical Specifications

Parameter Min Max Units Conditions
Collector-Emitter Breakdown Voltage (V(BR)CEO) 40 Vdc IC=1.0mAdc, IB=0
Collector-Base Breakdown Voltage (V(BR)CBO) 40 Vdc IC=100Adc, IE=0
Emitter-Base Breakdown Voltage (V(BR)EBO) 5.0 Vdc IE=100Adc, IC=0
Base Cutoff Current (IBL) 0.1 Adc VCE=30Vdc, VBE=3.0Vdc
Collector Cutoff Current (ICEX) 0.1 Adc VCE=30Vdc, VBE=3.0Vdc
DC Current Gain (hFE) 30 IC=0.1mAdc, VCE=1.0Vdc
DC Current Gain (hFE) 60 IC=1.0mAdc, VCE=1.0Vdc
DC Current Gain (hFE) 100 IC=10mAdc, VCE=1.0Vdc
DC Current Gain (hFE) 100 IC=150mAdc, VCE=2.0Vdc
DC Current Gain (hFE) 300 IC=500mAdc, VCE=2.0Vdc
Collector-Emitter Saturation Voltage (VCE(sat)) 0.4 Vdc IC=150mAdc, IB=15mAdc
Collector-Emitter Saturation Voltage (VCE(sat)) 0.75 Vdc IC=500mAdc, IB=50mAdc
Base-Emitter Saturation Voltage (VBE(sat)) 0.75 Vdc IC=150mAdc, IB=15mAdc
Base-Emitter Saturation Voltage (VBE(sat)) 0.95 1.30 Vdc IC=500mAdc, IB=50mAdc
Current Gain-Bandwidth Product (fT) 200 MHz IC=20mAdc, VCE=10Vdc, f=100MHz
Output Capacitance (Ccb) 8.5 pF VCB=10Vdc, IE=0, f=1.0MHz
Input Capacitance (Ceb) 30.0 pF VEB=0.5Vdc, IC=0, f=1.0MHz
Delay Time (td) 15 ns VCC=3.0Vdc, VBE=2.0Vdc, IC=150mAdc, IB1=15mAdc
Rise Time (tr) 20 ns VCC=3.0Vdc, IC=150mAdc, IB1=15mAdc
Storage Time (ts) 225 ns VCC=3.0Vdc, IC=150mAdc, IB1=IB2=15mAdc
Fall Time (tf) 30 ns VCC=3.0Vdc, IC=150mAdc, IB1=IB2=15mAdc
Thermal Resistance, Junction to Ambient (RthJA) 357 C/W NOTE 2
Maximum Power Dissipation (PD(MAX)) 350 mW

NOTE 1: Pulse Width 300s, Duty Cycle 2.0%

NOTE 2: For the device mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

Operating and Storage Junction Temperatures: -55C to 150C

Marking: 2T/M3A


2410121908_MCC-MMBT4403-TP_C194857.pdf

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