N Channel MOSFET LRC LN8342DT1AG 30 Volt Low RDS on Trench Technology for Power Routing Applications
Product Overview
The LN8342DT1AG is a high-performance N-Channel 30-V (D-S) MOSFET featuring low RDS(on) trench technology, low thermal impedance, and fast switching speed. It is designed for applications such as Power Routing, DC/DC Conversion, and Motor Drives. This device is Halogen Free and compliant with RoHS requirements.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material: Halogen Free
- RoHS Compliance: Yes
- Channel Type: N-Channel
- Package Type: DFN3030-8B
Technical Specifications
| Parameter | Symbol | Unit | Limits | Notes |
|---|---|---|---|---|
| MAXIMUM RATINGS (Ta = 25C unless otherwise stated) | ||||
| DraintoSource Voltage | VDSS | V | 30 | |
| GatetoSource Voltage | VGS | V | ±20 | |
| Continuous Drain Current | ID | A | 30 (TC=25°C), 25 (TC=70°C) | |
| Pulsed Drain Current | IDM | A | 160 | Pulse width limited by maximum junction temperature. |
| Continuous Source Current (Diode Conduction) | IS | A | 35 (Steady State), 81 (t≤10s) | Package limited |
| Avalanche energy | EAS | mJ | 61 | L=0.1mH |
| Avalanche Current | IAS | A | 35 | |
| Power Dissipation | PD | W | 3.5 (TA=25°C), 2 (TA=70°C) | Surface Mounted on 1” x 1” FR4 Board. |
| Operating Junction Temperature | TJ | °C | -55 ~+150 | |
| Storage Temperature Range | Tstg | °C | -55 ~+150 | |
| THERMAL CHARACTERISTICS | ||||
| Maximum Junction-to-Case | RθJC | °C/W | 3.2 | |
| Maximum Junction-to-Ambient | RθJA | °C/W | 39 (Steady State) | Note 1 |
| ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise stated) | ||||
| DrainSource Breakdown Voltage | V(BR)DSS | V | 30 | VGS = 0V, ID = 250μA |
| Static Gate-Source Threshold Voltage | VGS(th) | V | 1.1 | VDS = VGS, ID = 250 μA |
| Gate-Body Leakage | IGSS | μA | ±10 | VDS = 0 V, VGS = ±20 V |
| Zero Gate Voltage Drain Current | IDSS | μA | 5 (VDS = 24 V, VGS = 0 V), 30 (VDS = 24 V, VGS = 0 V, TJ = 55°C) | |
| On-State Drain Current | ID(on) | A | 25 | VDS = 5 V, VGS = 10 V |
| Drain-Source On-Resistance | RDS(on) | Ω | 4.8 (VGS=10V, ID=20A), 6.8 (VGS=4.5V, ID=16A) | Note 4 |
| Forward Transconductance | gfs | S | 25 | VDS = 15 V, ID = 20 A |
| Diode Forward Voltage | VSD | V | - | IS = 2.5 A, VGS = 0 V |
| Total Gate Charge | Qg | nC | 32 | (VDS = 15 V, VGS = 4.5 V,ID = 20A) |
| Gate-Source Charge | Qgs | nC | 13 | |
| Gate-Drain Charge | Qgd | nC | 13 | |
| Input Capacitance | Ciss | pF | 4153 | (VDS=15 V, VGS = 4.5 V,ID = 20A) |
| Output Capacitance | Coss | pF | 301 | (VDS=15 V, VGS = 4.5 V,ID = 20A) |
| Reverse Transfer Capacitance | Crss | pF | 283 | (VDS=15 V, VGS = 4.5 V,ID = 20A) |
| Turn-On Delay Time | td(on) | ns | 13 | (VDS=15 V, RL=0.8 Ω,ID=20 A,VGEN=10 V,RGEN=6 Ω) |
| Rise Time | tr | ns | 15 | (VDS=15 V, RL=0.8 Ω,ID=20 A,VGEN=10 V,RGEN=6 Ω) |
| Turn-Off Delay Time | td(off) | ns | 75 | (VDS=15 V, RL=0.8 Ω,ID=20 A,VGEN=10 V,RGEN=6 Ω) |
| Fall Time | tf | ns | 25 | (VDS=15 V, RL=0.8 Ω,ID=20 A,VGEN=10 V,RGEN=6 Ω) |
| Gate Resistance | Rg | Ω | 0.6 | (VDS=0V ,VGS=0V, f=1.0MHz) |
| Ordering Information | ||||
| Device | LN8342DT1AG | |||
| Marking | A42 | |||
| Shipping | 3000/Tape&Reel | |||
| Dimensions (DFN3030-8B) | ||||
| Dimension | X1 | X2 | X | X3 |
| Value (mm) | 0.40 | 0.50 | 2.80 | 0.50 |
| Dimension | Y1 | Y2 | Y | C |
| Value (mm) | 2.20 | 3.20 | 3.00 | 0.65 |
| Dimension | C1 | L2 | L1 | L |
| Value (mm) | 0.70 | 0.57 | 0.55 | 0.45 |
| Dimension | D1 | D | E1 | E |
| Value (mm) | 2.95 Max | 3.05 Max | 0.60 | 0.62 |
| Dimension | A1 | A3 | A | b1 |
| Value (mm) | 0.35 | 0.00 | 1.45 | 0.40 |
| Dimension | b2 | b | e | |
| Value (mm) | 0.50 | 0.152REF. | 0.65BSC | |
2411220658_LRC-LN8342DT1AG_C525394.pdf
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