N Channel MOSFET LRC LN8342DT1AG 30 Volt Low RDS on Trench Technology for Power Routing Applications

Key Attributes
Model Number: LN8342DT1AG
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.8mΩ@4.5V,16A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
283pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
4.153nF@30V
Pd - Power Dissipation:
39W
Gate Charge(Qg):
32nC@15V
Mfr. Part #:
LN8342DT1AG
Package:
DFN-8(3x3)
Product Description

Product Overview

The LN8342DT1AG is a high-performance N-Channel 30-V (D-S) MOSFET featuring low RDS(on) trench technology, low thermal impedance, and fast switching speed. It is designed for applications such as Power Routing, DC/DC Conversion, and Motor Drives. This device is Halogen Free and compliant with RoHS requirements.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material: Halogen Free
  • RoHS Compliance: Yes
  • Channel Type: N-Channel
  • Package Type: DFN3030-8B

Technical Specifications

Parameter Symbol Unit Limits Notes
MAXIMUM RATINGS (Ta = 25C unless otherwise stated)
DraintoSource Voltage VDSS V 30
GatetoSource Voltage VGS V ±20
Continuous Drain Current ID A 30 (TC=25°C), 25 (TC=70°C)
Pulsed Drain Current IDM A 160 Pulse width limited by maximum junction temperature.
Continuous Source Current (Diode Conduction) IS A 35 (Steady State), 81 (t≤10s) Package limited
Avalanche energy EAS mJ 61 L=0.1mH
Avalanche Current IAS A 35
Power Dissipation PD W 3.5 (TA=25°C), 2 (TA=70°C) Surface Mounted on 1” x 1” FR4 Board.
Operating Junction Temperature TJ °C -55 ~+150
Storage Temperature Range Tstg °C -55 ~+150
THERMAL CHARACTERISTICS
Maximum Junction-to-Case RθJC °C/W 3.2
Maximum Junction-to-Ambient RθJA °C/W 39 (Steady State) Note 1
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise stated)
DrainSource Breakdown Voltage V(BR)DSS V 30 VGS = 0V, ID = 250μA
Static Gate-Source Threshold Voltage VGS(th) V 1.1 VDS = VGS, ID = 250 μA
Gate-Body Leakage IGSS μA ±10 VDS = 0 V, VGS = ±20 V
Zero Gate Voltage Drain Current IDSS μA 5 (VDS = 24 V, VGS = 0 V), 30 (VDS = 24 V, VGS = 0 V, TJ = 55°C)
On-State Drain Current ID(on) A 25 VDS = 5 V, VGS = 10 V
Drain-Source On-Resistance RDS(on) Ω 4.8 (VGS=10V, ID=20A), 6.8 (VGS=4.5V, ID=16A) Note 4
Forward Transconductance gfs S 25 VDS = 15 V, ID = 20 A
Diode Forward Voltage VSD V - IS = 2.5 A, VGS = 0 V
Total Gate Charge Qg nC 32 (VDS = 15 V, VGS = 4.5 V,ID = 20A)
Gate-Source Charge Qgs nC 13
Gate-Drain Charge Qgd nC 13
Input Capacitance Ciss pF 4153 (VDS=15 V, VGS = 4.5 V,ID = 20A)
Output Capacitance Coss pF 301 (VDS=15 V, VGS = 4.5 V,ID = 20A)
Reverse Transfer Capacitance Crss pF 283 (VDS=15 V, VGS = 4.5 V,ID = 20A)
Turn-On Delay Time td(on) ns 13 (VDS=15 V, RL=0.8 Ω,ID=20 A,VGEN=10 V,RGEN=6 Ω)
Rise Time tr ns 15 (VDS=15 V, RL=0.8 Ω,ID=20 A,VGEN=10 V,RGEN=6 Ω)
Turn-Off Delay Time td(off) ns 75 (VDS=15 V, RL=0.8 Ω,ID=20 A,VGEN=10 V,RGEN=6 Ω)
Fall Time tf ns 25 (VDS=15 V, RL=0.8 Ω,ID=20 A,VGEN=10 V,RGEN=6 Ω)
Gate Resistance Rg Ω 0.6 (VDS=0V ,VGS=0V, f=1.0MHz)
Ordering Information
Device LN8342DT1AG
Marking A42
Shipping 3000/Tape&Reel
Dimensions (DFN3030-8B)
Dimension X1 X2 X X3
Value (mm) 0.40 0.50 2.80 0.50
Dimension Y1 Y2 Y C
Value (mm) 2.20 3.20 3.00 0.65
Dimension C1 L2 L1 L
Value (mm) 0.70 0.57 0.55 0.45
Dimension D1 D E1 E
Value (mm) 2.95 Max 3.05 Max 0.60 0.62
Dimension A1 A3 A b1
Value (mm) 0.35 0.00 1.45 0.40
Dimension b2 b e
Value (mm) 0.50 0.152REF. 0.65BSC

2411220658_LRC-LN8342DT1AG_C525394.pdf

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