General Purpose PNP Transistor MCC DMMT3906-TP Plastic Encapsulated Halogen Free and RoHS Compliant Device
Key Attributes
Model Number:
DMMT3906-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
250MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
DMMT3906-TP
Package:
SOT-363
Product Description
Product Overview
The DMMT3906 is a PNP plastic encapsulated transistor featuring an epitaxial planar die construction. It is designed for general-purpose applications and offers advantages such as being halogen-free, moisture sensitivity level 1, and compliant with UL 94 V-0 flammability rating. This device is lead-free and RoHS compliant, suitable for various electronic circuits requiring PNP transistor functionality.
Product Attributes
- Brand: MCCSEMI
- Internal Structure Marking: K3Q
- Material: Plastic Encapsulate
- Color: Not specified
- Certifications: Halogen Free, "Green" Device, Moisture Sensitivity Level 1, Epoxy Meets UL 94 V-0 Flammability Rating, Lead Free Finish/RoHS Compliant
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Operating Junction Temperature Range | -55 | +150 | Unless Otherwise Specified | |||
| Storage Temperature Range | -55 | +150 | Unless Otherwise Specified | |||
| Collector Current | IC | -200 | mA | (2) @ 25C | ||
| Collector Power Dissipation | PC | 200 | mW | @ 25C | ||
| Collector-Emitter Voltage | VCEO | -40 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector-Base Voltage | VCBO | -40 | V | |||
| Typical Thermal Resistance | Rth(j-a) | 625 | /W | Junction to Ambient | ||
| DC Current Gain | hFE(1) | 60 | VCE=-1V, IC=-10mA | |||
| DC Current Gain | hFE(2) | 80 | VCE=-1V, IC=-50mA | |||
| DC Current Gain | hFE(3) | 100 | 300 | VCE=-1V, IC=-1mA | ||
| DC Current Gain | hFE(4) | 60 | VCE=-1V, IC=-0.1mA | |||
| DC Current Gain | hFE(5) | 30 | VCE=-30V, VBE(OFF)=-3V | |||
| Collector Cutoff Current | ICEX | -50 | nA | VCE=-30V, VBE(OFF)=-3V | ||
| Emitter-Base Cutoff Current | IBL | -50 | nA | IE=-10A, IC=0 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IC=-10A, IE=0 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -40 | V | IC=-1mA, IB=0 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -40 | V | |||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.65 | -0.85 | V | IC=-10mA, IB=-1mA | |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.4 | -0.5 | V | IC=-50mA, IB=-5mA | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.25 | V | IC=-10mA, IB=-1mA | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.2 | V | IC=-100mA, IB=-5mA | ||
| Fall Time | tf | 75 | ns | VCC=-3V, IC=-10mA, IB1=-IB2=-1mA | ||
| Storage Time | ts | 225 | ns | VCC=-3V, IC=-10mA, IB1=-IB2=-1mA | ||
| Rise Time | tr | 35 | ns | VCC=-3V, IC=-10mA, IB1=-IB2=-1mA | ||
| Delay Time | td | 35 | ns | VCC=-3V, IC=-10mA, IB1=-IB2=-1mA | ||
| Output Capacitance | Ccbo | 4.5 | pF | VCE=-20V, IC=-10mA, f=100MHz | ||
| Transition Frequency | fT | 250 | MHz | VCB=-5V, IE=0, f=1MHz |
2410010231_MCC-DMMT3906-TP_C779246.pdf
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