Fast Switching 60V N Channel MOSFET LRC LN06N060TZHG Compliant with RoHS and Halogen Free Standards
Key Attributes
Model Number:
LN06N060TZHG
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
26pF
Number:
1 N-channel
Input Capacitance(Ciss):
743pF
Output Capacitance(Coss):
38pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
12.7nC@10V
Mfr. Part #:
LN06N060TZHG
Package:
SOT-223
Product Description
Product Overview
The LN06N060TZHG is a 60V N-Channel (D-S) MOSFET designed for load/power switching in portable and computing applications, as well as DC-DC conversion. It features low thermal impedance and fast switching speed. The material of this product complies with RoHS requirements and is Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Compliance: RoHS, Halogen Free
- Device Marking: LN06N060TZHG
- Shipping: 1000/Tape&Reel
Technical Specifications
| Parameter | Symbol | Limits | Unit | Notes |
|---|---|---|---|---|
| MAXIMUM RATINGS (Ta = 25C) | ||||
| Operating Junction and Storage Temperature Range | TJ , Tstg | -55~+150 | ||
| Avalanche Energy | EAS | mJ | (L = 0.1mH) | |
| Avalanche Current | IAS | 20 | A | (L = 0.1mH) |
| Power Dissipation | PD | 2 | W | (Note 1) TA = 25 |
| Continuous Drain Current | ID | 4.5 | A | (Note 1) TA = 25 |
| Pulsed Drain Current | IDM | A | (Note 2) | |
| Drain-Source Voltage | VDS | 60 | V | |
| Gate-Source Voltage | VGS | 18 | V | |
| THERMAL CHARACTERISTICS | ||||
| Thermal Resistance, JunctiontoAmbient | RJA | 60 | /W | (Note 1) |
| Thermal Resistance, Junction-to-Case | RJC | 10 | /W | |
| ELECTRICAL CHARACTERISTICS (Ta= 25C) | ||||
| DrainSource Breakdown Voltage | VBRDSS | 60 | V | (VGS = 0 V, ID = 250 A) |
| Gate-Source Threshold Voltage | VGS(th) | 1.0 - 2.0 | V | (VDS = VGS , ID = 250 A) |
| Gate-Body Leakage Current | IGSS | 100 | nA | (VDS = 0 V, VGS = 20 V) |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | (VDS = 60 V, VGS = 0 V) |
| Drain-Source On-Resistance | RDS(ON) | - - 75 | m | (VGS = 10 V, ID = 3 A) (Note 3) |
| Diode Forward Voltage | VSD | - - 1.2 | V | (IS = 1 A, VGS = 0 V) |
| Total Gate Charge | Qg | 12.7 | nC | (VDS = 30 V, ID = 3 A, VGS = 10 V) |
| Gate-Source Charge | Qgs | 2.3 | nC | (VDS = 30 V, ID = 3 A, VGS = 10 V) |
| Gate-Drain Charge | Qgd | 3.6 | nC | (VDS = 30 V, ID = 3 A, VGS = 10 V) |
| Input Capacitance | Ciss | 743 | pF | (VGS = 0 V, VDS = 30 V, f= 1MHz) |
| Output Capacitance | Coss | 38 | pF | (VGS = 0 V, VDS = 30 V, f= 1MHz) |
| Reverse Transfer Capacitance | Crss | 26 | pF | (VGS = 0 V, VDS = 30 V, f= 1MHz) |
| Turn-On Delay Time | td(on) | 8.1 | ns | (VDS = 30 V, ID = 3 A, VGS = 10 V, RG = 6.2 ) |
| Rise Time | tr | 4.2 | ns | (VDS = 30 V, ID = 3 A, VGS = 10 V, RG = 6.2 ) |
| Turn-Off Delay Time | td(off) | 5.2 | ns | (VDS = 30 V, ID = 3 A, VGS = 10 V, RG = 6.2 ) |
| Fall Time | tf | ns | (VDS = 30 V, ID = 3 A, VGS = 10 V, RG = 6.2 ) | |
| Package | Dimensions (mm) |
|---|---|
| SOT223 | MIN: 1.50x3.30x6.30, NOR: 1.60x3.50x6.50, MAX: 1.70x3.70x6.70 (LxWxH) |
| Description | Value | Unit |
|---|---|---|
| Package Type | SOT223 | |
| Channel Type | N-Channel | |
| Drain-Source Voltage (VDS) | 60 | V |
| Continuous Drain Current (ID) | 4.5 | A |
| Package Marking | LN06N060TZHG |
2212131830_LRC-LN06N060TZHG_C5273637.pdf
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