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quality N Channel MOSFET LRC L2N7002SLT1G Designed for Level Shift Circuits and Portable Device Applications factory
quality N Channel MOSFET LRC L2N7002SLT1G Designed for Level Shift Circuits and Portable Device Applications factory

N Channel MOSFET LRC L2N7002SLT1G Designed for Level Shift Circuits and Portable Device Applications

Key Attributes
Model Number: L2N7002SLT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
320mA
RDS(on):
3.2Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
35pF
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
440pC@4.5V
Mfr. Part #:
L2N7002SLT1G
Package:
SOT-23
Product Description

Product Overview

The L2N7002SLT1G and S-L2N7002SLT1G are N-Channel Small Signal MOSFETs designed for various applications including low side load switches, level shift circuits, DC-DC converters, and portable devices like DSCs, PDAs, and cell phones. These MOSFETs are RoHS compliant and Halogen Free, with the S-prefix variants offering AEC-Q101 qualification and PPAP capability for automotive and other demanding applications requiring unique site and control change requirements. They feature ESD protection and low RDS(on).

Product Attributes

  • Material Compliance: RoHS and Halogen Free
  • Automotive Qualification (S-prefix): AEC-Q101 qualified, PPAP capable
  • ESD Protected
  • Packaging: SOT-23 (TO-236)
  • Manufacturer: Leshan Radio Company, LTD.

Technical Specifications

Parameter Symbol Limits Unit Device Marking Shipping
DrainSource Voltage VDSS 60 V L2N7002SLT1G, S-L2N7002SLT1G 701 3000/Tape&Reel
Pulsed Drain Current (tp=10s) IDM 1.5 A L2N7002SLT1G
Pulsed Drain Current (tp=10s) IDM 1.0 A S-L2N7002SLT1G
Source Current (Body Diode) IS 380 mA L2N7002SLT1G, S-L2N7002SLT1G
Drain Current (Steady State, TA = 25C) ID 300 mA L2N7002SLT1G, S-L2N7002SLT1G
Drain Current (Steady State, TA = 85C) ID 230 mA L2N7002SLT1G, S-L2N7002SLT1G
Drain Current (t<5s, TA = 25C) ID 701 mA L2N7002SLT1G 10000/Tape&Reel
Drain Current (t<5s, TA = 85C) ID 1000 mA S-L2N7002SLT1G
Gate-Source Voltage VGS 20 V L2N7002SLT1G, S-L2N7002SLT1G
Total Device Dissipation (Steady State) PD 420 mW L2N7002SLT1G, S-L2N7002SLT1G
Total Device Dissipation (t<5s) PD 417 mW L2N7002SLT1G, S-L2N7002SLT1G
Junction-to-Ambient Resistance (Steady State) RJA 300 C/W L2N7002SLT1G, S-L2N7002SLT1G
Junction and Storage Temperature TJ, Tstg -55 to +150 C L2N7002SLT1G, S-L2N7002SLT1G
Lead Temperature for Soldering (1/8 " from case for 10 s) TL 260 C L2N7002SLT1G, S-L2N7002SLT1G
DrainSource Breakdown Voltage VBRDSS 60 V L2N7002SLT1G, S-L2N7002SLT1G
Zero Gate Voltage Drain Current (TJ = 25C, VGS = 0, VDS = 60 V) IDSS 1.0 A L2N7002SLT1G, S-L2N7002SLT1G
Zero Gate Voltage Drain Current (TJ = 125C, VGS = 0, VDS = 50 V) IDSS 10 A L2N7002SLT1G, S-L2N7002SLT1G
GateBody Leakage Current, Forward (VGS = 20 V) IGSSF 100 nA L2N7002SLT1G, S-L2N7002SLT1G
GateBody Leakage Current, Reverse (VGS = - 20 V) IGSSR 100 nA L2N7002SLT1G, S-L2N7002SLT1G
Gate Threshold Voltage (VDS = VGS, ID = 250A) VGS(th) 1.0 V L2N7002SLT1G, S-L2N7002SLT1G
Static DrainSource OnState Resistance (VGS = 10 V, ID = 500 mA) RDS(on) 2.8 L2N7002SLT1G, S-L2N7002SLT1G
Static DrainSource OnState Resistance (VGS = 4.5 V, ID = 200 mA) RDS(on) 3.2 L2N7002SLT1G, S-L2N7002SLT1G
Forward Transconductance (VDS = 5.0 V, ID = 200 mA) gfs 80 mS L2N7002SLT1G, S-L2N7002SLT1G
Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Ciss 71 pF L2N7002SLT1G, S-L2N7002SLT1G
Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Coss 35 pF L2N7002SLT1G, S-L2N7002SLT1G
Reverse Transfer Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Crss 10 pF L2N7002SLT1G, S-L2N7002SLT1G
Total Gate Charge QG(TOT) 0.44 nC L2N7002SLT1G, S-L2N7002SLT1G
GateSource Charge QGS 0.1 nC L2N7002SLT1G, S-L2N7002SLT1G
GatetoDrain Charge QGD 0.114 nC L2N7002SLT1G, S-L2N7002SLT1G
TurnOn Delay Time td(on) 2.7 ns L2N7002SLT1G, S-L2N7002SLT1G
Rise Time tr 2.5 ns L2N7002SLT1G, S-L2N7002SLT1G
TurnOff Delay Time td(off) 13 ns L2N7002SLT1G, S-L2N7002SLT1G
Fall Time tf 8 ns L2N7002SLT1G, S-L2N7002SLT1G
Diode Forward OnVoltage (IS = 0.5A, VGS = 0 V) VSD 0.85 V L2N7002SLT1G, S-L2N7002SLT1G
DrainSource Breakdown Voltage Temperature Coefficient VBRDSS/TJ 0.2 %/C L2N7002SLT1G, S-L2N7002SLT1G
GateSource ESD Rating (HBM, Method 3015) ESD 2000 V L2N7002SLT1G, S-L2N7002SLT1G

2304140030_LRC-L2N7002SLT1G_C250818.pdf

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