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quality 20V P Channel MOSFET with Trench Technology Featuring Low RDS ON and Fast Switching LRC LP4217T1G Device factory
quality 20V P Channel MOSFET with Trench Technology Featuring Low RDS ON and Fast Switching LRC LP4217T1G Device factory

20V P Channel MOSFET with Trench Technology Featuring Low RDS ON and Fast Switching LRC LP4217T1G Device

Key Attributes
Model Number: LP4217T1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
RDS(on):
34mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
192pF
Number:
1 P-Channel
Output Capacitance(Coss):
198pF
Input Capacitance(Ciss):
1.629nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
30nC@4.5V
Mfr. Part #:
LP4217T1G
Package:
SOP-8
Product Description

Product Overview

The LP4217T1G is a 20V P-Channel (D-S) MOSFET featuring low RDS(ON) trench technology, low thermal impedance, and fast switching speed. It is designed for applications such as Load Switches, DC/DC Conversion, and Motor Drives. The product complies with RoHS requirements and is Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Device Type: P-Channel (D-S) MOSFET
  • Technology: Trench technology

Technical Specifications

Parameter Symbol Limits Unit Notes
Device Marking LP4217T1G
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS 10 V
Continuous Drain Current ID -7 (TA = 25), -30 (TA = 70) A Note 1
Pulsed Drain Current IDM 2 A Note 2
Power Dissipation PD 1.5 W Note 1
Operating Junction and Storage Temperature Range TJ , Tstg -55~+150
Thermal Resistance, Junction-to-Ambient RJA 60 /W Note 1
Thermal Resistance, Junction-to-Case RJC 12 /W
Drain-Source Breakdown Voltage V(BR)DSS -20 V (VGS = 0 V, ID = -250 uA)
Gate Threshold Voltage VGS(th) -0.9 V (VDS = VGS , ID = -250 A)
Gate Leakage Current IGSS 10 A (VDS = 0 V, VGS = 10 V)
Zero Gate Voltage Drain Current IDSS -1 A (VDS = -16 V, VGS = 0 V)
Drain-Source On-Resistance RDS(ON) 26 (VGS = -4.5 V, ID = -7 A), 34 (VGS = -2.5 V, ID = -5.6 A) m Note 3
Diode Forward Voltage VSD -1.3 V (IS = -2.5 A, VGS = 0 V), Note 3
Total Gate Charge Qg 19 nC (VDS = -10 V, VGS = -4.5 V,ID = -7 A), Note 4
Gate-Source Charge Qgs 6 nC (VDS = -10 V, VGS = -4.5 V,ID = -7 A), Note 4
Gate-Drain Charge Qgd 12 nC (VDS = -10 V, VGS = -4.5 V,ID = -7 A), Note 4
Turn-On Delay Time td(on) 4 ns (VDS = -10 V, RL = 1.4 ,ID = -7 A,VGEN = -4.5 V, RGEN = 6 ), Note 4
Rise Time tr 6 ns (VDS = -10 V, RL = 1.4 ,ID = -7 A,VGEN = -4.5 V, RGEN = 6 ), Note 4
Turn-Off Delay Time td(off) 198 ns (VDS = -10 V, RL = 1.4 ,ID = -7 A,VGEN = -4.5 V, RGEN = 6 ), Note 4
Fall Time tf 192 ns (VDS = -10 V, RL = 1.4 ,ID = -7 A,VGEN = -4.5 V, RGEN = 6 ), Note 4
Input Capacitance Ciss 1629 pF (VDS = -15 V, VGS = 0 V, f = 1 MHz), Note 4
Output Capacitance Coss 85 pF (VDS = -15 V, VGS = 0 V, f = 1 MHz), Note 4
Reverse Transfer Capacitance Crss 19 pF (VDS = -15 V, VGS = 0 V, f = 1 MHz), Note 4
Package Type SOP-8
Shipping 4000/Tape&Reel

Notes:

  • Note 1: Surface mounted on "1.5 x 1.5" FR4 board using 1 sq in pad, 2 oz Cu.
  • Note 2: Pulse width limited by maximum junction temperature.
  • Note 3: Pulse test; pulse width300s, duty cycle 2%.
  • Note 4: Guaranteed by design, not subject to production testing.

2201121730_LRC-LP4217T1G_C2936680.pdf

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