N-channel MOSFET LRC L2SK3018WT1G featuring PPAP capability and AEC-Q101 qualification for automotive
Key Attributes
Model Number:
L2SK3018WT1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
13Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@100uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Output Capacitance(Coss):
9pF
Input Capacitance(Ciss):
13pF
Pd - Power Dissipation:
200mW
Mfr. Part #:
L2SK3018WT1G
Package:
SC-70
Product Description
Product Overview
The L2SK3018WT1G and S-L2SK3018WT1G are N-channel MOSFETs designed for various applications, including automotive, requiring unique site and control change requirements. These devices are AEC-Q101 qualified and PPAP capable. Key features include low on-resistance, fast switching speed, and ease of paralleling. The low voltage drive capability (2.5V) makes them ideal for portable equipment, and their design facilitates easy drive circuit implementation. They offer robust ESD protection (>500V).
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free.
- Qualification: AEC-Q101 qualified and PPAP capable (for S- prefix models).
- Package: SC70 (SOT-323)
- Device Type: N-channel MOSFET
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta = 25C) | ||||||
| DrainSource Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Total power dissipation | PD(Note 2) | 200 | mW | (TC=25C) | ||
| Channel temperature | Tch | 150 | ||||
| Storage temperature | Tstg | -55 | 150 | |||
| Drain Current Continuous | ID | ±100 | mA | |||
| Pulsed Drain Current | IDP(Note 1) | ±400 | mA | (Pw≤10µs, Duty cycle≤1%) | ||
| Electrical Characteristics (Ta= 25C) | ||||||
| Gate-source leakage | IGSS | ±1 | µA | (VGS = ±20V, VDS = 0V) | ||
| DrainSource Breakdown Voltage | VBRDSS | 30 | V | (VGS = 0, ID = 10µA) | ||
| Zero Gate Voltage Drain Current | IDSS | 0.01 | µA | (VGS = 0, VDS = 30 V) | ||
| Gate Threshold Voltage | VGS(th) | 0.8 | 1.5 | V | (VDS = 3V, ID = 100µA) | |
| Static DrainSource OnState Resistance | RDS(on) | 5 | 8 | Ω | (ID = 10mA, VGS = 4V) | |
| 7 | 13 | Ω | (ID = 1mA, VGS = 2.5V) | |||
| Forward transfer admittance | |Yfs| | 20 | mS | (VDS = 3V, ID = 10mA) | ||
| Input Capacitance | Ciss | 13 | pF | (VDS = 5 V, VGS = 0, f = 1.0 MHz) | ||
| Output Capacitance | Coss | 9 | pF | (VDS = 5 V, VGS = 0, f = 1.0 MHz) | ||
| Reverse Transfer Capacitance | Crss | 4 | pF | (VDS = 5 V, VGS = 0, f = 1.0 MHz) | ||
| Turn-On Delay Time | td(on) | 15 | ns | (VDD =5 V, ID = 10mA,VGS=5V,RL = 500 Ω,RG = 10 Ω) | ||
| Rise Time | tr | 35 | ns | |||
| Turn-Off Delay Time | td(off) | 80 | ns | |||
| Fall Time | tf | 30 | ns | |||
| Device Marking and Ordering Information | ||||||
| Model | SC70(SOT-323) | |||||
| L2SK3018WT1G | KN | 3000/Tape&Reel | ||||
| S-L2SK3018WT1G | KN | 10000/Tape&Reel | ||||
| Device Code | KN | |||||
| Outline and Dimensions (Unit: mm) | ||||||
| Dimension | Symbol | MIN | MAX | |||
| A | A | 0.80 | 1.00 | mm | ||
| A1 | A1 | 0.00 | 0.10 | mm | ||
| A2 | A2 | 0.70 | 0.90 | mm | REF | |
| b | b | 0.30 | 0.40 | mm | ||
| c | c | 0.10 | 0.25 | mm | ||
| D | D | 1.80 | 2.20 | mm | ||
| E | E | 1.15 | 1.35 | mm | ||
| e | e | 1.20 | 1.40 | mm | ||
| e1 | e1 | 0.65 | BSC | mm | ||
| He | He | 1.90 | 2.10 | mm | ||
| L | L | 0.20 | 0.56 | mm | ||
1912111437_LRC-L2SK3018WT1G_C417317.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
