1200 volt trench field stop igbt device luxin-semi YGW40N120F2 with 40 amp continuous collector current rating
Key Attributes
Model Number:
YGW40N120F2
Product Custom Attributes
Td(off):
200ns
Pd - Power Dissipation:
417W
Td(on):
85ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
90pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@250uA
Gate Charge(Qg):
250nC@15V
Operating Temperature:
-40℃~+150℃
Reverse Recovery Time(trr):
190ns
Switching Energy(Eoff):
1.2mJ
Turn-On Energy (Eon):
4.3mJ
Input Capacitance(Cies):
6.4nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
180pF
Mfr. Part #:
YGW40N120F2
Package:
TO-247
Product Description
Product Overview
The YGW40N120F2 is a high-performance Trench Field Stop IGBT with a breakdown voltage of 1200V and a continuous collector current of 40A. It features high-speed switching, ruggedness, and easy parallel switching capability due to its positive temperature coefficient in VCEsat. This IGBT is designed for demanding applications such as Uninterruptible Power Supplies, Solar Inverters, Welding, and PFC applications.
Product Attributes
- Brand: LU-SEMI
- Product Code: YGW40N120F2
- Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 1200 | V | - |
| DC Collector Current | IC | 80 / 40 | A | TC = 25C / 100C |
| Diode Forward Current | IF | 80 / 40 | A | TC = 25C / 100C |
| Continuous Gate-Emitter Voltage | VGE | 20 | V | - |
| Pulsed Collector Current | ICM | 160 | A | VGE = 15V, tp limited by Tjmax |
| Short Circuit Withstand Time | Tsc | 10 | s | VGE= 15V, VCE 600V |
| Power Dissipation | Ptot | 417 | W | Tj=25C |
| Max. Junction Temperature | TJmax | 175 | C | Under switching conditions |
| Operating Junction Temperature | TJop | -40...+150 | C | - |
| Storage Temperature | Ts | -55...+150 | C | - |
| IGBT Thermal Resistance (junction-case) | R(j-c) | 0.3 | K/W | - |
| Diode Thermal Resistance (junction-case) | R(j-c) | 0.6 | K/W | - |
| Thermal Resistance (junction-ambient) | R(j-a) | 40 | K/W | - |
| Gate Threshold Voltage | VGE(th) | 5.2 / 5.9 / 6.5 | V | VGE=VCE, IC=250A |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.8 / 2.3 | V | VGE=15V, IC=40A, Tj = 25C / 150C |
| Zero Gate Voltage Collector Current | ICES | 250 / 2500 | A | VCE = 1200V, VGE = 0V, Tj = 25C / 150C |
| Gate-Emitter Leakage Current | IGES | 100 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 20 | S | VCE=20V, IC=15A |
| Input Capacitance | Cies | 6400 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Output Capacitance | Coes | 180 | pF | - |
| Reverse Transfer Capacitance | Cres | 90 | pF | - |
| Gate Charge | QG | 250 | nC | VCC = 960V, IC = 40A, VGE = 15V |
| Short Circuit Collector Current | ICSC | 350 | A | VGE=15V, tSC10us, VCC=600V, Tjstart=25C |
| Turn-on Delay Time | td(on) | 85 | ns | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=10, Tj = 25C |
| Rise Time | tr | 50 | ns | - |
| Turn-on Energy | Eon | 4.3 | mJ | - |
| Turn-off Delay Time | td(off) | 200 | ns | - |
| Fall Time | tf | 70 | ns | - |
| Turn-off Energy | Eoff | 1.2 | mJ | - |
| Diode Forward Voltage | VFM | 3.5 | V | IF = 40A, Tj = 25C |
| Reverse Recovery Time | Trr | 190 | ns | IF= 40A, VR = 600V, di/dt= 400A/s, Tj = 25C |
| Reverse Recovery Current | Irr | 6 | A | - |
| Reverse Recovery Charge | Qrr | 530 | nC | - |
2410121314_luxin-semi-YGW40N120F2_C4153679.pdf
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