High Voltage Transistors luJing MMBT5401 Pb Free SOT 23 Package Designed for Electronic Applications

Key Attributes
Model Number: MMBT5401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
600mA
Number:
1 PNP
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT5401
Package:
SOT-23
Product Description

Product Overview

High Voltage Transistors in Pb-Free Packages. These transistors are designed for high voltage applications and are available in Pb-Free packages.

Product Attributes

  • Case Style: SOT-23
  • Package: SOT-23
  • Shipping: Tape & Reel
  • Origin: China (implied by website)
  • Certifications: Pb-Free Packages Available

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-base breakdown voltageVCBOIC = -100 A, IE = 0-160V
Collector-emitter breakdown voltage *VCEOIC =- 1.0 mA, IB = 0-150V
Emitter-base breakdown voltageVEBOIE = -10 A, IC = 0-5V
Collector cutoff currentICBOVCB =- 120 V, IE = 0-0.1A
Emitter cutoff currentIEBOVEB = -4.0 V, IC = 0-0.1A
DC current gainhFEIC = -1.0 mA, VCE = -5 V80
IC = -10 mA, VCE = -5 V100300
IC = -50 mA, VCE = -5 V50
Collector-emitter saturation voltage *VCE(sat)IC = -50 mA, IB = -5.0 mA-0.5V
Base-emitter saturation voltage *VBE(sat)IC = -50 mA, IB = -5.0 mA-1.0V
Transiston frequencyfTVCE=-5V,IC=-10mA,f=30MHz100MHz

Ratings & Characteristics

ParameterSymbolRatingUnit
Collector-base voltageVCBO-160V
Collector-emitter voltageVCEO-150V
Emitter-base voltageVEBO-5V
Collector current-continuousIC-0.6A
Collector Power DissipationPc300mW
Junction and storage temperatureTJ, Tstg-55 to +150C

2507081835_luJing-MMBT5401_C49318128.pdf

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