Low on resistance 600V N channel Power MOSFET MagnaChip Semicon MMQ60R044RFTH designed for telecom equipment and EV chargers
Key Attributes
Model Number:
MMQ60R044RFTH
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
38mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 N-channel
Input Capacitance(Ciss):
6nF
Output Capacitance(Coss):
150pF
Pd - Power Dissipation:
378.8W
Gate Charge(Qg):
154nC@10V
Mfr. Part #:
MMQ60R044RFTH
Package:
TO-247
Product Description
Product Overview
The MMQ60R044RF is a 600V N-channel Power MOSFET utilizing Magnachip's advanced super junction technology. It offers very low on-resistance and gate charge, combined with an ultra-fast body diode for improved turn-off performance. This MOSFET delivers excellent efficiency and EMI characteristics, making it ideal for soft-switching applications such as server power supplies, telecom equipment, and EV charging systems.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Certifications: Halogen Free, RoHS Status: Halogen Free
- Package: TO-247
- Marking: 60R044RF
- Temp. Range: -55 ~ 150C
- Packing: Tube
Technical Specifications
| Parameter | Symbol | Rating | Unit | Note | Value | Test Condition |
| Drain Source voltage | VDSS | 600 | V | |||
| Gate Source voltage | VGSS | 30 | V | |||
| Continuous drain current | ID | 60 | A | ID limited by maximum junction temperature | TC=25 | |
| TC=100 | ||||||
| Pulsed drain current | IDM | 180 | A | Pulse width tP limited by Tj,max | ||
| Power dissipation | PD | 378.8 | W | |||
| Single - pulse avalanche energy | EAS | 2100 | mJ | IAS = 13.5A | ||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | |||
| Diode dv/dt ruggedness | dv/dt | 50 | V/ns | ISD ID, di/dt = 1000A/s, VDS peak V(BR)DSS, VDD= 400V, Tj=25oC | ||
| Storage temperature | Tstg | -55 ~150 | C | |||
| Maximum operating junction temperature | Tj | 150 | C | |||
| Thermal resistance, junction-case max | RthJC | 0.33 | C/W | |||
| Thermal resistance, junction-ambient max | RthJA | 42.1 | C/W | |||
| Drain Source Breakdown voltage | V(BR)DSS | 600 | V | VGS = 0V, ID = 1mA | Min. | |
| Gate Threshold Voltage | VGS(th) | 4 | V | VDS = VGS, ID = 250A | Typ. | |
| Zero Gate Voltage Drain Current | IDSS | 15 | A | VDS = 600V, VGS = 0V | Max. | |
| Gate Leakage Current | IGSS | 100 | nA | VGS = 30V, VDS =0V | Max. | |
| Drain-Source On State Resistance | RDS(ON) | 44.4 | m | VGS = 10V, ID = 30A | Max. | |
| Input Capacitance | Ciss | 6000 | pF | VDS = 400V, VGS = 0V, f = 400kHz | Typ. | |
| Output Capacitance | Coss | 150 | pF | Typ. | ||
| Reverse Transfer Capacitance | Crss | 18 | pF | Typ. | ||
| Effective Output Capacitance Energy Related | Co(er) | 241 | - | VDS = 0V to 480V, VGS = 0V, f = 400kHz | Typ. | |
| Turn On Delay Time | td(on) | 44.2 | ns | VGS = 10V, RG = 2, VDD = 300V, ID = 60A | Typ. | |
| Rise Time | tr | 199 | ns | Typ. | ||
| Turn Off Delay Time | td(off) | 112 | ns | Typ. | ||
| Fall Time | tf | 6.33 | ns | Typ. | ||
| Total Gate Charge | Qg | 154 | nC | VGS = 10V, VDD = 480V, ID = 60A | Typ. | |
| Gate Source Charge | Qgs | 50 | nC | Typ. | ||
| Gate Drain Charge | Qg | 64 | nC | Typ. | ||
| Gate Resistance | RG | 3.4 | VGS = 0V, f = 1MHz | Typ. | ||
| Continuous Diode Forward Current | ISD | 60 | A | Max. | ||
| Diode Forward Voltage | VSD | 1.4 | V | ISD = 60 A, VGS = 0V | Max. | |
| Reverse Recovery Time | trr | 230 | ns | ISD = 60 A di/dt =100A/s VDD = 100V | Typ. | |
| Reverse Recovery Charge | Qrr | 2.0 | C | Typ. | ||
| Reverse Recovery Current | Irrm | 19.6 | A | Typ. |
2509121533_MagnaChip-Semicon-MMQ60R044RFTH_C51891818.pdf
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