MOSFET MagnaChip Semicon MDQ20N116PTFTH designed for high temperature power electronics applications
Key Attributes
Model Number:
MDQ20N116PTFTH
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
95A
RDS(on):
10.4mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Input Capacitance(Ciss):
6.951nF
Pd - Power Dissipation:
300W
Output Capacitance(Coss):
428pF
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
MDQ20N116PTFTH
Package:
TO-247
Product Description
Product Overview
The Magnachip MDQ20N116PTFTH is a single N-channel Trench MOSFET designed for high-performance applications. Featuring Trench power MOSFET technology, it offers enhanced avalanche ruggedness and improved diode reverse recovery time for increased efficiency. This MOSFET is ideal for motor drive systems, battery-powered systems, and DC/DC and AC/DC converters, operating reliably up to a maximum junction temperature of 175C.
Product Attributes
- Brand: Magnachip Power Technology
- Model: MDQ20N116PTFTH
- Package: TO-247
- Certifications: Halogen Free, RoHS Status
- Ordering Code: MDQ20N116PTFTH
- Marking: MDQ20N116F
- Packing: Tube
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions / Note |
| MAXIMUM RATINGS | VDS | 200 | V | Drain-source Voltage |
| VGS | ±20 | V | Gate-source Voltage | |
| IDM | 380 | A | Pulsed drain current | |
| ID | 95 | A | Drain current | |
| Ptot | 300 | W | Total power dissipation | |
| EAS | 365 | mJ | Avalanche energy, single pulse | |
| Tj, Tstg | -55 ~ 175 | °C | Operating and storage temperature | |
| RΘJC | 0.5 | °C/W | Thermal resistance, junction - case | |
| RΘJA | 40 | °C/W | Thermal resistance, junction - ambient | |
| Tj max | 175 | °C | Maximum junction temperature | |
| ELECTRICAL CHARACTERISTICS | VGS(th) | 2.25 ~ 3.75 | V | VDS=VGS, ID=250 μA |
| RDS(on) | 10.4 ~ 11.6 | mΩ | VGS=10 V, ID=50 A | |
| V(BR)DSS | 200 | V | VGS=0 V, ID=250 μA | |
| IDSS | - ~ 10 | μA | VDS=200 V, VGS=0 V | |
| IGSS | - ~ ±100 | nA | VGS=±20 V, VDS=0 V | |
| Ciss | - ~ 6951 | pF | VGS=0 V, VDS=100 V, f=1 MHz | |
| Coss | - ~ 428 | pF | VGS=0 V, VDS=100 V, f=1 MHz | |
| Crss | - ~ 12 | pF | VGS=0 V, VDS=100 V, f=1 MHz | |
| Qg | - ~ 80 | nC | VDS=100 V, ID=50 A, VGS=0 to 10 V | |
| Qgs | - ~ 34 | nC | ||
| Qgd | - ~ 19 | nC | ||
| VSD | 0.86 ~ 1.20 | V | VGS=0 V, IF=50 A | |
| SOURCE-DRAIN DIODE | IS | 95 | A | Diode continous forward current |
| IS,pulse | - ~ 380 | A | Diode pulse current; tp ≤ 10 μs | |
| VSD | 0.86 ~ 1.20 | V | VGS=0 V, IF=50 A | |
| trr | - ~ 148 | ns | IF=50 A, diF/dt=100 A/μs | |
| Qrr | - ~ 785 | nC | IF=50 A, diF/dt=100 A/μs | |
| tr | - ~ 13 | ns | VDD=100 V, ID=50 A, VGS=10 V, RG,ext=3Ω | |
| DYNAMIC CHARACTERISTICS | td(on) | - ~ 30 | ns | VDD=100 V, ID=50 A, VGS=10 V, RG,ext=3Ω |
| td(off) | - ~ 64 | ns | VDD=100 V, ID=50 A, VGS=10 V, RG,ext=3Ω | |
| tf | - ~ 8 | ns | VDD=100 V, ID=50 A, VGS=10 V, RG,ext=3Ω | |
| Ciss | - ~ 6951 | pF | VGS=0 V, VDS=100 V, f=1 MHz | |
| Coss | - ~ 428 | pF | VGS=0 V, VDS=100 V, f=1 MHz | |
| Crss | - ~ 12 | pF | VGS=0 V, VDS=100 V, f=1 MHz | |
| GATE CHARGE CHARACTERISTICS | Qg | - ~ 80 | nC | VDS=100 V, ID=50 A, VGS=0 to 10 V |
| Qgs | - ~ 34 | nC | ||
| Qgd | - ~ 19 | nC |
2509121533_MagnaChip-Semicon-MDQ20N116PTFTH_C51902185.pdf
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