MOSFET MagnaChip Semicon MDU10N070RH designed for high current synchronous rectification applications
Key Attributes
Model Number:
MDU10N070RH
Product Custom Attributes
Mfr. Part #:
MDU10N070RH
Package:
PDFN56
Product Description
Product Overview
The MDU10N070RH is a single N-Channel Trench MOSFET from Magnachip Semiconductor, utilizing advanced MOSFET Technology for high performance in on-state resistance and fast switching. It is suitable for synchronous rectification in server and general-purpose applications.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Model: MDU10N070RH
- Technology: Trench MOSFET
- RoHS Status: Halogen Free
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings (Ta = 25oC) | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Gate-Source Voltage | VGSS | ±20 | V | |||
| Continuous Drain Current (Silicon Limited) | ID | TC=25oC | 85 | A | ||
| Continuous Drain Current (Package Limited) | ID | TC=25oC | 53 | A | ||
| Continuous Drain Current (Silicon Limited) | ID | TC=100oC | 54 | A | ||
| Continuous Drain Current | ID | TA=25oC | 19 | A | ||
| Pulsed Drain Current | IDM | (2) | 212 | A | ||
| Power Dissipation | PD | TC=25oC | 119 | W | ||
| Power Dissipation | PD | TC=100oC | 47 | W | ||
| Power Dissipation | PD | TA=25oC ( T ≤ 10s ) | 5.5 | W | ||
| Single Pulse Avalanche Energy | EAS | (3) | 84 | mJ | ||
| Junction and Storage Temperature Range | TJ, Tstg | -55~150 | oC | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RθJA | ( T ≤ 10s ) (1) | 22.7 | oC/W | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | ( Steady State ) (1) | 50.0 | oC/W | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.05 | oC/W | |||
| Electrical Characteristics (TJ =25oC) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250µA, VGS = 0V | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1.2 | - | 2.2 | V |
| Drain Cut-Off Current | IDSS | VDS = 100V, VGS = 0V | - | - | 1.0 | uA |
| Gate Leakage Current | IGSS | VGS = ±20V, VDS = 0V | - | - | ±100 | nA |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 5.9 | 7.4 | mΩ |
| Drain-Source ON Resistance | RDS(ON) | VGS = 4.5V, ID = 15A | - | 7.0 | 9.1 | mΩ |
| Forward Transconductance | gfs | VDS = 10V, ID = 20A | - | 92 | - | S |
| Dynamic Characteristics | ||||||
| Total Gate Charge | Qg(10V) | VDD = 50V, ID = 20A, VGS = 10V | - | 63 | - | nC |
| Gate-Source Charge | Qgs | - | 10 | - | ||
| Gate-Drain Charge | Qg d | - | 10 | - | ||
| Input Capacitance | Ciss | VDS = 40V, VGS = 0V, f = 1.0MHz | - | 4140 | - | pF |
| Reverse Transfer Capacitance | Crss | - | 31 | - | ||
| Output Capacitance | Coss | - | 586 | - | ||
| Turn-On Delay Time | td(on) | VGS = 10V, VDD = 50V, ID = 20A, RG =3Ω, | - | 13.5 | - | ns |
| Rise Time | tr | - | 12 | - | ||
| Turn-Off Delay Time | td(off) | - | 61 | - | ||
| Fall Time | tf | - | 8.8 | - | ||
| Gate Resistance | Rg | f=1.0 MHz | - | 3.0 | - | Ω |
| Drain-Source Body Diode Characteristics | ||||||
| Diode continuous forward current | IS | TC=25oC (Package Limited) | - | - | 53 | A |
| Source-Drain Diode Forward Voltage | VSD | IS = 20A, VGS = 0V | - | 0.8 | 1.2 | V |
| Body Diode Reverse Recovery Time | trr | IF = 20A, dl/dt = 100A/µs | - | 70 | - | ns |
| Body Diode Reverse Recovery Charge | Qrr | - | 183 | - | nC | |
2509121533_MagnaChip-Semicon-MDU10N070RH_C42753906.pdf
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